Philips bfq67 Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

M3D088

BFQ67

NPN 8 GHz wideband transistor

Product specification
Supersedes data of September 1995

1998 Aug 27

NXP Semiconductors Product specification

Fig.1 SOT23.

MSB003

Top view

12

3

Marking code: V2p.

NPN 8 GHz wideband transistor BFQ67

FEATURES

 High power gain
 Low noise figure

DESCRIPTION

Silicon NPN wideband transistor in a
plastic SOT23 package.

 High transition frequency
 Gold metallization ensures

excellent reliability.

PINNING

PIN DESCRIPTION

1base

APPLICATIONS

Satellite TV tuners and RF portable

2 emitter
3 collector

communications equipment up to
2GHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
h
f
G

CBO
CEO

C

tot
FE

T

UM

collector-base voltage open emitter 20 V
collector-emitter voltage open base 10 V
collector current (DC) 50 mA
total power dissipation Ts 97 C; note 1 300 mW
DC current gain IC=15mA; VCE=5V 60 100 
transition frequency IC=15mA; VCE=8V  8  GHz
maximum unilateral

IC=15mA; VCE=8V; f=1GHz  14  dB

power gain

F noise figure I

=5mA; VCE=8V; f=1GHz  1.3  dB

C

Note

is the temperature at the soldering point of the collector tab.

1. T

s

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134 ).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
P
T
T

CBO
CEO
EBO

C

tot
stg
j

collector-base voltage open emitter  20 V
collector-emitter voltage open base  10 V
emitter-base voltage open collector  2.5 V
collector current (DC)  50 mA
total power dissipation Ts 97 C; note 1  300 mW
storage temperature range 65 +150 C
junction temperature  175 C

Note

is the temperature at the soldering point of the collector tab.

1. T

s

1998 Aug 27 2

NXP Semiconductors Product specification

G

UM

10 log

S

21

2

1 S

11

2

–1 S

22

2

–

----------------------------------------------------------

dB=

NPN 8 GHz wideband transistor BFQ67

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

is the temperature at the soldering point of the collector lead.

1. T

s

CHARACTERISTICS

=25C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F noise figure 

thermal resistance from junction to soldering point note 1 260 K/W

collector cut-off current IE=0; VCB=5V 50 nA
DC current gain IC=15mA; VCE=5V 60 100 
collector capacitance IE=ie=0; VCB=8V; f=1MHz  0.7  pF
emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz  1.3  pF
feedback capacitance IC=0; VCB=8V; f=1MHz  0.5  pF
transition frequency IC=15mA; VCE=8V  8  GHz
maximum unilateral power gain

(note 1)

IC=15mA; VCE=8V;

=25C; f = 1 GHz

T

amb

I

=15mA; VCE=8V; f=2GHz  8  dB

C

= 

; IC=5mA; VCE=8V;

s

opt

=25C; f = 1 GHz

T

amb

= 



T



T
I

C

T



T
I

C

T

; IC=15mA; VCE=8V;

s

opt

=25C; f = 1 GHz

amb

= 

; IC=5mA; VCE=8V;

s

opt

=25C; f = 2 GHz

amb

=5mA; VCE=8V;

=25C; f = 2 GHz; Zs=60

amb

= 

; IC=15mA; VCE=8V;

s

opt

=25C; f = 2 GHz

amb

=15mA; VCE=8V;

=25C; f = 2 GHz; Zs=60

amb

 14  dB

 1.3  dB

 1.7  dB

 2.2  dB

 2.5  dB

 2.7  dB

 3  dB

Note

1. G

is the maximum unilateral power gain, assuming S12 is zero and .

UM

1998 Aug 27 3

NXP Semiconductors Product specification

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

400

300

100

0

200

150

MRA614

P

tot

(mW)

Ts (oC)

Fig.3 DC current gain as a function of collector

current, typical values.

VCE=5V.

handbook, halfpage

0

120

80

40

0

20 40

MBB301

60

I (mA)

C

FE

h

Fig.4 Feedback capacitance as a function of

collector-base voltage, typical values.

IC=ic=0; f=1MHz.

handbook, halfpage

0 5 10 15

VCB (V)

C

re

(pF)

0.8

0.6

0.2

0

0.4

MRA607

Fig.5 Transition frequency as a function of

collector current, typical values.

VCE=8V; T

amb

=25C; f = 2 GHz.

handbook, halfpage

01020 40

8

6

2

0

4

MBB303

30

I (mA)

C

(GHz)

T

f

10

NPN 8 GHz wideband transistor BFQ67

1998 Aug 27 4

NXP Semiconductors Product specification

Fig.6 Gain as a function of collector current,

typical values.

