Philips bft25a Datasheet

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BFT25A

NPN 5 GHz wideband transistor

Rev. 04 — 6 July 2004 Product data sheet

1. Product proﬁle

1.1 General description

The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power ampliﬁers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz.

The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

1.2 Features

■ Low current consumption (100 µA to 1 mA)

■ Low noise ﬁgure

■ Gold metallization ensures excellent reliability.

1.3 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CBO

CEO

tot

F noise ﬁgure Γ = Γ

[1] Ts is the temperature at the soldering point of the collector tab.

collector-base voltage

collector-emitter voltage

DC collector current

total power dissipation

DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 transition

frequency

maximum unilateral power gain

open emitter - - 8 V

open base - - 5 V

- - 6.5 mA

up to Ts = 165 °C

IC = 1 mA; VCE = 1 V; T

=25°C;

amb

f = 500 MHz IC = 0.5 mA; VCE = 1 V;

= 25 °C;

amb

f = 1 GHz

; IC= 0.5 mA;

opt

= 1 V;

=25°C; f = 1 GHz

amb

Γ = Γ V T

; IC= 1 mA;

opt

= 1 V;

=25°C; f = 1 GHz

amb

[1]

--32mW

3.5 5 - GHz

-15-dB

- 1.8 - dB

-2-dB

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Philips Semiconductors

2. Pinning information

Table 2: Discrete pinning

Pin Description Simpliﬁed outline Symbol

Code: V10

1 base 2 emitter 3 collector

3. Ordering information

Table 3: Ordering information

Type number Package

BFT25A - plastic surface mounted package; 3 leads SOT23

BFT25A

NPN 5 GHz wideband transistor

SOT23

Name Description Version

sym021

4. Marking

Table 4: Marking

Type number Marking code

BFT25A 34*

[1] * = p : Made in Hong Kong.

* = t : Made in Malaysia. * = W : Made in China.

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

[1] Ts is the temperature at the soldering point of the collector tab.

[1]

collector-base voltage open emitter - 8 V collector-emitter voltage open base - 5 V emitter-base voltage open collector - 2 V DC collector current - 6.5 mA total power dissipation up to Ts= 165 °C

[1]

-32mW storage temperature −65 +150 °C junction temperature - 175 °C

Product data sheet Rev. 04 — 6 July 2004 2 of 14

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Philips Semiconductors

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-s)

[1] Ts is the temperature at the soldering point of the collector tab.

from junction to soldering point

7. Characteristics

Table 7: Characteristics

Tj = 25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

CBO

F noise ﬁgure Γ = Γ

[1] GUM is the maximum unilateral power gain, assuming S12 is zero and

collector cut-off current

DC current gain IC= 0.5 mA; VCE = 1 V 50 80 200 transition

frequency

feedback capacitance

maximum unilateral power gain

10 log

IE = 0 A; VCB = 5 V - - 50 nA

IC = 1 mA; VCE = 1 V; T

= 25 °C;

amb

f = 500 MHz IC=ic= 0 A; VCB=1V;

f = 1 MHz IC= 0.5 mA; VCE=1V;

=25°C; f = 1 GHz

amb

opt

= 1 V;

=25°C; f = 1 GHz

amb

Γ = Γ

opt

= 1 V;

=25°C; f = 1 GHz

amb

------------------------------------------------------

–()1S

–()

; IC= 0.5 mA;

; IC= 1 mA;

dB=

BFT25A

NPN 5 GHz wideband transistor

[1]

260 K/W

3.5 5 - GHz

- 0.3 0.45 pF

[1]

-15-dB

- 1.8 - dB

-2-dB

Product data sheet Rev. 04 — 6 July 2004 3 of 14

Page 4

Philips Semiconductors

BFT25A

NPN 5 GHz wideband transistor

tot

(mW)

0 50 100 200

150

mbg247

(°C)

100

−3

−2

−1

mcd138

IC (mA)

VCE=1 V.

Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector

current.

(pF)

0.4

0.3

mcd103

(GHz)

mcd140

0.2

0.1

1234

VCB (V)

IC = ic= 0 A; f = 1 MHz. VCE= 1 V; T

Fig 3. Feedback capacitance as a function of

collector-base voltage.

Fig 4. Transition frequency as a function of collector

current.

12 4

=25°C; f = 500 MHz.

amb

(mA)

Figure 5, 6, 7 and 8,GUM= maximum unilateral power gain; MSG = maximum stable gain.

Product data sheet Rev. 04 — 6 July 2004 4 of 14

Page 5

Philips Semiconductors

BFT25A

NPN 5 GHz wideband transistor

gain (dB)

0 0.5 1.0 2.0

MSG

1.5

mcd104

IC (mA)

gain (dB)

0 0.5 1.0 2.0

MSG

1.5

mcd105

IC (mA)

VCE= 1 V; f = 500 MHz. VCE= 1 V; f = 1 GHz.

Fig 5. Gain as a function of collector current. Fig 6. Gain as a function of collector current.

gain (dB)

mcd106

gain (dB)

mcd107

10 10

MSG

max

f (MHz)

10 10

MSG

VCE= 1 V; IC = 0.5 mA. VCE= 1 V; IC = 1 mA.

Fig 7. Gain as a function of frequency. Fig 8. Gain as a function of frequency.

f (MHz)

max

Product data sheet Rev. 04 — 6 July 2004 5 of 14

Page 6

Philips Semiconductors

BFT25A

NPN 5 GHz wideband transistor

mcd145

(mA)

(dB)

f =

−1

2 GHz

1 GHz 500 MHz

110

VCE=1 V. VCE=1 V.

