Philips BFR93AW Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFR93AW
NPN 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 18
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
FEATURES
• High power gain
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, 2 columns
Top view
Marking code: R2.
Fig.1 SOT323
3
12
MBC870
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
F noise figure I
T
j
collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−12 V
collector current (DC) −−35 mA
total power dissipation up to Ts=93°C; note 1 −−300 mW
DC current gain IC= 30 mA; VCE=5V 40 90 −
feedback capacitance IC= 0; VCE= 5 V; f = 1 MHz;
T
=25°C
amb
− 0.6 − pF
transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz 4 5 − GHz
maximum unilateral power
gain
IC= 30 mA; VCE= 8 V; f = 1 GHz;
T
=25°C
amb
I
= 30 mA; VCE= 8 V; f = 2 GHz;
C
T
=25°C
amb
= 5 mA; VCE= 8 V; f = 1 GHz;
C
Γs= Γ
opt
− 13 − dB
− 8 − dB
− 1.5 − dB
junction temperature −−150 °C
Note
1. T
is the temperature at the soldering point of the collector pin.
s
1995 Sep 18 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITION MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITION VALUE UNIT
R
th j-s
collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
emitter-base voltage open collector − 2V
collector current (DC) − 35 mA
total power dissipation up to Ts=93°C; see Fig.2; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
thermal resistance from junction to
up to Ts=93°C; note 1 190 K/W
soldering point
Note to the Limiting values and Thermal characteristics
1. T
is the temperature at the soldering point of the collector pin.
s
150
MLB540
o
T ( C)
s
400
P
tot
(mW)
300
200
100
0
0 50 100 200
Fig.2 Power derating curve.
1995 Sep 18 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
CHARACTERISTICS
T
=25°C (unless otherwise specified).
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure I
collector leakage current IE= 0; VCB=5V −−50 nA
DC current gain IC= 30 mA; VCE= 5 V 40 90 −
collector capacitance IE=ie= 0; VCB= 5 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V;
− 2.3 − pF
f = 1 MHz
feedback capacitance IC= 0; VCE= 5 V; f = 1 MHz − 0.6 − pF
transition frequency IC= 30 mA; VCE=5V;
45−GHz
f = 500 MHz
maximum unilateral power
gain; note 1
IC= 30 mA; VCE=8V;
f = 1 GHz; T
I
= 30 mA; VCE=8V;
C
f = 2 GHz; T
= 5 mA; VCE=8V;
C
f = 1 GHz; Γs= Γ
= 5 mA; VCE=8V;
I
C
f = 2 GHz; Γs= Γ
amb
amb
=25°C
=25°C
opt
opt
− 13 − dB
− 8 − dB
− 1.5 − dB
− 2.1 − dB
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero and
UM
2
s
G
UM
10
-----------------------------------------------------------1s
–()1s
21
2
11
–()
dB.log=
2
22
1995 Sep 18 4
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