Philips bfs520_cnv Datasheet

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Page 1

DATA SH EET

DISCRETE SEMICONDUCTORS

BFS520

NPN 9 GHz wideband transistor

Product specification September 1995

Page 2

NXP Semiconductors Product specification

Fig.1 SOT323.

handbook, 2 columns

MBC870

Top view

NPN 9 GHz wideband transistor BFS520

FEATURES

 High power gain  Low noise figure  High transition frequency

It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.

 Gold metallization ensures

excellent reliability

 SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323 envelope.

PINNING

PIN DESCRIPTION

Code: N2 1 base 2emitter 3 collector

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CBO

CES

tot

F noise figure I

collector-base voltage open emitter 20 V collector-emitter voltage RBE=0 15 V DC collector current 70 mA total power dissipation up to Ts=118 C; note 1 300 mW DC current gain IC=20 mA; VCE=6 V; Tj= 25 C60120250 transition frequency IC=20 mA; VCE=6 V; f=1 GHz;

=25 C

amb

maximum unilateral power gain Ic=20 mA; VCE= 6 V; f = 900 MHz;

=25 C

amb

=5 mA; VCE= 6 V; f = 900 MHz;

=25 C

amb

 9  GHz

 15  dB

 1.1 1.6 dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134) .

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

CBO

CES

EBO

tot

stg

Note

1. T

September 1995 2

collector-base voltage open emitter  20 V collector-emitter voltage RBE=0  15 V emitter-base voltage open collector  2.5 V DC collector current  70 mA total power dissipation up to Ts=118 C; note 1  300 mW storage temperature 65 150 C junction temperature  175 C

is the temperature at the soldering point of the collector tab.

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NXP Semiconductors Product specification

10 log

–1S

–

----------------------------------------------------------

dB.=

NPN 9 GHz wideband transistor BFS520

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

th j-s

Note

is the temperature at the soldering point of the collector tab.

1. T

CHARACTERISTICS

=25 C, unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CBO



S

F noise figure 

ITO third order intercept point note 2  26  dBm

thermal resistance from junction to

up to Ts=118 C; note 1 190 K/W

soldering point

collector cut-off current IE=0; VCE=6 V 50 nA DC current gain IC= 20mA; VCE=6 V 60 120 250 emitter capacitance IC=ic=0; VEB= 0.5 V; f = 1 MHz  1  pF collector capacitance IE=ie=0; VCB=6 V; f=1 MHz  0.5  pF feedback capacitance IC=0; VCB=6 V; f=1 MHz  0.4  pF transition frequency IC=20 mA; VCE=6 V; f=1 GHz;

=25 C

amb

maximum unilateral power gain (note 1)

IC=20 mA; VCE= 6 V; f = 900 MHz;

=25 C

amb

=20 mA; VCE=6 V; f=2 GHz;

=25 C

amb

insertion power gain IC=20 mA; VCE= 6 V; f = 900 MHz;

=25 C

amb

output power at 1 dB gain compression

= 

f = 900 MHz; T



= 

f = 900 MHz; T

= 



f=2 GHz; T Ic=20 mA; VCE=6 V; RL=50 ;

f = 900 MHz; T

= 5 mA; VCE=6 V;

opt;IC

=25 C

amb

=20 mA; VCE=6 V;

opt;IC

=25 C

amb

= 5 mA; VCE=6 V;

opt;IC

=25 C

amb

=25 C

amb

 9  GHz

 15  dB

 9  dB

13 14  dB

 1.1 1.6 dB

 1.6 2.1 dB

 1.9  dB

 17  dBm

Notes

1. G

2. I

is the maximum unilateral power gain, assuming S12is zero and

=20 mA; VCE=6 V; RL=50 ; f =900 MHz; T

=900 MHz; fq= 902 MHz; measured at f

(2pq)

= 25 C;

amb

= 898 MHz and at f

(2qp)

=904 MHz.

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NXP Semiconductors Product specification

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

400

300

100

200

MRC030 - 1

150

tot

(mW)

Ts(

Fig.3 DC current gain as a function of collector

current.

VCE=6 V; Tj=25 C.

handbook, halfpage

MRC028

100

150

200

−1

−2

11010

IC(mA)

Fig.4 Feedback capacitance as a function of

collector-base voltage.

IC=0; f=1 MHz.

handbook, halfpage

MRC021

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0246810

V (V)

(pF)

Fig.5 Transition frequency as a function of

collector current.

f = 1 GHz; T

amb

=25 C.

handbook, halfpage

MRC022

1 10 100

(GHz)

IC(mA)

3 V

= 8 V

NPN 9 GHz wideband transistor BFS520

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NXP Semiconductors Product specification

Fig.6 Maximum unilateral power gain as a

function of collector current.

VCE= 6 V; f = 900 MHz; T

amb

=25 C.

handbook, halfpage

MRC027

0102030

(dB)

IC(mA)

3 V

= 6 V

Fig.7 Gain as a function of collector current.

