Philips bfr30-bfr31 Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

BFR30; BFR31

N-channel field-effect transistors

Product specification
Supersedes data of April 1991

1997 Dec 05

NXP Semiconductors Product specification

Fig.1 Simplified outline and symbol.

Marking codes:

BFR30: M1p.
BFR31: M2p.

handbook, halfpage

12

g

d
s

3

Top view

MAM385

N-channel field-effect transistors BFR30; BFR31

DESCRIPTION

Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.

APPLICATIONS

 Low level general purpose amplifiers in thick and

thin-film circuits.

PINNING - SOT23

PIN SYMBOL DESCRIPTION

1 d drain
2 s source
3ggate

Note

1. Drain and source are interchangeab le.

(1)

(1)

CAUTION

This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
P
I

DSS

DS
GSO
tot

drain-source voltage 25 V
gate-source voltage open drain 25 V
total power dissipation T

 40 C  250 mW

amb

drain current VGS=0; VDS=10V

BFR30 4 10 mA
BFR31 1 5 mA

y

 common-source transfer admittance ID=1mA; VDS=10V; f=1kHz

fs

BFR30 1 4 mS
BFR31 1.5 4.5 mS

1997 Dec 05 2

NXP Semiconductors Product specification

Fig.2 Power derating curve.

handbook, halfpage

0

T

amb

(°C)

P

tot

(mW)

300

200

100

0

40 200

80 120 160

MDA245

N-channel field-effect transistors BFR30; BFR31

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DGO

V

GSO

I

D

I

G

P

tot

T

stg

T

j

Note

1. Mounted on a ceramic substrate of 8  10  0.7 mm.

drain-source voltage 25 V
drain-gate voltage open source 25 V
gate-source voltage open drain 25 V
drain current  10 mA
forward gate current (DC)  5mA
total power dissipation T

 40 C; note 1; see Fig.2  250 mW

amb

storage temperature 65 +150 C
operating junction temperature  150 C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 430 K/W

Note

1. Mounted on a ceramic substrate of 8  10  0.7 mm.

1997 Dec 05 3

NXP Semiconductors Product specification

N-channel field-effect transistors BFR30; BFR31

CHARACTERISTICS

T

=25C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

GSS

I

DSS

V

GS

V

GS

V

GSoff

 common-source transfer admittance ID=1mA; VDS=10V; f=1kHz;

y

fs

 common-source transfer admittance ID=200A; VDS=10V; f=1kHz;

y

fs

 common source output admittance ID=1mA; VDS=10V; f=1kHz

y

os

 common source output admittance ID=200A; VDS=10V; f=1kHz

y

os

C

is

C

rs

V

n

gate cut-off current VDS=0; VGS= 10 V 0.2 nA
drain current VGS=0; VDS=10V

BFR30 4 10 mA
BFR31 1 5 mA

gate-source voltage ID=1mA; VDS=10V

BFR30 0.7 3V
BFR31 0 1.3 V

gate-source voltage ID=50A; VDS=10V

BFR30 4V
BFR31 2V

gate-source cut-off voltage ID=0.5nA; VDS=10V

BFR30 5V
BFR31 2.5 V

=25C

T

BFR30 1 4 mS

amb

BFR31 1.5 4.5 mS

T

=25C

BFR30 0.5  mS

amb

BFR31 0.75  mS

BFR30  40 S
BFR31  25 S

BFR30  20 S
BFR31  15 S

input capacitance VDS=10V; f=1MHz

=1mA  4pF

I

D

=0.2nA  4pF

I

D

feedback capacitance VDS=10V; f=1MHz; T

I

=1mA  1.5 pF

D

=200A  1.5 pF

I

D

equivalent input noise voltage ID=200A; VDS=10V;

amb

=25C

 0.5 V

B=0.6to100Hz

1997 Dec 05 4

NXP Semiconductors Product specification

Fig.3 Input characteristics.

BFR30.

VDS=10V; Tj=25C.

handbook, halfpage

−4

10

8

2

6

4

0

−3 −20

max

typ

min

VGS (V)

I

D

(mA)

−1

MDA657

Fig.4 Output characteristics; typical values.

BFR30.

Tj=25C.

handbook, halfpage

010

10

0

2

4

6

8

2468

MDA658

VDS (V)

I

D

(mA)

V

GS

= 0 V

−0.5

−1.0

−1.5

−2.0

Fig.5 Input characteristics.

BFR31.

VDS=10V; Tj=25C.

handbook, halfpage

−50

5

0

1

2

3

4

−4 −3 −2 −1

MDA659

max

typ

min

VGS (V)

I

D

(mA)

Fig.6 Output characteristics; typical values.

BFR31.

Tj=25C.

handbook, halfpage

010

5

0

1

2

3

4

2468

MDA660

VDS (V)

I

D

(mA)

V

GS

= 0 V

−0.2

−0.4

−0.6

−0.8

−1

−1.2

N-channel field-effect transistors BFR30; BFR31

1997 Dec 05 5

NXP Semiconductors Product specification

Fig.7 Drain current as a function of junction

temperature; typical values.

BFR30.

