Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
BFR93AW
NPN 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
1995 Sep 18
Page 2
NXP Semiconductors Product specification
Marking code: R2.
Fig.1 SOT323
handbook, 2 columns
3
12
MBC870
Top view
NPN 5 GHz wideband transistor BFR93AW
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
PINNING
PIN DESCRIPTION
1base
2emitter
3 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
Fnoise figure I
T
j
collector-base voltage open emitter 15 V
collector-emitter voltage open base 12 V
collector current (DC) 35 mA
total power dissipation up to Ts=93C; note 1 300 mW
DC current gain IC=30mA; VCE=5V 40 90
feedback capacitance IC=0; VCE= 5 V; f = 1 MHz;
=25C
T
amb
0.6 pF
transition frequency IC=30mA; VCE=5V; f=500MHz 4 5 GHz
maximum unilateral power
gain
IC=30mA; VCE=8V; f=1GHz;
T
=25C
amb
=30mA; VCE=8V; f=2GHz;
I
C
=25C
T
amb
=5mA; VCE= 8 V; f = 1 GHz;
C
=
s
opt
13 dB
8 dB
1.5 dB
junction temperature 150 C
Note
1. T
1995 Sep 18 2
is the temperature at the soldering point of the collector pin.
s
Page 3
NXP Semiconductors Product specification
Fig.2 Power derating curve.
0 50 100 200
200
0
MLB540
150
T ( C)
o
s
P
tot
(mW)
300
400
100
NPN 5 GHz wideband transistor BFR93AW
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITION MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITION VALUE UNIT
R
th j-s
collector-base voltage open emitter 15 V
collector-emitter voltage open base 12 V
emitter-base voltage open collector 2V
collector current (DC) 35 mA
total power dissipation up to Ts=93C; see Fig.2; note 1 300 mW
storage temperature 65 +150 C
junction temperature 150 C
thermal resistance from junction to
up to Ts=93C; note 1 190 K/W
soldering point
Note to the Limiting values and Thermal characteristics
is the temperature at the soldering point of the collector pin.
1. T
s
1995 Sep 18 3
Page 4
NXP Semiconductors Product specification
G
UM
10
s
21
2
1s
11
2
–1s
22
2
–
--------------------------------------------------------
dB.log=
NPN 5 GHz wideband transistor BFR93AW
CHARACTERISTICS
T
=25C (unless otherwise specified).
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure I
collector leakage current IE=0; VCB=5V 50 nA
DC current gain IC=30mA; VCE=5V 40 90
collector capacitance IE=ie=0; VCB=5V; f=1MHz 0.7 pF
emitter capacitance IC=ic=0; VEB=0.5V;
2.3 pF
f=1MHz
feedback capacitance IC=0; VCE=5V; f=1MHz 0.6 pF
transition frequency IC=30mA; VCE=5V;
45 GHz
f=500MHz
maximum unilateral power
gain; note 1
IC=30mA; VCE=8V;
f=1GHz; T
=30mA; VCE=8V;
I
C
f=2GHz; T
=5mA; VCE=8V;
C
f=1GHz;
=5mA; VCE=8V;
I
C
f=2GHz;
amb
amb
s
s
=
=
=25C
=25C
opt
opt
13 dB
8 dB
1.5 dB
2.1 dB
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero and
UM
1995 Sep 18 4
Page 5
NXP Semiconductors Product specification
Fig.3 DC current gain as a function of collector
current; typical values.
VCE=5V.
handbook, halfpage
0102030
120
0
40
80
MCD087
h
FE
I (mA)
C
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
IC=0; f=1MHz.
0
1
0
MBG203
48
C
re
(pF)
0.8
0.6
0.4
0.2
12 16
VCB (V)
Fig.5 Transition frequency as a function
of collector current; typical values.
VCE= 5 V; f = 500 MHz; T
amb
=25C.
4
2
0
MBG204
6
10
2
101
f
T
(GHz)
IC (mA)
NPN 5 GHz wideband transistor BFR93AW
1995 Sep 18 5
Page 6
NXP Semiconductors Product specification
Fig.6 Gain as a function of collector current;
typical values.
VCE=8V; f=500MHz.
0
30
20
10
0
10 20
MBG202
30
G
UM
MSG
IC (mA)
gain
(dB)
Fig.7 Gain as a function of collector current;
typical values.
VCE=8V; f=1GHz.
0
30
20
10
0
10 20
MBG201
30
MSG
G
UM
gain
(dB)
IC (mA)
Fig.8 Gain as a function of frequency;
typical values.
VCE=8V; IC=10mA.
handbook, halfpage
50
0
10
MBG200
10
2
10
3
10
4
10
20
30
40
f (MHz)
G
UM
G
max
MSG
gain
(dB)
Fig.9 Gain as a function of frequency;
typical values.
