Philips BFT25 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFT25

NPN 2 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

November 1992

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFT25

DESCRIPTION

NPN transistor in a plastic SOT23
envelope.

It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current

PINNING

PIN DESCRIPTION

Code: V1p
1 base
2 emitter
3 collector

page

3

consumption (100µA to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.

12

Top view

MSB003

Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CBO

V

CEO

I

c

P

tot

f

T

C

re

G

UM

F noise figure I

collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
DC collector current − 6.5 mA
total power dissipation up to Ts= 167 °C; note 1 − 30 mW
transition frequency IC= 1 mA; VCE= 1 V; f = 500 MHz;

T

=25°C

amb

feedback capacitance IC= 1 mA; VCE= 1 V; f = 1 MHz;

=25°C

T

amb

maximum unilateral power gain IC= 1 mA; VCE= 1 V; f = 500 MHz;

T

=25°C

amb

= 1 mA; VCE= 1 V; f = 500 MHz;

C

T

=25°C

amb

2.3 − GHz

− 0.45 pF

18 − dB

3.8 − dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

T

stg

T

j

collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
emitter-base voltage open collector − 2V
DC collector current − 6.5 mA
peak collector current f > 1 MHz − 10 mA
total power dissipation up to Ts= 167 °C; note 1 − 30 mW
storage temperature −65 150 °C
junction temperature − 175 °C

Note

is the temperature at the soldering point of the collector tab.

1. T

s

November 1992 2

Philips Semiconductors Product specification

NPN 2 GHz wideband transistor BFT25

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

thermal resistance from junction to
soldering point

Note

= is the temperature at the soldering point of the collector tab.

1. T

s

CHARACTERISTICS

= 25 °C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

c

C

e

C

re

G

UM

F noise figure I

collector cut-off current IE = 0; VCB = 5 V −−50 nA
DC current gain IC = 10 µA; VCE = 1 V 20 30 −

I

= 1 mA; VCE = 1 V 20 40 −

C

transition frequency IC= 1 mA; VCE= 1 V; f = 500 MHz 1.2 2.3 − GHz
collector capacitance IE=ie= 0; VCB= 0.5 V; f = 1 MHz −− 0.6 pF
emitter capacitance Ic=ic=0;VEB = 0; f = 1 MHz −−0.5 pF
feedback capacitance IC= 1 mA; VCE= 1 V; f = 1 MHz;

T

amb

maximum unilateral power gain
(note 1)

IC= 1 mA; VCE= 1 V; f = 500 MHz;
T

amb

I

= 1 mA; VCE= 1 V; f = 800 MHz;

C

T

amb

= 0.1 mA; VCE=1V;

C

f = 500 MHz; T
I

= 1 mA; VCE= 1 V; f = 500 MHz;

C

T

amb

up to Ts= 167°C; note 1 260 K/W

−− 0.45 pF

=25°C

− 18 − dB

=25°C

− 12 − dB

=25°C

− 5.5 − dB

=25°C

amb

− 3.8 − dB

=25°C

Note

1. G

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

--------------------------------------------------------------

10 log



1S

–



2

S

21

2



1S

–



11

22

dB.=

2

November 1992 3