Philips BFS20W Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
BFS20W
NPN medium frequency transistor
Product specification
1999 Apr 21
Philips Semiconductors Product specification
NPN medium frequency transistor BFS20W
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 20 V).
• Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
• IF and VHF applications in thick and thin-film circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT323 (SC-70)
plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
BFS20W N1∗
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323; SC-70) and
symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 4V
collector current (DC) − 25 mA
peak collector current − 25 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
1999 Apr 21 2
Philips Semiconductors Product specification
NPN medium frequency transistor BFS20W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
BE
C
c
C
re
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB=20V −−100 nA
I
= 0; VCB= 20 V; Tj= 100 °C −−10 µA
E
emitter cut-off current IC= 0; VEB=4V −−100 nA
DC current gain IC= 7 mA; VCE= 10 V 40 85 −
base-emitter voltage IC= 7 mA; VCE=10V − 740 900 mV
collector capacitance IE=ie= 0; VCB=10V; f=1MHz − 1 − pF
feedback capacitance IC= 0; VCE= 10 V; f = 1 MHz − 350 − fF
transition frequency IC= 5 mA; VCE= 10 V; f = 100 MHz 360 470 − MHz
1999 Apr 21 3
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