VCE=8V; IC=30mA.
handbook, halfpage
50
0
10
MBG207
10
2
10
3
10
4
10
20
30
40
f (MHz)
G
UM
G
max
MSG
gain
(dB)
NPN 5 GHz wideband transistor BFR93AW
1995 Sep 18 6
Page 7
NXP Semiconductors Product specification
Fig.10 Minimum noise figure as a function of
collector current; typical values.
VCE=8V.
handbook, halfpage
2
4
2
0
10
MGC901
101
6
1 GHz
500 MHz
f = 2 GHz
F
(dB)
IC (mA)
Fig.11 Minimum noise figure as a function of
collector current; typical values.
VCE=8V.
handbook, halfpage
4
2
0
MGC900
6
f (MHz)
10
4
10
3
10
2
IC = 30 mA
10 mA
5 mA
F
(dB)
Fig.12 Common emitter noise figure circles; typical values.
f=500MHz; VCE=8V; IC=10mA; Zo=50
handbook, full pagewidth
MGC879
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
45
o
90
o
135
o
0.5
0
0.2
0.5
1
2
5
2
F = 4 dB
F = 3 dB
F = 2 dB
opt
Γ
F = 1.4 dB
min
0.2
2
1 5
5
o
180
0.2 0.5
1
NPN 5 GHz wideband transistor BFR93AW
1995 Sep 18 7
Page 8
NXP Semiconductors Product specification
Fig.13 Common emitter noise figure circles; typical values.
f=1GHz; VCE=8V; IC=10mA; Zo=50
handbook, full pagewidth
MGC880
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
45
o
90
o
135
o
1
0.5
1
2
5
21 5
180
o
2
5
0.5
0.50.2
0.2
F = 2.5 dB
F = 3 dB
F = 4 dB
0.2
opt
Γ
F = 2 dB
min
0
G = 13 dB
ms
Γ
G = 13.8 dB
max
G = 12 dB
G = 11 dB
f=2GHz; VCE=8V; IC=10mA; Zo=50
Fig.14 Common emitter noise figure circles; typical values.
handbook, full pagewidth
MGC881
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
45
o
90
o
135
o
1
0.5
1
2
5
21 5
180
o
2
5
0.5
0.2
0.2
(4)
(3)
(2)
(5)
(6)
(7)
(8)
(1)
0.2
0
0.5
(1)
opt
; F
min
=3dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(5)
ms;Gmax
=8.1dB.
(6) G = 7 dB.
(7) G = 6 dB.
(8) G = 5 dB.
NPN 5 GHz wideband transistor BFR93AW
1995 Sep 18 8
Page 9
NXP Semiconductors Product specification
Fig.15 Common emitter input reflection coefficient (s11); typical values.
VCE=8V; IC=30mA; Zo=50.
handbook, full pagewidth
MGC878
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
45
o
90
o
135
o
1
0.5
0.2
0.5
1
2
5
2
0.2
2
5
5
o
180
0.2 1
0
0.5
40 MHz
3 GHz
VCE=8V; IC=30mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
handbook, full pagewidth
MGC898
0
o
90
o
135
o
180
o
90
o
50 40 30 20 10
45
o
135
o
45
o
40 MHz
3 GHz
NPN 5 GHz wideband transistor BFR93AW
1995 Sep 18 9
Page 10
NXP Semiconductors Product specification
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
VCE=8V; IC=30mA.
handbook, full pagewidth
MGC899
0
o
90
o
135
o
180
o
90
o
0.5 0.4 0.3 0.2 0.1
45
o
135
o
45
o
40 MHz
3 GHz
VCE=8V; IC=30mA; Zo=50.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
handbook, full pagewidth
MGC877
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
1
0.5
0
0.2
0.5
1
2
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
5
NPN 5 GHz wideband transistor BFR93AW
1995 Sep 18 10
Page 11
NXP Semiconductors Product specification
UNIT
A
1
max
b
p
cD
E
e1HEL
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
w M
b
p
D
e
1
e
A
B
A
1
L
p
Q
detail X
c
H
E
E
v M
A
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT323
04-11-04
06-03-16
NPN 5 GHz wideband transistor BFR93AW
PACKAGE OUTLINE
1995 Sep 18 11
Page 12
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
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However, NXP Semiconductors does not give any
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
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NXP Semiconductors makes no representation or
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design and operating safeguards to minimize the ris ks
associated with their applications and products.
1995 Sep 18 12
Page 13
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
NXP Semiconductors does not accept any liability related
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on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
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customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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not complete, exhaustive or legally binding.
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1995 Sep 18 13
Page 14
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Printed in The Netherlands R77/02/pp14 Date of release: 1995 Sep 18
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