Philips bfq540_n Datasheet

BFQ540

NPN wideband transistor

Rev. 04 — 25 September 2007 Product data sheet

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NXP Semiconductors

NXP Semiconductors Product specification

Rev. 04 - 25 September 2007

2 of 8

NPN wideband transistor BFQ540

FEATURES

• High gain

• High output voltage

DESCRIPTION

NPN wideband transistor inaSOT89
plastic package.

• Low noise

• Gold metallization ensures

excellent reliability

• Low thermal resistance.

PINNING

PIN DESCRIPTION

1 emitter

321

2 collector

APPLICATIONS

3 base

• VHF, UHF and CATV amplifiers.

Marking code: N4.

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

P

tot

h

FE

f

T

s

21

F noise figure I

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector-base voltage open collector −−2V
collector current (DC) −−120 mA
total power dissipation Ts≤ 60 °C; note 1 −−1.2 W
DC current gain IC= 40 mA; VCE=8V; Tj=25°C 100 120 250
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

T

=25°C

amb

insertion power gain I

2

= 40 mA; VCE=8V;

C

f = 900 MHz; T

= 40 mA; VCE=8V;

C

amb

f = 900 MHz; ΓS= Γ

=25°C

opt

− 9 − GHz

12 13 − dB

− 1.9 2.4 dB

Note

1. T

is the temperature at the soldering point of the collector pin.

s

NXP Semiconductors Product specification

Rev. 04 - 25 September 2007

3 of 8

NPN wideband transistor BFQ540

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2V
collector current (DC) − 120 mA
total power dissipation Ts≤ 60 °C − 1.2 W
storage temperature −65 +150 °C
operating junction temperature − 175 °C

thermal resistance from junction

Ts≤ 60 °C; P

= 1.2 W 95 K/W

tot

to soldering point

1.4

P

tot

(W)

1.2

1.0

0.8

0.6

0.4

0.2

0

0 50 100 200

VCE≤ 9V.

Fig.2 Power derating curve.

150

Tj (

MBG241

o

C)

3

10

handbook, halfpage

I

C

(mA)

2

10

10

1

10 10

Fig.3 SOAR.

VCE (V)

MBG244

2

NXP Semiconductors Product specification

Rev. 04 - 25 September 2007

4 of 8

NPN wideband transistor BFQ540

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

I

EBO

h

FE

f

T

C

e

C

re

s

21

V

o

d

2

F noise figure I

collector-base breakdown voltage open emitter; IC=10µA; IE=0 20 −−V
collector-emitter breakdown voltage RBE= 0; IC=40µA15−−V
emitter-base breakdown voltage IE= 100 µA; IC=0 2 −−V
collector-base leakage current VCB=8V; IE=0 −−50 nA
emitter-base leakage current VCB=1V; IC=0 −−200 nA
DC current gain IC= 40 mA; VCE= 8 V 100 120 250
transition frequency IC= 40 mA; VCE=8V;

− 9 − GHz

fm= 1 GHz
emitter capacitance IC=ie= 0; VEB= 0.5 V; f = 1 MHz − 2 − pF
feedback capacitance IC= 0; VCE=8V; f=1MHz − 0.9 − pF
insertion power gain I

2

= 40 mA; VCE=8V;

C

f = 900 MHz; T

amb

=25°C

12 13 − dB

output voltage note 1 − 500 − mV

note 2 − 350 − mV
second order intermodulation

note 3 −−−53 dB
distortion

= 40 mA; VCE=8V;

C

f = 900 MHz; ΓS= Γ

opt

− 1.9 2.4 dB

Notes

1. d

= −60 dB (DIN45004B); VCE= 8 V; IC= 40 mA; RL=50Ω;

im

Vp=Vo; Vq=Vo−6 dB; Vr=Vo−6 dB;
fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.5 MHz;
measured at fp+fq−fr= 793.25 MHz.

2. dim= −60 dB (DIN 45004B); IC= 40 mA; VCE= 8 V; RL=50Ω;
Vp=Vq=Vo; fp= 806 MHz; fq= 810 MHz;
measured at 2fp− fq= 802 MHz.

3. IC= 40 mA; VCE= 8 V; RL=50Ω;
Vp=Vq= 225 mV; fp= 250 MHz; fq= 560 MHz;
measured at fp+fq= 810 MHz.

NXP Semiconductors Product specification

Rev. 04 - 25 September 2007

5 of 8

NPN wideband transistor BFQ540

1.0

handbook, halfpage

C

re

(pF)

0.8

0.6

0.4

0.2

0

04812

IC= 0; f = 1 MHz.

VCB (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MRA688

12

handbook, halfpage

f

T

(GHz)

8

4

0

−1

10

f = 1 GHz; T

amb

11010

=25°C.

IC (mA)

Fig.5 Transition frequency as a function of

collector current; typical values.

MRA689

V

= 8V

CE

VCE = 4V

2

20

handbook, halfpage

d

im

(dB)

30

40

50

60

70

10 60

VCE= 8 V; Vo= 475 mV; RL=50Ω.
fp+fq−fr= 793.25 MHz; T

20 30 40 50

amb

=25°C.

MBG242

IC (mA)

Fig.6 Intermodulation distortion as a function of

collector current; typical values.

20

handbook, halfpage

d

2

(dB)

30

40

50

60

70

10 60

VCE= 8 V; Vo= 225 mV; RL=50Ω; fp+fq= 810 MHz;

=25°C.

T

amb

20 30 40 50

MBG243

IC (mA)

Fig.7 Second order intermodulation distortion as

a function of collector current; typical
values.

NXP Semiconductors Product specification

Rev. 04 - 25 September 2007

6 of 8

NPN wideband transistor BFQ540

PACKAGE OUTLINE

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89

w M

D

b

p3

123

b

p2

B

b

p1

e

1

e

B

A

E

L

p

H

E

c

DIMENSIONS (mm are the original dimensions)

UNIT

mm

OUTLINE
VERSION

SOT89 TO-243 SC-62

1.6

1.4

0 2 4 mm

scale

A

p1

0.48

0.35

p2

0.53

0.40

IEC JEDEC JEITA

1.8

1.4

p3

c

0.44

0.23

D

4.6

4.4

REFERENCES

b

b

b

2.6

2.4

e

3.0

e

1.5

H

1

E

4.25

3.75

E

L

1.2

0.8

w

p

0.13

EUROPEAN

PROJECTION

ISSUE DATE

06-03-16
06-08-29

NXP Semiconductors

Rev. 04 - 25 September 2007

7 of 8

Legal information

Data sheet status

BFQ540

NPN wideband transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document may havechanged since this document was published and maydiffer in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
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NXP Semiconductors

BFQ540

NPN wideband transistor

Revision history

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFQ540_N_4 20070925 Product data sheet - BFQ540_3
Modifications:
BFQ540_3

(9397 750 07064)
BFQ540_2

(9397 750 04296)
BFQ540_1 19950904 Product specification - -

• Fig. 1 and package outline updated

20000523 Product specification - BFQ540_2

19980827 Product specification - BFQ540_1

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 25 September 2007

Document identifier: BFQ540_N_4