Philips BFR93AT Datasheet
DISCRETE SEMICONDUCTORS
M3D173
DATA SHEET
BFR93AT
NPN 5 GHz wideband transistor
Preliminary specification 1999 Oct 19
Philips Semiconductors Preliminary specification
NPN 5 GHz wideband transistor BFR93AT
FEATURES
• High power gain
• Gold metallization ensures excellent reliability
• SOT416 (SC75) package.
APPLICATIONS
It is designed for use in RF amplifiers, mixers and
oscillators with signal frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated in a plastic SOT416
(SC75) package. The BFR93AT uses the same crystal as
the SOT23 version, BFR93A.
PINNING
PIN DESCRIPTION
1base
2 emitter
3 collector
handbook, halfpage
12
Marking code: R2.
3
Fig.1 SOT416
MAM337
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
F noise figure I
T
j
collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−12 V
collector current (DC) −−35 mA
total power dissipation up to Ts=93°C; note 1 −−300 mW
DC current gain IC=30mA; VCE=5V 40 90 −
feedback capacitance IC=0; VCE=5V; f=1MHz;
=25°C
T
amb
− 0.6 − pF
transition frequency IC=30mA; VCE=5V; f=500MHz 4 5 − GHz
maximum unilateral power
gain
IC=30mA; VCE= 8 V; f = 1 GHz;
T
=25°C
amb
I
=30mA; VCE= 8 V; f = 2 GHz;
C
T
=25°C
amb
=5mA; VCE= 8 V; f = 1 GHz;
C
Γ
= Γ
s
opt
− 13 − dB
− 8 − dB
− 1.5 − dB
junction temperature −−150 °C
Note
1. T
is the temperature at the soldering point of the collector pin.
s
1999 Oct 19 2
Philips Semiconductors Preliminary specification
Fig.2 Power derating curve.
0 50 100 200
200
0
MLB540
150
T ( C)
o
s
P
tot
(mW)
300
400
100
NPN 5 GHz wideband transistor BFR93AT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITION MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITION VALUE UNIT
R
th j-s
collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
emitter-base voltage open collector − 2V
collector current (DC) − 35 mA
total power dissipation up to Ts=93°C; see Fig.2; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
thermal resistance from junction to
up to Ts=93°C; note 1 190 K/W
soldering point
Note to the Limiting values and Thermal characteristics
is the temperature at the soldering point of the collector pin.
1. T
s
1999 Oct 19 3
Philips Semiconductors Preliminary specification
NPN 5 GHz wideband transistor BFR93AT
CHARACTERISTICS
T
=25°C (unless otherwise specified).
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure I
collector leakage current IE=0; VCB=5V −−50 nA
DC current gain IC=30mA; VCE=5V 40 90 −
collector capacitance IE=ie=0; VCB=5V; f=1MHz − 0.7 − pF
emitter capacitance IC=ic=0; VEB=0.5V;
− 2.3 − pF
f=1MHz
feedback capacitance IC=0; VCE=5V; f=1MHz − 0.6 − pF
transition frequency IC=30mA; VCE=5V;
45− GHz
f = 500 MHz
maximum unilateral power
gain; note 1
IC=30mA; VCE=8V;
f=1GHz; T
=30mA; VCE=8V;
I
C
f=2GHz; T
=5mA; VCE=8V;
C
f=1GHz; Γ
=5mA; VCE=8V;
I
C
f=2GHz; Γ
amb
amb
s
s
= Γ
= Γ
=25°C
=25°C
opt
opt
− 13 − dB
− 8 − dB
− 1.5 − dB
− 2.1 − dB
Note
1. G
2
s
is the maximum unilateral power gain, assuming s12 is zero and
UM
G
UM
--------------------------------------------------------
10
1s
21
2
–()1s
11
–()
22
2
dB.log=
1999 Oct 19 4
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