Philips BFR93A Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFR93A

NPN 6 GHz wideband transistor

Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14

1997 Oct 29

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

FEATURES

• High power gain

• Low noise figure

• Very low intermodulation distortion.

APPLICA TIONS

• RF wideband amplifiers and
oscillators.

DESCRIPTION

NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.

PINNING

PIN DESCRIPTION

1 base
2 emitter

page

Marking code: R2p.

3

12

Top view

MSB003

Fig.1 SOT23.

3 collector

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

C

re

f

T

G

UM

F noise figure I

V

O

collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
collector current (DC) − 35 mA
total power dissipation Ts≤ 95 °C − 300 mW
feedback capacitance IC= 0; VCE= 5 V; f = 1 MHz 0.6 − pF
transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz 6 − GHz
maximum unilateral power gain IC= 30 mA; VCE= 8 V; f = 1 GHz; T

I

= 30 mA; VCE= 8 V; f = 2 GHz; T

C

= 5 mA; VCE= 8 V; f = 1 GHz; Γs= Γ

C

T

=25°C

amb

output voltage dim= −60 dB; IC= 30 mA; VCE=8V;

RL=75Ω; T

amb

=25°C;

=25°C13 − dB

amb

=25°C7 − dB

amb

opt

;

1.9 − dB

425 − mV

fp+fq−fr= 793.25 MHz

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
emitter-base voltage open collector − 2V
collector current (DC) − 35 mA
total power dissipation Ts≤ 95 °C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − +175 °C

Note

1. T

is the temperature at the soldering point of the collector pin.

s

1997 Oct 29 2

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

1. T

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F noise figure (note 2) I

V

O

d

2

thermal resistance from junction to soldering point Ts≤ 95 °C; note 1 260 K/W

is the temperature at the soldering point of the collector pin.

collector cut-off current IE= 0; VCB=5V −−50 nA
DC current gain IC= 30 mA; VCE= 5 V 40 90 −
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.9 − pF
feedback capacitance IC=ic= 0; VCE= 5 V; f = 1 MHz;

T

=25°C

amb

− 0.6 − pF

transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz 4.5 6 − GHz
maximum unilateral power gain

(note 1)

IC= 30 mA; VCE= 8 V; f = 1 GHz;
T

=25°C

amb

= 30 mA; VCE= 8 V; f = 2 GHz;

I

C

T

=25°C

amb

= 5 mA; VCE= 8 V; f = 1 GHz;

C

Γs= Γ

I

C

Γs= Γ

; T

amb

=25°C

opt

= 5 mA; VCE= 8 V; f = 2 GHz;

; T

amb

=25°C

opt

− 13 − dB

− 7 − dB

− 1.9 − dB

− 3 − dB

output voltage notes 2 and 3 − 425 − mV
second order intermodulation

notes 2 and 4 −−50 − dB

distortion

Notes

1. G

is the maximum unilateral power gain, assuming S12 is zero and .

UM

2. Measured on the same die in a SOT37 package (BFR91A).

3. d

= −60 dB (DIN 45004B); IC= 30 mA; VCE= 8 V; RL=75Ω; T

im

Vp=VOat dim= −60 dB; fp= 795.25 MHz;
Vq=VO−6 dB at fq= 803.25 MHz;
Vr=VO−6 dB at fr= 805.25 MHz;
measured at fp+fq−fr= 793.25 MHz.

4. IC= 30 mA; VCE= 8 V; RL=75Ω; T

amb

=25°C;
Vp= 200 mV at fp= 250 MHz;
Vq= 200 mV at fq= 560 MHz;
measured at fp+fq= 810 MHz.

1997 Oct 29 3

amb

G

UM

=25°C;

10 log

--------------------------------------------------------------



1

S

–



11

2

S

21

2



1

–



dB=

2

S

22

Philips Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

handbook, full pagewidth

L1=L3=5µH choke.
L2 =3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.

V

BB

75 Ω
input

1.5 nF

1 nF

10 kΩ

L1

L2

270 Ω

3.3 pF

Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.

1 nF

1.5 nF

L3

DUT

18 Ω

1 nF

0.68 pF

MBB251

V

CC

75 Ω

output

150

Ts(

MBG246

o

C)

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100 200

Fig.3 Power derating curve.

1997 Oct 29 4

120

handbook, halfpage

h

FE

80

40

0

0102030

VCE= 5 V; Tj=25°C.

Fig.4 DC current gain as a function of

collector current.

I (mA)

C

MCD087