Philips BFS25A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFS25A
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
December 1997
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
FEATURES
• Low current consumption
• Low noise figure
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
PINNING
PIN DESCRIPTION
Code: N6
1 base
2 emitter
3 collector
handbook, 2 columns
3
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
12
Top view
MBC870
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
Fig.1 SOT323.
2 GHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F noise figure I
collector-base voltage open emitter −−8V
collector-emitter voltage open base −−5V
DC collector current −−6.5 mA
total power dissipation up to Ts= 170 °C; note 1 −−32 mW
DC current gain IC= 0.5 mA; VCE= 1 V; Tj=25°C 50 80 200
transition frequency IC= 1 mA; VCE= 1 V; f = 1 GHz;
T
=25°C
amb
maximum unilateral power gain Ic= 0.5 mA; VCE= 1 V; f = 1 GHz;
T
=25°C
amb
= 0.5 mA; VCE= 1 V; f = 1 GHz;
c
T
=25°C
amb
3.5 5 − GHz
− 13 − dB
− 1.8 − dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
emitter-base voltage open collector − 2V
DC collector current − 6.5 mA
total power dissipation up to Ts= 170 °C; note 1 − 32 mW
storage temperature −65 150 °C
junction temperature − 175 °C
Note
1. T
is the temperature at the soldering point of the collector tab.
s
December 1997 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
=25°C, unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
re
f
T
G
UM
F noise figure Γ
collector cut-off current IE= 0; VCB=5 V −−50 nA
DC current gain IC= 0.5 mA; VCE= 1 V 50 80 200
feedback capacitance IC= 0; VCB= 1 V; f = 1 MHz − 0.3 0.45 pF
transition frequency IC= 1 mA; VCE= 1 V; f = 1 GHz;
T
amb
maximum unilateral power gain
(note 1)
IC= 0.5 mA; VCE= 1 V; f = 1 GHz;
T
amb
s
f = 1 GHz; T
Γ
s
f = 1 GHz; T
up to Ts= 170 °C; note 1 190 K/W
3.5 5 − GHz
=25°C
− 13 − dB
=25°C
= Γ
= Γ
= 0.5 mA; VCE=1 V;
opt;IC
=25°C
amb
= 1 mA; VCE=1 V;
opt;IC
=25°C
amb
− 1.8 − dB
− 2 − dB
Note
1. G
is the maximum unilateral power gain, assuming S12is zero and
UM
G
UM
--------------------------------------------------------------
10 log
1S
–
2
S
21
2
1S
–
11
22
dB.=
2
December 1997 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFS25A
40
handbook, halfpage
P
tot
(mW)
30
20
10
0
0 50 100 200
150
Ts (oC)
Fig.2 Power derating curve.
MRC038 - 1
100
handbook, halfpage
h
FE
80
60
40
20
0
−3
10
VCE= 1 V; Tj=25°C.
−2
10
−1
10
MRC037
110
I
(mA)
C
Fig.3 DC current gain as a function of collector
current.
0.5
handbook, halfpage
C
re
(pF)
0.4
0.3
0.2
0.1
0
012345
IC= 0; f= 1 MHz.
V (V)
CB
Fig.4 Feedback capacitance as a function of
collector-base voltage.
MRC031
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
0 0.5 1 1.5 2 2.5
f = 1 GHz; T
amb
=25°C.
V
CE
Fig.5 Transition frequency as a function of
collector current.
MRC032
= 3 V
1 V
IC(mA)
December 1997 4
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