Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
BFS17W
NPN 1 GHz wideband transistor
Product specification
Supersedes data of November 1992
1995 Sep 04
Page 2
NXP Semiconductors Product specification
Fig.1 SOT323
handbook, 2 columns
3
12
MBC870
Top view
Marking code: E1
NPN 1 GHz wideband transistor BFS17W
APPLICATIONS
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
PINNING
PIN DESCRIPTION
1base
2emitter
DESCRIPTION
3 collector
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
f
C
C
T
CBO
CEO
C
tot
FE
T
c
re
j
collector-base voltage 25 V
collector-emitter voltage 15 V
DC collector current 50 mA
total power dissipation up to Ts=118C; note 1 300 mW
DC current gain IC=2mA; VCE=1V 25 90
transition frequency IC=25mA; VCE=5V 1.6 GHz
collector capacitance IE=0; VCB=10V; f=1MHz 0.8 1.5 pF
feedback capacitance IC=1mA; VCE=5V; f=1MHz 0.75 pF
junction temperature 175 C
Note
1. T
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
Note
1. T
1995 Sep 04 2
is the temperature at the soldering point of the collector pin.
s
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
is the temperature at the soldering point of the collector pin.
s
collector-base voltage open emitter 25 V
collector-emitter voltage open base 15 V
emitter-base voltage open collector 2.5 V
collector current (DC) 50 mA
total power dissipation Ts=118C; note 1 300 mW
storage temperature 65 +150 C
junction temperature 175 C
Page 3
NXP Semiconductors Product specification
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
200
0
MLB587
150
T ( C)
o
s
P
tot
(mW)
300
400
100
Fig.3 DC current gain as a function of collector
current; typical values.
VCE=1V.
handbook, halfpage
60
20
40
MBG237
0
110
h
FE
IC (mA)
10
−1
10
2
NPN 1 GHz wideband transistor BFS17W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25C (unless otherwise specified).
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
f
T
C
c
C
e
C
re
F noise figure I
thermal resistance from junction to soldering point up to Ts=118C; note 1 190 K/W
is the temperature at the soldering point of the collector pin.
collector cut-off current IE=0; VCB=10V 10 nA
DC current gain IC=2mA; VCE=1V 25 90
transition frequency IC=25mA; VCE=5V;
1.6 GHz
f=500MHz
collector capacitance IE=ie=0; VCB=10V;
0.8 1.5 pF
f=1MHz
emitter capacitance IC=ic=0; VEB=0.5V;
2 pF
f=1MHz
feedback capacitance IB=ib=0; VCE=5V;
f=1MHz; T
=2mA; VCE=5V;
C
f=500MHz;
amb
=25C
=
S
opt
0.75 pF
4.5 dB
1995 Sep 04 3
Page 4
NXP Semiconductors Product specification
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
IB=ib=0; f=1MHz.
handbook, halfpage
0
2
0
10
MBG238
24
1.5
1
0.5
68
C
re
(pF)
VCB (V)
Fig.5 Transition frequency as a function
of collector current; typical values.
T
amb
=25C; f = 500 MHz.
handbook, halfpage
2
1.5
1
MBG239
2.5
10
1
5 V
VCE = 10 V
f
T
(GHz)
IC (mA)
10
2
Fig.6 Minimum noise figure as function of
frequency; typical values.
VCE=10V.
handbook, halfpage
MBG240
F
(dB)
f (MHz)
20
15
10
5
0
10
3
10
2
10−310−210
−1
101
NPN 1 GHz wideband transistor BFS17W
1995 Sep 04 4
Page 5
NXP Semiconductors Product specification
UNIT
A
1
max
b
p
cD
E
e1H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
w M
b
p
D
e
1
e
A
B
A
1
L
p
Q
detail X
c
H
E
E
v M
A
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT323
04-11-04
06-03-16
NPN 1 GHz wideband transistor BFS17W
PACKAGE OUTLINE
1995 Sep 04 5
Page 6
NXP Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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(1)
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1995 Sep 04 6
Page 7
NXP Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
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Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
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Characteristics sections of this document is not warranted.
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Page 8
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Printed in The Netherlands R77/02/pp8 Date of release: 1995 Sep 04
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