Philips BFT25A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFT25A
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
December 1997
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
FEATURES
• Low current consumption
(100 µA − 1 mA)
• Low noise figure
• Gold metallization ensures
excellent reliability.
PINNING
PIN DESCRIPTION
Code: V10
1 base
2 emitter
page
3
3 collector
DESCRIPTION
The BFT25A is a silicon npn
transistor, primarily intended for use
in RF low power amplifiers, such as
12
Top view
MSB003
pocket telephones and paging
systems with signal frequencies up to
2 GHz.
The transistor is encapsulated in a
Fig.1 SOT23.
3-pin plastic SOT23 envelope.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
collector-base voltage open emitter −−8V
collector-emitter voltage open base −−5V
DC collector current −−6.5 mA
total power dissipation up to Ts = 165 °C;
−−32 mW
note 1
h
FE
f
T
G
UM
F noise figure Γ = Γ
DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200
transition frequency IC = 1 mA; VCE = 1 V;
=25°C; f = 500 MHz
T
amb
maximum unilateral power
gain
IC = 0.5 mA; VCE = 1 V;
T
= 25 °C; f = 1 GHz
amb
= 0.5 mA; VCE= 1 V;
opt;IC
T
=25°C; f = 1 GHz
amb
Γ = Γ
T
amb
= 1 mA; VCE= 1 V;
opt;IC
=25°C; f = 1 GHz
3.5 5 − GHz
− 15 − dB
− 1.8 − dB
− 2 − dB
Note
1. T
is the temperature at the soldering point of the collector tab.
s
December 1997 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-s
collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
emitter-base voltage open collector − 2V
DC collector current − 6.5 mA
total power dissipation up to Ts= 165 °C;
− 32 mW
note 1
storage temperature −65 150 °C
junction temperature − 175 °C
from junction to soldering point (note 1) 260 K/W
Note
1. T
is the temperature at the soldering point of the collector tab.
s
CHARACTERISTICS
= 25 °C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
f
T
C
re
G
UM
F noise figure Γ = Γ
collector cut-off current IE = 0; VCB = 5 V −−50 nA
DC current gain IC= 0.5 mA; VCE = 1 V 50 80 200
transition frequency IC = 1 mA; VCE = 1 V;
T
= 25 °C; f = 500 MHz
amb
3.5 5 − GHz
feedback capacitance IC=ic= 0; VCB= 1 V; f = 1 MHz − 0.3 0.45 pF
maximum unilateral power
gain (note 1)
IC = 0.5 mA; VCE = 1 V;
T
= 25 °C; f = 1 GHz
amb
= 0.5 mA; VCE= 1 V;
opt;IC
T
=25°C; f = 1 GHz
amb
Γ = Γ
T
amb
= 1 mA; VCE= 1 V;
opt;IC
=25°C; f = 1 GHz
− 15 − dB
− 1.8 − dB
− 2 − dB
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
G
UM
--------------------------------------------------------------
10
1S
–
2
S
21
2
–
1S
11
22
dB.log=
2
December 1997 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFT25A
40
handbook, halfpage
P
tot
(mW)
30
20
10
0
0 50 100 200
150
Fig.2 Power derating curve.
MBG247
Ts (oC)
110
MCD138
I (mA)
C
100
handbook, halfpage
h
FE
80
60
40
20
0
3
10
VCE= 1 V.
2
10
1
Fig.3 DC current gain as a function of collector
current.
10
0.4
handbook, halfpage
C
re
(pF)
0.3
0.2
0.1
0
0
Ic = ic= 0; f = 1 MHz.
1234
MCD103
5
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage.
December 1997 4
6
handbook, halfpage
f
T
(GHz)
4
2
0
0
VCE= 1 V; T
12 4
=25°C; f = 500 MHz.
amb
3
Fig.5 Transition frequency as a function of
collector current.
MCD140
I (mA)
C
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