Philips bfr505 Datasheet

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BFR505

NPN 9 GHz wideband transistor

Rev. 03 — 20 July 2004 Product data sheet

1. Product proﬁle

1.1 General description

The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV).

The transistor is encapsulated in a plastic SOT23 envelope.

1.2 Features

■ High power gain

■ Low noise ﬁgure

■ High transition frequency

■ Gold metallization ensures excellent reliability.

1.3 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

h C

f G

S

CBO

CES

tot

collector-base voltage

collector-emitter voltage

DC collector current

total power dissipation

DC current gain IC = 5 mA; VCE = 6 V 60 120 250 feedback

capacitance transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz - 9 - GHz maximum unilateral

power gain



insertion power gain

open emitter - - 20 V

RBE = 0 Ω --15V

--18mA

up to Ts = 135 °C

IC = ic = 0 A; VCB = 6 V; f = 1 MHz - 0.3 - pF

IC = 5 mA; VCE = 6 V; T

= 25 °C; f = 900 MHz

amb

= 5 mA; VCE = 6 V;

= 25 °C; f = 2 GHz

amb

IC = 5 mA; VCE = 6 V; T

= 25 °C; f = 900 MHz

amb

[1]

- - 150 mW

-17-dB

-10-dB

13 14 - dB

Page 2

Philips Semiconductors

BFR505

NPN 9 GHz wideband transistor

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

F noise ﬁgure Γs = Γ

[1] Ts is the temperature at the soldering point of the collector tab.

2. Pinning information

Table 2: Discrete pinning

Pin Description Simpliﬁed outline Symbol

1 base 2 emitter 3 collector

…continued

; IC = 1.25 mA; VCE = 6 V;

opt

= 25 °C; f = 900 MHz

amb

= Γ

; IC = 5 mA; VCE = 6 V;

opt

= 25 °C; f = 900 MHz

amb

= Γ

; IC = 1.25 mA; VCE = 6 V;

opt

= 25 °C; f = 2 GHz

amb

- 1.2 1.7 dB

- 1.6 2.1 dB

- 1.9 - dB

SOT23

sym021

3. Ordering information

Table 3: Ordering information

Type number Package

BFR505 - plastic surface mounted package; 3 leads SOT23

4. Marking

Table 4: Marking table

Type number Marking code

BFR505 31*

[1] * = p: made in Hong Kong.

* = t: made in Malaysia. * = W: made in China.

Name Description Version

[1]

Product data sheet Rev. 03 — 20 July 2004 2 of 13

Page 3

Philips Semiconductors

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CES

EBO

tot

stg

[1] Ts is the temperature at the soldering point of the collector tab.

collector-base voltage open emitter - 20 V collector-emitter voltage RBE = 0 Ω -15V emitter-base voltage - 2.5 V DC collector current continuous - 18 mA total power dissipation up to Ts = 135 °C storage temperature −65 +150 °C junction temperature - 175 °C

6. Thermal characteristics

BFR505

NPN 9 GHz wideband transistor

[1]

- 150 mW

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-s)

[1] Ts is the temperature at the soldering point of the collector tab.

7. Characteristics

Table 7: Characteristics

Tj = 25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

CBO

S

from junction to soldering point

[1]

260 K/W

collector cut-off current IE = 0 A; VCB = 6 V - - 50 nA DC current gain IC = 5 mA; VCE = 6 V 60 120 250 emitter capacitance IC = ic = 0 A; VEB = 0.5 V;

- 0.4 - pF

f = 1 MHz

collector capacitance IE = ie = 0 A; VCB = 6 V;

- 0.4 - pF

f = 1 MHz

feedback capacitance IC = ic = 0 A; VCB = 6 V;

- 0.3 - pF

f = 1 MHz

transition frequency IC = 5 mA; VCE = 6 V;

- 9 - GHz

f=1GHz

maximum unilateral power gain



insertion power gain IC = 5 mA; VCE = 6 V;

IC = 5 mA; VCE = 6 V; T

= 25 °C; f = 900 MHz

amb

= 5 mA; VCE = 6 V;

= 25 °C; f = 2 GHz

amb

= 25 °C; f = 900 MHz

amb

[1]

