Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
M3D173
BFR505T
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 2000 Mar 14
2000 May 17
Page 2
NXP Semiconductors Product specification
12
3
MBK090Top view
Fig.1 SOT416.
Marking code: N0.
NPN 9 GHz wideband transistor BFR505T
FEATURES
Low current consumption
High power gain
DESCRIPTION
NPN transistor in a plastic SOT416
(SC-75) package.
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) package.
PINNING
PIN DESCRIPTION
1 base
2emitter
3 collector
APPLICATIONS
Low power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
f
T
G
UM
F noise figure I
collector-base voltage open emitter 20 V
collector-emitter voltage RBE=0 15 V
DC collector current 18 mA
total power dissipation Ts 75 C; note 1 150 mW
DC current gain IC=5mA; VCE=6V; Tj=25C 60 120 250
transition frequency IC=5mA; VCE=6V; f=1GHz;
=25C
T
amb
maximum unilateral power gain IC=5mA; VCE=6V; f=900MHz;
=25C
T
amb
= 1.25 mA; VCE=6V;
C
f = 900 MHz; T
amb
=25C
9 GHz
17 dB
1.2 1.7 dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134) .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CE
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
2000 May 17 2
collector-base voltage open emitter 20 V
collector-emitter voltage RBE=0 15 V
emitter-base voltage open collector 2.5 V
DC collector current 18 mA
total power dissipation Ts 75 C; note 1 150 mW
storage temperature 65 +150 C
junction temperature 150 C
is the temperature at the soldering point of the collector pin.
s
Page 3
NXP Semiconductors Product specification
0 50 100 200
100
0
MGU068
150
P
tot
(mW)
Ts (°C)
150
200
50
Fig.2 Power derating curve.
NPN 9 GHz wideband transistor BFR505T
THERMAL RESISTANCE
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 500 K/W
2000 May 17 3
Page 4
NXP Semiconductors Product specification
G
UM
10 log
S
21
2
1S
11
2
–1S
22
2
–
----------------------------------------------------------
dB=
NPN 9 GHz wideband transistor BFR505T
CHARACTERISTICS
T
=25C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
S
21
F noise figure
P
L1
ITO third-order intercept point note 2 10 dBm
collector cut-off current IE=0; VCB=6V 50 nA
DC current gain IC=5mA; VCE= 6 V 60 120 250
collector capacitance IE=ie=0; VCB=6V; f=1MHz 0.4 pF
emitter capacitance IC=ic=0; VEB= 0.5 V; f = 1 MHz 0.4 pF
feedback capacitance IC=0; VCB=6V; f=1MHz 0.3 pF
transition frequency IC=5mA; VCE=6V; f=1GHz;
=25C
T
amb
maximum unilateral power gain;
note 1
IC=5mA; VCE=6V; T
amb
=25C;
f = 900 MHz 17 dB
9 GHz
f=2GHz 10 dB
2
insertion power gain IC=5mA; VCE= 6 V; f = 900 MHz;
=25C
T
amb
=
; IC= 1.25 mA; VCE=6V;
s
opt
amb
=25C
amb
=25C
amb
=25C
=25C
amb
output power at 1 dB gain
compression
f=900MHz; T
=
; IC=5mA; VCE=6V;
s
opt
f=900MHz; T
=
; IC= 1.25 mA; VCE=6V;
s
opt
f=2GHz; T
IC=5mA; VCE=6V; RL=50;
f=900MHz; T
13 14 dB
1.2 1.7 dB
1.6 2.1 dB
1.9 dB
4 dBm
Notes
1. G
2. I
is the maximum unilateral power gain, assuming S12is zero and
UM
=5mA; VCE=6V; RL=50; f = 900 MHz; T
C
= 898 MHz and at f
f
(2p-q)
=904MHz.
(2q-p)
=25C; fp=900MHz; fq= 902 MHz; measured at
amb
2000 May 17 4
Page 5
NXP Semiconductors Product specification
handbook, halfpage
MRC019
0
50
100
150
200
10
−1
10
−2
10
−3
11010
2
IC(mA)
h
FE
Fig.3 DC current gain as a function of collector
current.
VCE=6V; Tj=25C.
handbook, halfpage
MRC011
0
0.1
0.2
0.3
0.4
0.5
0246810
V (V)
CB
C
re
(pF)
Fig.4 Feedback capacitance as a function of
collector-base voltage.
IC=0; f=1MHz.
handbook, halfpage
MRC013
0
2
4
6
8
10
12
10
−1
11010
2
f
T
(GHz)
IC(mA)
3 V
= 8 V
CE
V
Fig.5 Transition frequency as a function of
collector current.
f=1GHz; T
amb
=25C.
