Philips BFR92AT Datasheet

DISCRETE SEMICONDUCTORS

M3D173

DATA SHEET

BFR92AT

NPN 5 GHz wideband transistor

Preliminary specification 1999 Oct 18

Philips Semiconductors Preliminary specification

NPN 5 GHz wideband transistor BFR92AT

FEATURES

• High power gain

• Gold metallization ensures excellent reliability

• SOT416 (SC75) package.

APPLICATIONS

It is designed for use in RF amplifiers, mixers and
oscillators with signal frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated in a plastic SOT416
(SC75) package. The BFR92AT uses the same crystal as
the SOT23 version, BFR92A.

PINNING

PIN DESCRIPTION

1base
2 emitter
3 collector

handbook, halfpage

12

Marking code: P2.

3

Fig.1 SOT416

MAM337

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

C

re

f

T

G

UM

F noise figure I

T

j

collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−25 mA
total power dissipation up to Ts=93°C; note 1 −−300 mW
current gain IC=15mA; VCE=10V 40 90 −
feedback capacitance IC=0; VCE=10V; f=1MHz;

T

=25°C

amb

− 0.35 − pF

transition frequency IC=15mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power

gain

IC=15mA; VCE=10V; f=1GHz;
T

=25°C

amb

=15mA; VCE=10V; f=2GHz;

I

C

T

=25°C

amb

=5mA; VCE= 10 V; f = 1 GHz;

C

Γ

= Γ

s

opt

− 14 − dB

− 8 − dB

− 2 − dB

junction temperature −−150 °C

Note

1. T

is the temperature at the soldering point of the collector pin.

s

1999 Oct 18 2

Philips Semiconductors Preliminary specification

Fig.2 Power derating curve

0 50 100 200

200

0

MLB540

150

T ( C)

o

s

P

tot

(mW)

300

400

100

NPN 5 GHz wideband transistor BFR92AT

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2V
collector current (DC) − 25 mA
total power dissipation up to Ts=93°C; see Fig.2; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C

thermal resistance from junction to

up to Ts=93°C; note 1 190 K/W

soldering point

Note to the Limiting values and Thermal characteristics

1. T

is the temperature at the soldering point of the collector pin.

s

1999 Oct 18 3

Philips Semiconductors Preliminary specification

NPN 5 GHz wideband transistor BFR92AT

CHARACTERISTICS

T

=25°C (unless otherwise specified).

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F noise figure I

collector leakage current IE=0; VCB=10V −−50 nA
DC current gain IC=15mA; VCE= 10 V 40 90 −
collector capacitance IE=ie=0; VCB=10V; f=1MHz − 0.6 − pF
emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz − 0.9 − pF
feedback capacitance IC=0; VCE=10V; f=1MHz − 0.35 − pF
transition frequency IC=15mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power

gain; note 1

IC=15mA; VCE=10V;
f=1GHz; T

I

=15mA; VCE=10V;

C

f=2GHz; T

=5mA; VCE=10V;

C

f=1GHz; Γ

=5mA; VCE=10V;

I

C

f=2GHz; Γ

amb

amb

s

s

= Γ

= Γ

=25°C

=25°C

opt

opt

− 14 − dB

− 8 − dB

− 2 − dB

− 3 − dB

Note

1. G

is the maximum unilateral power gain, assuming s12 is zero and

UM

2

s

G

UM

--------------------------------------------------------

10

1s

21

2

–()1s

11

–()

22

dB.log=

2

1999 Oct 18 4