-17-dB

-10-dB

13 14 - dB

Product data sheet Rev. 03 — 20 July 2004 3 of 13

Page 4

Philips Semiconductors

BFR505

NPN 9 GHz wideband transistor

Table 7: Characteristics

…continued

Tj = 25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

F noise ﬁgure Γs = Γ

= 6 V;T

; IC = 5 mA;

opt

amb

- 1.2 1.7 dB

= 25 °C;

f = 900 MHz

- 1.6 2.1 dB

- 1.9 - dB

- 4 - dBm

[2]

- 10 - dBm

output power at 1 dB gain compression

ITO third order intercept

= Γ

V T

; IC = 5 mA;

opt

= 6 V;

= 25 °C; f = 900 MHz

amb

= Γ

; IC = 5 mA;

opt

= 6 V;

= 25 °C; f = 2 GHz

amb

IC = 5 mA; VCE = 6 V; R

= 50 Ω;

= 25 °C; f = 900 MHz

amb

point

[1] GUM is the maximum unilateral power gain, assuming S12 is zero and

–()1S

–()

amb

dB=

=25°C; fp= 900 MHz; fq= 902 MHz; measured at f

(2p−q)

= 898 MHz

[2] I

and f

10 log

------------------------------------------------------

= 5mA; VCE=6V;RL=50Ω;T

= 904 MHz.

(2q−p)

200

tot

(mW)

150

100

0 20015050 100

mra718

Ts (°C)

250

200

150

100

−3

−2

−1

110

mra719

(mA)

1010

VCE = 6 V.

Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector

current.

Product data sheet Rev. 03 — 20 July 2004 4 of 13

Page 5

Philips Semiconductors

BFR505

NPN 9 GHz wideband transistor

mra720

VCB (V)

(pF)

0.4

0.3

0.2

0.1

0108462

IC = 0 A; f = 1 MHz. T

Fig 3. Feedback capacitance as a function of

collector-base voltage.

gain (dB)

mra764

(1) (2)

(mA)

mra721

(GHz)

−1

= 25 °C; f = 1 GHz.

amb

(1)

(2)

101

(1) VCE= 6 V. (2) VCE=3V.

Fig 4. Transition frequency as a function of collector

current.

gain (dB)

mra765

01284

VCE = 6 V; f = 900 MHz. (1) MSG. (2) GUM.

IC (mA)

(1) MSG. (2) G

(1) (2)

01284

VCE = 6 V; f = 2 GHz.

max

(3)

IC (mA)

(3) GUM.

Fig 5. Gain as a function of collector current. Fig 6. Gain as a function of collector current.

Product data sheet Rev. 03 — 20 July 2004 5 of 13

Page 6

Philips Semiconductors

BFR505

NPN 9 GHz wideband transistor

(3)

f (MHz)

mra766

gain (dB)

10 10

(1)

(2)

f (MHz)

VCE = 6 V; IC = 5 mA. (1) GUM. (2) MSG. (3) G

max

gain (dB)

10 10

(1)

(2)

VCE = 6 V; IC = 1.25 mA. (1) GUM. (2) MSG. (3) G

max

Fig 7. Gain as a function of frequency. Fig 8. Gain as a function of frequency.

mra726

ass

(dB)

(1) (2)

min

(dB)

(1)

(2)

ass

min

(dB)

mra767

(3)

mra727

ass

(dB)

−1

VCE = 6 V. (1) f = 900 MHz. (2) f = 1000 MHz. (3) f = 2000 MHz. (4) f = 2000 MHz.

ass

(6) (7)

min

(mA)

(3) (4)

(5)

−5

1010

(3)

(4)

min

f (MHz)

VCE = 6 V. (1) IC = 5 mA. (2) IC = 1.25 mA. (3) IC = 5 mA. (4) IC = 1.25 mA.

−5

(5) f = 1000 MHz. (6) f = 900 MHz. (7) f = 500 MHz.

Fig 9. Minimum noise ﬁgure and associated available

gain as functions of collector current.

Fig 10. Minimum noise ﬁgure and associated available

gain as functions of frequency.

Product data sheet Rev. 03 — 20 July 2004 6 of 13

Page 7

Philips Semiconductors

BFR505

NPN 9 GHz wideband transistor

stability circle

180°

+0.2

−0.2

Zo = 50 Ω. VCE = 6 V; IC = 5 mA; f = 900 MHz.

