Philips BFS19 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BFS19
NPN medium frequency transistor
Product specification
Supersedes data of 1997 Jul 02
1999 Apr 15
Philips Semiconductors Product specification
NPN medium frequency transistor BFS19
FEATURES
• Low current (max. 30 mA)
• Low voltage (max. 20 V).
APPLICATIONS
• Medium frequency applications in thick and thin-film
circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
TYPE NUMBER MARKING CODE
(1)
BFS19 F2∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 5V
collector current (DC) − 30 mA
peak collector current − 30 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
NPN medium frequency transistor BFS19
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
BE
C
c
C
re
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=20V −−100 nA
I
= 0; VCB=20V; Tj= 100 °C −−10 µA
E
emitter cut-off current IC= 0; VEB=5 V −−100 nA
DC current gain IC= 1 mA; VCE=10V 65 − 225
base-emitter voltage IC= 1 mA; VCE= 10 V 650 − 740 mV
collector capacitance IE= 0; VCB=10V; f=1MHz − 1 − pF
feedback capacitance IC= 0 mA; VCB= 10 V; f = 1 MHz − 0.85 − pF
transition frequency IC= 1 mA; VCE= 10 V; f = 100 MHz − 260 − MHz
1999 Apr 15 3
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