Philips bfr94a Datasheet

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BFR94A

NPN 5 GHz wideband transistor

Rev. 3 — 15 November 2010 Product data sheet

1. Product profile

1.1 General description

NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92

1.2 Features and benefits

 High power gain  Low noise figure  Low intermodulation distortion  AEC-Q101 qualified

1.3 Applications

 RF wideband amplifiers and oscillators

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CBO

CEO

tot

NF noise figure I

collector-base voltage - - 20 V collector-emitter

voltage collector current - - 25 mA total power dissipation Tsp≤ 95 °C--300mW feedback capacitance IC=iC=0mA; VCE=10V;

f=1MHz

transition frequency IC=15mA; VCE=10V;

f=500MHz

unilateral power gain IC=15mA; VCE=10V;

=25°C

amb

f=1GHz - 14 - dB f=2GHz - 8 - dB

=5mA; VCE=10V; f=1GHz;

= Γ

; T

opt

output voltage IMD = −60 dB; IC=14mA;

VCE=10V; RL=75Ω; fp+fq− fr= 793.25 MHz

amb

=25°C

-- 15V

-0.35- pF

-5- GHz

-2.1- dB

-150- mV

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NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1base 2emitter 3 collector

BFR94A

NPN 5 GHz wideband transistor

3. Ordering information

Table 3. Ordering information

Type number Package

BFR94A - plastic surface-mounted package; 3 leads SOT23

4. Marking

Table 4. Marking

Type number Marking code Description

BFR94A NL* * = p : made in Hong Kong

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

[1] Tsp is the temperature at the solder point of the collector pin.

collector-base voltage open emitter - 20 V collector-emitter voltage open base - 15 V emitter-base voltage open collector - 2 V collector current - 25 mA total power dissipation Tsp≤ 95 °C; see Figure 2 storage temperature −65 +150 °C junction temperature - +150 °C

sym02

Name Description Version

* = w : made in China

[1]

-300mW

Product data sheet Rev. 3 — 15 November 2010 2 of 14

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NXP Semiconductors

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-sp)

thermal resistance from junction to solder point

[1] Tsp is the temperature at the solder point of the collector pin.

7. Characteristics

Tsp≤ 95 °C

BFR94A

NPN 5 GHz wideband transistor

[1]

260 K/W

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

CBO

h C

collector-base cut-off current IE=0A; VCB=10V --50nA DC current gain IC=15mA; VCE= 10 V; see Figure 3 65 90 135 collector capacitance IE=ie=0A; VCB=10V; f=1MHz:

-0.6-pF

see Figure 4

emitter capacitance IC=ic=0A; VEB=10V; f=1MHz - 1.2 - pF feedback capacitance IC=ic=0mA; VCE=10V; f=1MHz - 0.35 - pF transition frequency IC=15mA; VCE= 10 V; f = 500 MHz;

-5-GHz

see Figure 5

unilateral power gain IC=15mA; VCE=10V; T

amb

=25°C

[1]

f=1GHz - 14 - dB f=2GHz - 8 - dB

NF noise figure I

=5mA; VCE=10V; ΓS= Γ

=25°C;

amb

opt

;

see Figure 12 and Figure 13

f=1GHz - 2.1 - dB f=2GHz - 3 - dB

output voltage

IMD2 second-order intermodulation

see Figure 15

[2][3]

-150-mV

[2][4]

- −50 - dB

distortion

[1] GUM is the maximum unilateral power gain, assuming S12 is zero and

[2] Measured on the same crystal in a SOT37 package (BFR90A). [3] IMD = −60 dB (DIN 45004B); I

at IMD = −60 dB; fp= 795.25 MHz;

p=VO

−6dB at fq= 803.25 MHz;

q=VO

−6dB at fr= 805.25 MHz;

r=VO

measured at f

=14mA; VCE=10V; RL=75Ω; VSWR < 2; T

[4] I

=60mV at fp=250MHz;

=60mV at fp=560MHz;

measured at f

Product data sheet Rev. 3 — 15 November 2010 3 of 14

------------------------------------------------------- -

− fr= 793.25 MHz

p+fq

= 810 MHz

p+fq

) 1S

=14mA; VCE=10V; RL=75Ω; VSWR < 2; T

dB.log=

)–(–(

=25°C;

amb

=25°C;

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NXP Semiconductors

001aam884

001aam885

BFR94A

NPN 5 GHz wideband transistor

75 Ω input

2.2 nF

1 nF

33 kΩ

300 Ω

1 nF

3.3 pF

2.2 nF

DUT

18 Ω

1 nF

0.82 pF

001aam88

75 Ω output

L1 = L2 = 5 μH choke. L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.

Fig 1. Intermodulation distortion and second harmonic distortion MATV test circuit

400

tot

(mW)

300

120

200

100

0 20015050 100

Tsp (°C)

0302010

IC (mA)

VCE=10V; Tj= 25 °C.

Fig 2. Power derating curve Fig 3. DC current gain as a function of collector

current; typical values

Product data sheet Rev. 3 — 15 November 2010 4 of 14

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NXP Semiconductors

BFR94A

NPN 5 GHz wideband transistor

1.0

(pF)

0.8

0.6

0.4

0.2

02015510

001aam886

VCB (V)

IC=iC= 0 mA; f = 1 MHz; Tj= 25 °C. VCE= 10 V; f = 500 MHz; T

Fig 4. Collector capacitance as a function of

collector-base voltage; typical values

gain (dB)

001aam888

MSG

(GHz)

0302010

amb

001aam887

IC (mA)

=25°C.

Fig 5. Transition frequency as a function of collector

current; typical values

MSG

001aam889

gain (dB)

0252010 155

IC (mA)

VCE= 10 V; f = 500 MHz. MSG = maximum stable gain.