VCE=8 V; f=1GHz.

handbook, halfpage

010

IC (mA)

20 30

25

0

20

15

gain
(dB)

10

5

MRA611

MSG

G

UM

G

max

Fig.7 Gain as a function of frequency, typical

values.

VCE=8V; IC=5mA.

handbook, halfpage

50

gain
(dB)

0

10

MRA610

10

2

10

3

10

4

10

20

30

f (MHz)

40

MSG

G

UM

G

max

Fig.8 Gain as a function of frequency, typical

values.

VCE=8V; IC=15mA.

handbook, halfpage

50

gain
(dB)

0

10

MRA608

10

2

10

3

10

4

10

20

30

f (MHz)

40

G

max

G

UM

MSG

Fig.9 Gain as a function of frequency, typical

values.

VCE=8V; IC=30mA.

handbook, halfpage

50

gain
(dB)

0

10

MRA609

10

2

10

3

10

4

10

20

30

f (MHz)

40

G

max

G

UM

MSG

NPN 8 GHz wideband transistor BFQ67

1998 Aug 27 5

NXP Semiconductors Product specification

Fig.10 Minimum noise figure as a function of

collector current, typical values.

VCE=8V.

handbook, halfpage

4

2

1

0

100

MBB308

101

3

F

(dB)

I (mA)

C

f = 2 GHz

1 GHz
900 MHz
500 MHz

Fig.11 Noise figure as a function of collector

current, typical values.

VCE=6V; f=900MHz.

handbook, halfpage

5

0

1

2

3

F

(dB)

IC (mA)

4

MRA613

1

10

2

10

optimum

source

Z

S = 60 Ω

Fig.12 Minimum noise figure as a function of

frequency, typical values.

VCE=8V.

handbook, halfpage

4

2

1

0

MBB309

3

F

(dB)

f (MHz)

10

4

10

3

10

2

5 mA

I = 30 mA

C

15 mA

Fig.13 Minimum noise figure as a function of

frequency, typical values.

VCE=1V.

handbook, halfpage

5

0

1

2

3

F

(dB)

f (MHz)

4

MRA612

10

2

10

4

10

3

I

C = 0.5 mA

1 mA
2 mA

NPN 8 GHz wideband transistor BFQ67

1998 Aug 27 6

NXP Semiconductors Product specification

handbook, full pagewidth

MBC968

0.2

0.5

1

2

5

10

∞

0.2

0.5

1

2

5

10

0

+ j

− j

3 GHz

40 MHz

10.2 5210

Fig.14 Common emitter input reflection coefficient (S11), typical values.

VCE=8V; IC=15mA; Zo=50.

Fig.15 Common emitter forward transmission coefficient (S21), typical values.

VCE=8V; IC=15mA.

handbook, full pagewidth

MBC967

+ ϕ

− ϕ

0°

30°

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

0.2 0.1

3 GHz

40 MHz

NPN 8 GHz wideband transistor BFQ67

1998 Aug 27 7

NXP Semiconductors Product specification

Fig.16 Common emitter reverse transmission coeffic ient (S12), typical values.

VCE=8V; IC=15mA.

handbook, full pagewidth

MBC966

+ ϕ

− ϕ

0°

30

o

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

0.2 0.1

3 GHz

40 MHz

Fig.17 Common emitter output reflection coefficient (S22), typical values.

VCE=8V; IC=15mA; Zo=50.

handbook, full pagewidth

MBC965

0.2

0.5

1

2

5

10

∞

0.2

0.5

1

2

5

10

0

+ j

− j

3 GHz

0.2 0.5 1 1052

40 MHz

NPN 8 GHz wideband transistor BFQ67

1998 Aug 27 8

NXP Semiconductors Product specification

UNIT

A

1

max.

b

p

cD

E

e

1

H

E

L

p

Qwv

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

IEC JEDEC JEITA

mm

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

0.95

e

1.9

2.5

2.1

0.55

0.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

b

p

D

e

1

e

A

A

1

L

p

Q

detail X

H

E

E

w M

v M

A

B

AB

0 1 2 mm

scale

A

1.1

0.9

c

X

12

3

Plastic surface-mounted package; 3 leads SOT23

NPN 8 GHz wideband transistor BFQ67

PACKAGE OUTLINE

1998 Aug 27 9

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

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provided in a Product data sheet shall define the
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(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

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design and operating safeguards to minimize the ris ks
associated with their applications and products.

1998 Aug 27 10

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67

NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
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the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.

Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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1998 Aug 27 11

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Printed in The Netherlands R77/04/pp12 Date of release: 1998 Aug 27