Philips bfr520 Datasheet

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BFR520

NPN 9 GHz wideband transistor

Rev. 03 — 1 September 2004 Product data sheet

1. Product proﬁle

1.1 General description

The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.

1.2 Features

■ High power gain

■ Low noise ﬁgure

■ High transition frequency

■ Gold metallization ensures excellent reliability.

1.3 Applications

■ RF front end wideband applications in the GHz range

◆ Analog and digital cellular telephones

◆ Cordless telephones (CT1, CT2, DECT, etc.)

◆ Radar detectors

◆ Pagers and satellite TV tuners (SATV)

◆ Repeater ampliﬁers in ﬁber-optic systems.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V V

I P h C

CBO CES

tot

collector-base voltage - - 20 V collector-emitter

voltage collector current (DC) - - 70 mA total power dissipation up to Tsp=97°C DC current gain IC= 20 mA; VCE= 6 V 60 120 250 feedback capacitance IC=ic= 0 A; VCB=6V;

transition frequency IC= 20 mA; VCE=6V;

maximum unilateral power gain

RBE=0Ω --15V

[1]

- - 300 mW

- 0.4 - pF

f=1MHz

-9-GHz

f=1GHz IC= 20 mA; VCE=6V;

=25°C

amb

f = 900 MHz - 15 - dB f=2GHz -9-dB

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Philips Semiconductors

BFR520

NPN 9 GHz wideband transistor

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

s21

insertion power gain IC= 20 mA; VCE=6V;

NF noise ﬁgure Γ

[1] Tspis the temperature at the soldering point of the collector tab.

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 base 2 emitter 3 collector

…continued

=25°C;

amb

f = 900 MHz

= Γ

; T

opt

= 5 mA; VCE=6V;

f = 900 MHz

= 20 mA;VCE=6V;

f = 900 MHz

= 5 mA; VCE=8V;

f=2GHz

amb

=25°C

13 14 - dB

- 1.1 1.6 dB

- 1.6 2.1 dB

- 1.9 - dB

3. Ordering information

Table 3: Ordering information

Type number Package

BFR520 - plastic surface mounted package; 3 leads SOT23

4. Marking

Table 4: Marking

Type number Marking code

BFR520 32*

[1] * = p: Made in Hong Kong

* = t: Made in Malaysia * = W: Made in China.

SOT23

sym021

Name Description Version

[1]

Product data sheet Rev. 03 — 1 September 2004 2 of 13

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Philips Semiconductors

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CES

EBO

tot

stg

[1] Tsp is the temperature at the soldering point of the collector tab.

collector-base voltage open emitter - 20 V collector-emitter voltage RBE=0Ω -15V emitter-base voltage open collector - 2.5 V collector current (DC) - 70 mA total power dissipation up to Tsp=97°C storage temperature −65 150 °C junction temperature - 175 °C

6. Thermal characteristics

BFR520

NPN 9 GHz wideband transistor

[1]

- 300 mW

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-s)

[1] Tsp is the temperature at the soldering point of the collector tab.

7. Characteristics

Table 7: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

CBO



s

thermal resistance from junction to soldering point

collector cut-off

IE= 0 A; VCB=6V --50nA

current DC current gain IC= 20 mA; VCE= 6 V 60 120 250 emitter

capacitance collector

capacitance feedback

capacitance transition

frequency maximum

unilateralpower gain

IC=ic= 0 A; VEB= 0.5 V;

-1-pF

f=1MHz IE=ie= 0 A; VCB=6V;

- 0.5 - pF

f=1MHz IC= 0 A; VCB=6V;

- 0.4 - pF

f=1MHz IC= 20 mA; VCE=6V;

-9-GHz

f=1GHz IC= 20 mA; VCE=6V;

=25°C

amb

[1]

f = 900 MHz - 15 - dB f=2GHz -9-dB

insertion power gain

IC= 20 mA; VCE=6V; T

=25°C; f = 900 MHz

amb

13 14 - dB

[1]

260 K/W

Product data sheet Rev. 03 — 1 September 2004 3 of 13

Page 4

Philips Semiconductors

BFR520

NPN 9 GHz wideband transistor

Table 7: Characteristics

…continued

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

NF noise ﬁgure Γs= Γ

L(1dB)

output power at 1 dB gain compression

IC= 20 mA; VCE=6V; R f = 900 MHz

ITO third order

; VCE=6V;

opt

=25°C

amb

= 5 mA; f = 900 MHz - 1.1 1.6 dB

= 20 mA; f = 900 MHz - 1.6 2.1 dB

= 5 mA; f = 2 GHz - 1.9 - dB

- 17 - dBm

=50Ω; T

amb

=25°C;

[2]

- 26 - dBm

intercept point

[1] GUM is the maximum unilateral power gain, assuming s12 is zero and

[2] I

= 20 mA; VCE= 6 V; RL=50Ω; T

Measured at f

(2p−q)

-----------------------------------------------------

= 898 MHz and f

–()1s

–()

amb

(2q−p)

=25°C; fp= 900 MHz; fq= 902 MHz

= 904 MHz.

dB.log=

400

tot

(mW)

300

200

100

0 50 100 200

150

mra702

(°C)

250

200

150

100

−2

VCE=6V.

−1

mra703

IC (mA)

Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector

current.

Product data sheet Rev. 03 — 1 September 2004 4 of 13

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Philips Semiconductors

BFR520

NPN 9 GHz wideband transistor

0.6

(pF)

0.4

0.2

04812

mra704

(V)

IC = 0 A; f = 1 MHz. T

Fig 3. Feedback capacitance as a function of

collector-base voltage.

gain (dB)

MSG G

mra706

max

3 V

(mA)

mra705

(GHz)

−1

=25°C; f = 1 GHz.

amb

VCE = 6 V

11010

Fig 4. Transition frequency as a function of collector

current.

gain (dB)

mra707

0102030

(mA)

0102030

max

(mA)

VCE= 6 V; f = 900 MHz. VCE= 6 V; f = 2 GHz.