NPN 9 GHz wideband transistor BFR505T
2000 May 17 5
Page 6
NXP Semiconductors Product specification
handbook, halfpage
MRC016
0
5
10
15
20
25
02468
MSG
G
UM
gain
(dB)
IC(mA)
Fig.6 Gain as a function of collector current.
VCE= 6 V; f = 900 MHz; T
amb
=25C.
handbook, halfpage
MRC017
0
5
10
15
20
02468
MSG
G
UM
G
max
gain
(dB)
IC(mA)
Fig.7 Gain as a function of collector current.
VCE=6V; f=2GHz; T
amb
=25C.
handbook, halfpage
MRC015
0
10
20
30
40
50
10
−2
10
−1
110
f (GHz)
MSG
G
UM
G
max
gain
(dB)
Fig.8 Gain as a function of frequency.
IC= 1.25 mA; VCE=6V; T
amb
=25C.
handbook, halfpage
MRC014
0
10
20
30
40
50
10
−1
10
−2
110
f (GHz)
MSG
G
UM
G
max
gain
(dB)
Fig.9 Gain as a function of frequency.
IC=5mA; VCE=6V; T
amb
=25C.
NPN 9 GHz wideband transistor BFR505T
In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG = maximum stable gain; G
gain.
= maximum available
max
2000 May 17 6
Page 7
NXP Semiconductors Product specification
handbook, halfpage
MRC018
0
1
2
3
4
10
−1
110
IC(mA)
F
(dB)
500 MHz
900 MHz
f = 2 GHz
Fig.10 Minimum noise figure as a function of
collector current.
VCE=6V; T
amb
=25C.
handbook, halfpage
MRC012
0
1
2
3
4
10
−1
110
F
(dB)
1.25 mA
f (GHz)
I = 5 mA
C
Fig.11 Minimum noise figure as a function of
frequency.
VCE=6V; T
amb
=25C.
handbook, full pagewidth
MRC073
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2
stability
circle
pot. unst.
region
0.5 1 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
F = 3 dB
F = 2 dB
2
F
min
= 1. 2 dB
F = 1.5 dB
Γ
OPT
Fig.12 Noise circle.
IC= 1.25 mA; VCE=6V;
f=900MHz; Z
o
=50.
NPN 9 GHz wideband transistor BFR505T
2000 May 17 7
Page 8
NXP Semiconductors Product specification
handbook, full pagewidth
MRC074
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
F = 3 dB
F = 4 dB
2
F
min
= 1.9 dB
Γ
OPT
F = 2.5 dB
Fig.13 Noise circle.
IC= 1.25 mA; VCE=6V;
f=2GHz; Z
o
=50.
handbook, full pagewidth
MRC056
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
Fig.14 Common emitter input reflection coefficient (S11).
IC=5mA; VCE=6V;
Z
o
=50.
NPN 9 GHz wideband transistor BFR505T
2000 May 17 8
Page 9
NXP Semiconductors Product specification
handbook, full pagewidth
MRC057
15 12 9 6 3
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
Fig.15 Common emitter forward transmission coefficient (S21).
IC=5mA; VCE=6V.
handbook, full pagewidth
MRC058
0.5 0.4 0.3 0.2 0.1
180°
−90°
−135°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
Fig.16 Common emitter reverse transmission coefficient (S12).
IC=5mA; VCE=6V.
NPN 9 GHz wideband transistor BFR505T
2000 May 17 9
Page 10
NXP Semiconductors Product specification
handbook, full pagewidth
MRC059
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
Fig.17 Common emitter output reflection coefficient (S22).
IC=5mA; VCE=6V;
Z
o
=50.
NPN 9 GHz wideband transistor BFR505T
2000 May 17 10
Page 11
NXP Semiconductors Product specification
UNIT
A
1
max
b
p
cD
E
e1H
E
L
p
Qw
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
0.5
e
1
1.75
1.45
0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
SOT416 SC-75
w M
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
AB
B
v M
A
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface-mounted package; 3 leads SOT416
04-11-04
06-03-16
NPN 9 GHz wideband transistor BFR505T
PACKAGE OUTLINE
2000 May 17 11
Page 12
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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In no event shall NXP Semiconductors be liable for any
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aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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accepts no liability for inclusion and/or use of NXP
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Applications Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
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design and operating safeguards to minimize the ris ks
associated with their applications and products.
2000 May 17 12
Page 13
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505T
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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Semiconductors products are sold subject to the general
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Quick reference data The Quick reference data is an
extract of the product data given in t he Limiting values and
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not complete, exhaustive or legally binding.
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In the event that customer uses the product for design-in
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Semiconductors’ product specifications.
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2000 May 17 13
Page 14
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Printed in The Netherlands R77/03/pp14 Dat e of release: 2000 May 17
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