Fig 6. Gain as a function of colle c tor current; typical

values

0252010 155

IC (mA)

VCE= 10 V; f = 500 MHz. MSG = maximum stable gain.

Fig 7. Gain as a function of collector current; typical

values

Product data sheet Rev. 3 — 15 November 2010 5 of 14

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NXP Semiconductors

BFR94A

NPN 5 GHz wideband transistor

gain (dB)

MSG

10 10

IC=5mA; VCE=10V. MSG = maximum stable gain. G

= maximum available gain.

max

001aam890

max

f (MHz)

gain (dB)

10 10

=5mA; VCE=10V.

MSG

MSG = maximum stable gain. G

= maximum available gain.

max

001aam891

max

f (MHz)

Fig 8. Gain as a function of frequency; typical values Fig 9. Minimum noise figure as a function of

frequency; typical values

(mS)

−20

1.7

1.8

2.0

NF = 3.0 dB

2.5

001aam892

(mS)

3.0

2.5

2.4

−10

001aam893

NF = 3.5 dB

−40 0806020 40

GS (mS)

−30 0604020

GS (mS)

IC=4mA; VCE=10V; f=800MHz. IC=14mA; VCE= 10 V; f = 800 MHz.

Fig 10. Circles of constant noise figure; typical values Fig 11. Circles of constant noise figure; typical values

Product data sheet Rev. 3 — 15 November 2010 6 of 14

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NXP Semiconductors

BFR94A

NPN 5 GHz wideband transistor

(dB)

1 GHz

500 MHz

110

001aam894

f = 2 GHz

IC (mA)

VCE=10V. VCE=10V.

Fig 12. Minimum noise figure as a function of

collector current; typical values

−45

IMD (dB)

−50

001aam896

(dB)

001aam895

IC = 15 mA

10 mA

5 mA

f (MHz)

Fig 13. Minimum noise figure as a function of

frequency; typical values

−35

IMD2

(dB)

−40

001aam897

−55

−60

−65

−70

10 302618 2214

IC (mA)

VCE=10V. VCE=10V.

Fig 14. Intermodulation distortion as a func tio n of

collector current; typical values

−45

−50

−55

−60

10 302618 2214

IC (mA)

Fig 15. Second-order intermodulation distortion as a

function of collector current; typical values

Product data sheet Rev. 3 — 15 November 2010 7 of 14

Page 8

NXP Semiconductors

BFR94A

NPN 5 GHz wideband transistor

0.5

0.2

−j

0.2

VCE= 10 V; IC= 14 mA; ZO=50Ω; T

0.5

amb

=25°C.

1200

0.50.2 2

1000

800

500

200

100 MHz

Fig 16. Common emitter input reflection coefficient (S11); typical values

90°

60°120°

001aam898

∞

180°

VCE= 10 V; IC= 14 mA; T

amb

100 MHz

=25°C.

200

800

1200

−90°

500

1000

10 20 30

60°120°

Fig 17. Common emitter forward transmission coefficient (S21); typical values

30°150°

+ϕ

0°

−ϕ

30°150°

001aam899

Product data sheet Rev. 3 — 15 November 2010 8 of 14

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NXP Semiconductors

180°

90°

typ

100

−90°

1200 MHz

1000

800

500

200

0.05 0.1 0.15

BFR94A

NPN 5 GHz wideband transistor

60°120°

30°150°

+ϕ

0°

−ϕ

30°150°

60°120°

001aam900

VCE= 10 V; IC= 14 mA; T

amb

=25°C.

Fig 18. Common emitter reverse transmission coefficient (S12); typical values

0.2

−j

0.2

VCE= 10 V; IC= 14 mA; ZO=50Ω; T

0.5

amb

0.50.2 2

=25°C.

1000

1200

800

500

200

100

MHz

Fig 19. Common emitter output reflection coefficient (S22); typical values

∞

001aam901

Product data sheet Rev. 3 — 15 November 2010 9 of 14

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NXP Semiconductors

BFR94A

NPN 5 GHz wideband transistor

8. Package outline

Plastic surface-mounted package; 3 leads SOT2

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.9

OUTLINE VERSION

SOT23 TO-236AB

max.

0.1

0.48

0.15

0.09

3.0

2.8

0.38

IEC JEDEC JEITA

1.4

1.9

1.2

REFERENCES

Qwv

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04 06-03-16

0.95

2.5

2.1

Fig 20. Package outline SOT23

Product data sheet Rev. 3 — 15 November 2010 10 of 14

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NXP Semiconductors

BFR94A

NPN 5 GHz wideband transistor

9. Abbreviations

Table 8. Abbreviations

Acronym Description

NPN Negative Positive Negative PNP Positive Negative Positive RF Radio Frequency MATV Master Antenna Television VSWR Voltage Standing Wave Ratio

10. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFR94A v.3 20101115 Product data sheet - BFR94A v.2 Modifications:

BFR94A v.2 19971204 Product data sheet - -

• The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Replaces previous data sheet and documentation of BFR94A.

Product data sheet Rev. 3 — 15 November 2010 11 of 14

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NXP Semiconductors

BFR94A

NPN 5 GHz wideband transistor

11. Legal information

11.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have cha nged since thi s document w as published and may dif fe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

11.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, unless otherwise

Product data sheet Rev. 3 — 15 November 2010 12 of 14

Page 13

NXP Semiconductors

BFR94A

NPN 5 GHz wideband transistor

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neither qua lif ied nor test ed in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equ ipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct cl aims resulting from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

11.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 3 — 15 November 2010 13 of 14

Page 14

NXP Semiconductors

13. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Contact information. . . . . . . . . . . . . . . . . . . . . 13

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

BFR94A

NPN 5 GHz wideband transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 15 November 2010

Document identifier: BFR94A