VDS=10V.

handbook, halfpage

25 50 75 125

I

D

(mA)

6

4

2

0

100

MDA661

Tj (°C)

V

GS

= 0 V

−0.5

−1.0

−1.5

−2.0

Fig.8 Drain current as a function of junction

temperature; typical values.

BFR31.

VDS=10V.

handbook, halfpage

−1

−1.2

25 50 75 125

I

D

(mA)

6

4

2

0

100

MDA662

Tj (°C)

−0.2

−0.4

−0.6

−0.8

V

GS

=

0 V

Fig.9 Gate cut-off current as a function of junction

temperature; typical values.

VGS= 10 V; VDS=0.

handbook, halfpage

20010050

I

GSS
(nA)

0 150

Tj (°C)

10

1

10

−1

10

−2

10

−3

MDA656

Fig.10 Gate-source cut-off voltage as a function of

drain current; typical values.

ID= 0.5 nA; VDS=10V; VGS=0; Tj=25C.

handbook, halfpage

010

−6

0

−2

−4

2

I

DSS

(mA)

V

GS(off)

(V)

468

MDA663

BFR31

BFR30

N-channel field-effect transistors BFR30; BFR31

1997 Dec 05 6

NXP Semiconductors Product specification

Fig.11 Common source transfer admittance as a

function of drain current; typical values.

VDS=10V; f=1kHz; T

amb

=25C.

handbook, halfpage

0

7.5

5

2.5

0

2

ID (mA)

46

MDA664

y

fs

(mA/V)

BFR30

BFR31

Fig.12 Common source output admittance as a

function of drain current; typical values.

VDS=10V; f=1kHz; T

amb

=25C.

handbook, halfpage

0

75

50

25

0

2

ID (mA)

46

BFR30

BFR31

MDA665

y

os

(μA/V)

Fig.13 Common source output admittance as a

function of drain-source voltage;
typical values.

f=1kHz; T

amb

=25C.

(1) ID=4mA. (2) ID=1mA.

handbook, halfpage

30

(2)

BFR30
BFR31

01020

VDS (V)

10

4

10

3

10

2

10

MDA666

|y

os

|

(μA/V)

(1)

Fig.14 Input capacitanc e as a function of

gate-source voltage; typical values.

VDS=10V; f=1MHz; T

amb

=25C.

handbook, halfpage

0 −5

5

0

1

2

3

4

−1 −2 −3

C

is

(pF)

VGS (V)

−4

MDA667

N-channel field-effect transistors BFR30; BFR31

1997 Dec 05 7

NXP Semiconductors Product specification

Fig.15 Feedb ack capacitance as a function of

gate-source voltage; typical values.

VDS=10V; f=1MHz; T

amb

=25C.

handbook, halfpage

0 −5

−1

0

−0.2

−0.4

−0.6

−0.8

−1 −2 −3

C

rs

(pF)

VGS (V)

−4

MDA668

Fig.16 Equivalent noise voltage source as a function of frequency; typical values.

VDS=10V; T

amb

=25C.
(1) BFR31; ID=1mA.
(2) BFR30; ID=4mA.

handbook, full pagewidth

10

4

10

3

10

2

10

1

10 10

2

10

3

10

4

f (Hz)

10

5

10

6

MDA669

(1)

(2)

e

n

(nV/ Hz)

N-channel field-effect transistors BFR30; BFR31

1997 Dec 05 8

NXP Semiconductors Product specification

Fig.17 Equivalent noise current source as a function of frequency; typical values.

handbook, full pagewidth

10

4

10

3

10

2

10

1

10 10

2

10

3

10

4

f (Hz)

10

5

10

6

MDA670

i

n

(fA/ Hz)

(1)

(2)

VDS=10V; T

amb

=25C.
(1) BFR31; ID=1mA.
(2) BFR30; ID=4mA.

N-channel field-effect transistors BFR30; BFR31

1997 Dec 05 9

NXP Semiconductors Product specification

UNIT

A

1

max.

b

p

cD

E

e

1

H

E

L

p

Qwv

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

IEC JEDEC JEITA

mm

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

0.95

e

1.9

2.5

2.1

0.55

0.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

b

p

D

e

1

e

A

A

1

L

p

Q

detail X

H

E

E

w M

v M

A

B

AB

0 1 2 mm

scale

A

1.1

0.9

c

X

12

3

Plastic surface-mounted package; 3 leads SOT23

N-channel field-effect transistors BFR30; BFR31

PACKAGE OUTLINE

1997 Dec 05 10

NXP Semiconductors Product specification

N-channel field-effect transistors BFR30; BFR31

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DEFINITIONS
Product specification  The information and data

provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.

DISCLAIMERS
Limited warranty and liability  Information in this

document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.

In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.

Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication he reof.

Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications wher e failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inc l usion and/or use is at
the customer’s own risk.

Applications  Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.

1997 Dec 05 11

NXP Semiconductors Product specification

N-channel field-effect transistors BFR30; BFR31

NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.

Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.

Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In cas e an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.

Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data  The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with auto motive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.

In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from cus tom er d esign and use o f
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.

No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights .

1997 Dec 05 12

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]

© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed t o b e a ccurate a nd reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property right s.

Printed in The Netherlands R77/02/pp13 Date of release: 1997 Dec 05