Fig 11. Noise circle ﬁgure.

pot. unst. region

+0.5

−0.5

90° +1

45°135°

= 1.3 dB

min

opt

−2

−5

−45°−135°

mra728

0.50.2

F = 3 dB

−1

−90°

F = 1.5 dB

F = 2 dB

1.0

0.8

0.6

0.4

0.2

0°

1.0

pot. unst. region

180°

+0.2

−0.2

stability circle

Zo = 50 Ω. VCE = 6 V; IC = 5 mA; f = 2000 MHz.

Fig 12. Noise circle ﬁgure.

+0.5

−0.5

0.50.2 F = 3 dB

F = 4 dB

−90°

90° +1

F = 2.5 dB

−1

= 1.9 dB

min

1.0

45°135°

opt

−2

−5

−45°−135°

mra729

0.8

0.6

0.4

0.2

0°

1.0

Product data sheet Rev. 03 — 20 July 2004 7 of 13

Page 8

Philips Semiconductors

BFR505

NPN 9 GHz wideband transistor

90° +1

+0.5

+0.2

180°

−0.2

0.50.2

−0.5

3 GHz

−1

−90°

Zo = 50 Ω. VCE = 6 V; IC = 5 mA.

Fig 13. Common emitter input reﬂection coefﬁcient (S11).

−2

45°135°

40 MHz

−45°−135°

−5

mra722

1.0

0.8

0.6

0.4

0.2

0°

1.0

90°

15 12 9 6 3

180°

40 MHz

3 GHz

−90°

VCE = 6 V; IC = 5 mA.

Fig 14. Common emitter forward transmission coefﬁcient (S21).

45°135°

0°

−45°−135°

mra723

Product data sheet Rev. 03 — 20 July 2004 8 of 13

Page 9

Philips Semiconductors

BFR505

NPN 9 GHz wideband transistor

90°

45°135°

3 GHz

0.5 0.4 0.3 0.2 0.1 40 MHz

180°

−90°

VCE = 6 V; IC = 5 mA.

Fig 15. Common emitter reverse transmission coefﬁcient (S12).

90° +1

180°

+0.5

+0.2

0.50.2

−45°−135°

45°135°

40 MHz

mra724

0°

1.0

0.8

0.6

0.4

0.2

0°

−2

−5

−45°−135°

1.0

mra725

−0.2

3 GHz

−0.5

−1

−90°

Zo = 50 Ω. VCE = 6 V; IC = 5 mA.

Fig 16. Common emitter output reﬂection coefﬁcient (S22).

Product data sheet Rev. 03 — 20 July 2004 9 of 13

Page 10

Philips Semiconductors

BFR505

NPN 9 GHz wideband transistor

8. Package outline

Plastic surface mounted package; 3 leads SOT23

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

1.1

0.9

max.

0.48

0.1

0.38

0.15

0.09

IEC JEDEC EIAJ

3.0

2.8

1.4

1.2

REFERENCES

1.9

0.95

2.5

2.1

Qwv

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28 99-09-13

UNIT

OUTLINE

VERSION

SOT23 TO-236AB

Fig 17. Package outline.

Product data sheet Rev. 03 — 20 July 2004 10 of 13

Page 11

Philips Semiconductors

NPN 9 GHz wideband transistor

BFR505

9. Revision history

Table 8: Revision history

Document ID Release date Data sheet status Change notice Order number Supersedes

BFR505_3 20040720 Product data 9397 750 13396 BFR505_CNV_2 Modiﬁcations:

BFR505_CNV_2 19971204 Product speciﬁcation - - -

• Marking code added Table4.

• Data sheet updated to latest standards.

Product data sheet Rev. 03 — 20 July 2004 11 of 13

Page 12

Philips Semiconductors

10. Data sheet status

BFR505

NPN 9 GHz wideband transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains datafrom the preliminary speciﬁcation. Supplementary datawill be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representationor warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date.Philips Semiconductorsreserves the right tochange thespeciﬁcation withoutnotice, in order to improve the design and supply the best possible product.

right to makechanges atany time in order toimprove the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

12. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or maskwork right infringement, unless otherwise speciﬁed.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 03 — 20 July 2004 12 of 13

Page 13

Philips Semiconductors

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 12

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information . . . . . . . . . . . . . . . . . . . . 12

BFR505

NPN 9 GHz wideband transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part ofany quotationor contract, is believed to be accurateand reliableand may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Document order number: 9397 750 13396

Published in The Netherlands

Date of release: 20 July 2004