Philips BFS17 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFS17
NPN 1 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
handbook, halfpage
3
• A wide range of RF applications such as:
– Mixers and oscillators in TV tuners
– RF communications equipment.
12
Top view
MSB003
PINNING
PIN DESCRIPTION
1 base
2 emitter
Marking code: E1p.
Fig.1 SOT23.
3 collector
QUICK REFERENCED DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
f
T
F noise figure I
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 15 V
DC collector current − 25 mA
total power dissipation up to Ts=70°C; note 1 − 300 mW
transition frequency IC= 25 mA; VCE= 5 V; f = 500 MHz; Tj=25°C1 − GHz
= 2 mA; VCE=5V; RS=50Ω; f = 500 MHz;
C
4.5 − dB
Tj=25°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
CM
tot
stg
j
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 25 mA
peak collector current − 50 mA
total power dissipation up to Ts=70°C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
Note to the Quick reference data and the Limiting values
1. T
is the temperature at the soldering point of the collector pin.
s
September 1995 2
Loading...