Fig 5. Gain as a function of collector current;

f = 900 MHz.

Fig 6. Gain as a function of collector current;

f = 2 GHz.

Product data sheet Rev. 03 — 1 September 2004 5 of 13

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Philips Semiconductors

BFR520

NPN 9 GHz wideband transistor

gain (dB)

10 10

MSG

mra708

max

f (MHz)

gain (dB)

10 10

MSG

max

f (MHz)

mra709

VCE= 6 V; IC= 5 mA. VCE= 6 V; IC= 20 mA.

Fig 7. Gain as a function of frequency; IC = 5 mA. Fig 8. Gain as a function of frequency; IC = 20 mA.

(dB)

min

mra714

f (MHz)

900

1000

ass

2000

ass

(dB)

min

(dB)

IC (mA)

ass

mra715

G (dB)

ass

2000

1000

900 500

min

(mA)

−5

VCE=6 V. VCE=6 V.

Fig 9. Minimum noise ﬁgure and associated available

gain as functions of collector current.

min

f (MHz)

−5

Fig 10. Minimum noise ﬁgure and associated available

gain as functions of frequency.

Product data sheet Rev. 03 — 1 September 2004 6 of 13

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Philips Semiconductors

pot. unst. region

+0.5

stability circle

90° +1

BFR520

NPN 9 GHz wideband transistor

1.0

45°135°

0.8

0.6

+0.2

180°

−0.2

0.50.2

F = 3 dB

−0.5

Zo=50Ω; VCE= 6 V; IC= 5 mA; f = 900 MHz.

Fig 11. Noise circle ﬁgure; f = 900 MHz.

+0.5

+0.2

max

= 9.3 dB

G = 9 dB

0.50.2

180°

0 G

F = 2 dB

min

OPT

F = 1.5 dB

−1

−90°

90° +1

F = 2.5 dB

= 1. 9 dB

min

= 1.1 dB

OPT

F = 3 dB

−2

−5

−45°−135°

mra716

45°135°

0.4

0.2

0°

1.0

0.8

0.6

0.4

0.2

0°

−2

−5

−45°−135°

1.0

mra717

−0.2 G = 8 dB

G = 7 dB

−0.5

−1

−90°

Zo=50Ω; VCE= 6 V; IC= 5 mA; f = 2000 MHz.

Fig 12. Noise circle ﬁgure; f = 2000 MHz.

Product data sheet Rev. 03 — 1 September 2004 7 of 13

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Philips Semiconductors

BFR520

NPN 9 GHz wideband transistor

90° +1

+0.5

+0.2

3 GHz

180°

−0.2

0.50.2

−0.5

−1

−90°

VCE= 6 V; IC= 20 mA; Zo=50Ω.

Fig 13. Common emitter input reﬂection coefﬁcient (s11).

90°

40 MHz

−2

1.0

45°135°

−5

−45°−135°

mra710

0.8

0.6

0.4

0.2

0°

1.0

40 MHz

180°

50 40 30 20 10

3 GHz

−90°

VCE= 6 V; IC= 20 mA.

Fig 14. Common emitter forward transmission coefﬁcient (s21).

45°135°

0°

−45°−135°

mra711

Product data sheet Rev. 03 — 1 September 2004 8 of 13

Page 9

Philips Semiconductors

BFR520

NPN 9 GHz wideband transistor

90°

45°135°

3 GHz

180°

0.5 0.4 0.3 0.2 0.1

40 MHz

−90°

VCE= 6 V; IC= 20 mA.

Fig 15. Common emitter reverse transmission coefﬁcient (s12).

90° +1

180°

+0.5

+0.2

−0.2

0.50.2

3 GHz

−45°−135°

45°135°

40 MHz

−5

mra712

0°

1.0

0.8

0.6

0.4

0.2

0°

−0.5

−1

−90°

−2

−45°−135°

1.0

mra713

VCE= 6 V; IC= 20 mA; Zo=50Ω.

Fig 16. Common emitter output reﬂection coefﬁcient (s22).

Product data sheet Rev. 03 — 1 September 2004 9 of 13

Page 10

Philips Semiconductors

BFR520

NPN 9 GHz wideband transistor

8. Package outline

Plastic surface mounted package; 3 leads SOT23

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.9

OUTLINE VERSION

SOT23 TO-236AB

max.

0.1

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

3.0

2.8

1.4

1.2

REFERENCES

1.9

0.95

Qwv

2.5

2.1

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28 99-09-13

Fig 17. Package outline SOT23 (TO-236AB).

Product data sheet Rev. 03 — 1 September 2004 10 of 13

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Philips Semiconductors

NPN 9 GHz wideband transistor

BFR520

9. Revision history

Table 8: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BFR520_3 20040901 Product data sheet - 9397 750 13397 BFR520_CNV_2 Modiﬁcations:

BFR520_CNV_2 19971204 Product speciﬁcation - not applicable -

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

• Table 4 “Marking”: Format of marking code changed.

Product data sheet Rev. 03 — 1 September 2004 11 of 13

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Philips Semiconductors

10. Data sheet status

BFR520

NPN 9 GHz wideband transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation Thisdata sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice,in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

12. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makesnorepresentations or warrantiesthatthese products are free from patent, copyright, or mask workright infringement, unless otherwise speciﬁed.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 03 — 1 September 2004 12 of 13

Page 13

Philips Semiconductors

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 12

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information . . . . . . . . . . . . . . . . . . . . 12

BFR520

NPN 9 GHz wideband transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 1 September 2004

Document number: 9397 750 13397