Fig 9. Minimum noise ﬁgure as a function of collector

current.

0.5

mcd146

f (MHz)

(dB)

IC =

2 mA

1 mA

0.5 mA

Fig 10. Minimum noise ﬁgure as a function of

frequency.

0.2

−j

0.2

See Table 8; Zo=50Ω. Average gain parameter: MSG = 14.5 dB.

Fig 11. Noise circle ﬁgure.

0.5

pot. unst. region

0.50.2 2

MSG

14.5 dB

13 dB

11 dB

6 dB

4 dB

2.5 dB

stability circle

∞

opt

= 1.9 dB

min

mcd108

Product data sheet Rev. 04 — 6 July 2004 6 of 14

Page 7

Philips Semiconductors

Table 8: Noise parameters

f (MHz) VCE (V) IC (mA) F

500 1 1 1.9 0.79 4 2.5

(dB) Γ

min

BFT25A

NPN 5 GHz wideband transistor

opt

(mag) (ang)

Rn/50

0.2

−j

0.2

See Table 9; Zo=50Ω. Average gain parameter: MSG = 11.2 dB.

Fig 12. Noise circle ﬁgure.

0.5

pot. unst. region

0.50.2 2

MSG

11.2 dB

10 dB

8 dB

4 dB

3 dB

stability circle

∞

opt

= 2 dB

min

mcd109

Table 9: Noise parameters

f (MHz) VCE (V) IC (mA) F

(dB) Γ

min

opt

Rn/50

(mag) (ang)

1000 1 1 2 0.74 8 2.6

Product data sheet Rev. 04 — 6 July 2004 7 of 14

Page 8

Philips Semiconductors

BFT25A

NPN 5 GHz wideband transistor

0.2

−j

0.2

See Table 10; Zo=50Ω. Average gain parameter: MSG = 7.7 dB.

Fig 13. Noise circle ﬁgure.

pot. unst. region

0.5

MSG

7.7 dB

7 dB

0.50.2 2

5 dB

6 dB

stability circle

min

3 dB

4 dB

opt

= 2.4 dB

∞

mcd110

Table 10: Noise parameters

f (MHz) VCE (V) IC (mA) F

(dB) Γ

min

opt

Rn/50

(mag) (ang)

2000 1 1 2.4 0.72 26 1.7

Product data sheet Rev. 04 — 6 July 2004 8 of 14

Page 9

Philips Semiconductors

BFT25A

NPN 5 GHz wideband transistor

0.5

0.2

−j

0.2

0.5

0.50.2 2

3 GHz

VCE= 1 V; IC= 1 mA. Zo = 50 Ω.

Fig 14. Common emitter input reﬂection coefﬁcient (S11).

40 MHz

∞

mcd111

90°

180°

40 MHz

5 4 3 2 1

3 GHz

−90°

VCE= 1 V; IC= 1 mA.

Fig 15. Common emitter forward transmission coefﬁcient (S21).

45°135°

0°

−45°−135°

mcd112

Product data sheet Rev. 04 — 6 July 2004 9 of 14

Page 10

Philips Semiconductors

BFT25A

NPN 5 GHz wideband transistor

90°

45°135°

3 GHz

180°

0.5 0.4 0.3 0.2 0.1

40 MHz

−90°

VCE= 1 V; IC= 1 mA.

Fig 16. Common emitter reverse transmission coefﬁcient (S12).

0.5

0.2

−j

0.50.2 2

−45°−135°

40 MHz

0°

mcd114

∞

0.2

0.5

3 GHz

mcd113

VCE= 1 V; IC= 1 mA. Zo = 50 Ω.

Fig 17. Common emitter output reﬂection coefﬁcient (S22).

Product data sheet Rev. 04 — 6 July 2004 10 of 14

Page 11

Philips Semiconductors

BFT25A

NPN 5 GHz wideband transistor

8. Package outline

Plastic surface mounted package; 3 leads SOT23

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

1.1

0.9

max.

0.48

0.1

0.38

0.15

0.09

IEC JEDEC EIAJ

3.0

2.8

1.4

1.2

REFERENCES

1.9

e1H

0.95

2.5

2.1

Qwv

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28 99-09-13

UNIT

OUTLINE VERSION

SOT23 TO-236AB

Fig 18. Package outline.

Product data sheet Rev. 04 — 6 July 2004 11 of 14

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Philips Semiconductors

NPN 5 GHz wideband transistor

BFT25A

9. Revision history

Table 11: Revision history

Document ID Release date Data sheet status Change notice Order number Supersedes

BFT25A_4 20040706 product data sheet - 9397750 13399 BFT25A_CNV_3 Modiﬁcations:

BFT25A_CNV_3 19971205 product speciﬁcation - - -

• Converted from Lotus Manuscript format to TDM format.

• Marking code added.

Product data sheet Rev. 04 — 6 July 2004 12 of 14

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Philips Semiconductors

10. Data sheet status

BFT25A

NPN 5 GHz wideband transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheetcontains data from thepreliminary speciﬁcation.Supplementary datawill be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitablefor the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date.Philips Semiconductors reserves the right to change thespeciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at anytime in order to improve the design, manufacturingand supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

12. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes norepresentations or warrantiesthat these productsare free frompatent, copyright, or maskwork right infringement, unless otherwise speciﬁed.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 04 — 6 July 2004 13 of 14

Page 14

Philips Semiconductors

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . . 3

7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Contact information . . . . . . . . . . . . . . . . . . . . . 13

BFT25A

NPN 5 GHz wideband transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Document order number: 9397 750 13399

Published in The Netherlands

Date of release: 6 July 2004