VCE= 6 V; f = 2 GHz; T

amb

=25 C.

handbook, halfpage

MRC026

0 102030

MSG

max

gain (dB)

IC(mA)

Fig.8 Gain as a function of frequency.

IC= 5 mA; VCE=6 V; T

amb

=25 C.

handbook, halfpage

MRC024

−1

−2

110

f (GHz)

MSG

max

gain (dB)

Fig.9 Gain as a function of frequency.

IC=20 mA; VCE=6 V; T

amb

=25 C.

handbook, halfpage

MRC025

−1

−2

110

f (GHz)

MSG

max

gain

(dB)

NPN 9 GHz wideband transistor BFS520

In Figs 6 to 9, GUM= maximum unilateral power gain; MSG = maximum stable gain; G gain.

= maximum available

max

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NXP Semiconductors Product specification

Fig.10 Minimum noise figure as a function of

collector current.

VCE=6 V; T

amb

=25 C.

handbook, halfpage

MRC029

11010

IC(mA)

(dB)

900 MHz

500 MHz

f = 2 GHz

Fig.11 Minimum noise figure as a function of

frequency.

VCE=6 V; T

amb

=25 C.

handbook, halfpage

MRC023

−1

110

(dB)

5 mA

I = 20 mA

f (GHz)

NPN 9 GHz wideband transistor BFS520

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NXP Semiconductors Product specification

Fig.12 Noise circle.

IC= 5 mA; VCE=6 V; f = 900 MHz; Z

=50 .

handbook, full pagewidth

MRC077

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

stability circle

pot. unst. region

F = 3 dB

F = 2 dB

F = 1.5 dB

OPT

min

= 1. 1 dB

Fig.13 Noise circle.

IC= 5 mA; VCE=6 V; f = 2 GHz; Z

= 50 .

handbook, full pagewidth

MRC078

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

max

= 9.1 dB

G = 7 dB

G = 8 dB

G = 8,5 dB

OPT

min

= 1. 9 dB

F = 3 dB

F = 2.5 dB

F = 2 dB

NPN 9 GHz wideband transistor BFS520

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NXP Semiconductors Product specification

Fig.14 Common emitter input reflection coefficient (S11).

IC=20 mA; VCE=6 V; Z

=50 .

handbook, full pagewidth

MRC066

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

3 GHz

40 MHz

Fig.15 Common emitter forward transmission coefficient (S21).

IC=20 mA; VCE=6 V.

handbook, full pagewidth

MRC067

50 40 30 20 10

180°

−135°

−90°

−45°

0°

45°

90°

135°

3 GHz

40 MHz

NPN 9 GHz wideband transistor BFS520

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NXP Semiconductors Product specification

Fig.16 Common emitter reverse transmission coefficient (S12).

IC=20 mA; VCE=6 V.

handbook, full pagewidth

MRC060

0.5 0.4 0.3 0.2 0.1

180°

−90°

−135°

−45°

0°

45°

90°

135°

3 GHz

40 MHz

handbook, full pagewidth

MRC061

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

3 GHz

40 MHz

Fig.17 Common emitter output reflection coefficient (S22).

IC=20 mA; VCE=6 V; Z

= 50 .

NPN 9 GHz wideband transistor BFS520

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NXP Semiconductors Product specification

UNIT

max

e1H

Qwv

REFERENCES

OUTLINE VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC JEITA

0.1

1.1

0.8

0.4

0.3

0.25

0.10

2.2

1.8

1.35

1.15

0.65

1.3

2.2

2.0

0.23

0.13

0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

w M

detail X

v M

0 1 2 mm

scale

Plastic surface-mounted package; 3 leads SOT323

04-11-04 06-03-16

NPN 9 GHz wideband transistor BFS520

PACKAGE OUTLINE

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NXP Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

DEFINITIONS Product specification  The information and data

provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

DISCLAIMERS Limited warranty and liability  Information in this

document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

(1)

PRODUCT STATUS

(2)

DEFINITION

development.

Right to make changes  NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication he reof.

Suitability for use  NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications wher e failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inc l usion and/or use is at the customer’s own risk.

Applications  Applications that ar e described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the ris ks associated with their applications and products.

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NXP Semiconductors Product specification

NPN 9 GHz wideband transistor BFS520

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applicat ions and products using NXP Semiconductors products in or de r to avoid a default of the applications and the prod ucts or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Limiting values  Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Rec ommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale  NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In cas e an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

Export control  This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data  The Quick reference data is an extract of the product data given in t he Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with auto motive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from cus tom er d esign and use o f the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

No offer to sell or license  Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights .

September 1995 12

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NXP Semiconductors

provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected]

The information presented in this document does not form part of any quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re liable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R77/03/pp13 Date of release: September 1995