Philips BFS17W Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFS17W
NPN 1 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
1995 Sep 04
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
APPLICATIONS
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
PINNING
PIN DESCRIPTION
1 base
handbook, 2 columns
3
2 emitter
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
3 collector
Top view
Marking code: E1
12
MBC870
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
f
C
C
T
CBO
CEO
C
tot
FE
T
c
re
j
collector-base voltage −−25 V
collector-emitter voltage −−15 V
DC collector current −−50 mA
total power dissipation up to Ts=118°C; note 1 −−300 mW
DC current gain IC= 2 mA; VCE= 1 V 25 90 −
transition frequency IC= 25 mA; VCE=5V − 1.6 − GHz
collector capacitance IE= 0; VCB= 10 V; f = 1 MHz − 0.8 1.5 pF
feedback capacitance IC= 1 mA; VCE=5V; f=1MHz − 0.75 − pF
junction temperature −−175 °C
Note
1. T
is the temperature at the soldering point of the collector pin.
s
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
CBO
CEO
EBO
C
tot
stg
j
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
total power dissipation Ts=118°C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 04 2
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