Philips BFQ262 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ262; BFQ262A
NPN video transistors
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors Product specification
NPN video transistors BFQ262; BFQ262A
FEATURES
• High breakdown voltages
• Low output capacitance
DESCRIPTION
NPN video transistor in a SOT32
(TO-126) plastic package.
age
• Optimum temperature profile
• Good thermal stability
• Excellent reliability properties.
PINNING
PIN DESCRIPTION
1 emitter
APPLICATIONS
• Buffer/driver in high-resolution
colour graphics monitors.
2 collector
3 base
Top view
123
MBC077 - 1
Fig.1 Simplified outline
(SOT32; TO-126).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BFQ262 −−100 V
BFQ262A −−115 V
V
CER
collector-emitter voltage RBE= 100 Ω
BFQ262 −−95 V
BFQ262A −−110 V
I
C
P
tot
h
FE
collector current (DC) −−400 mA
total power dissipation Ts≤ 85 °C; note 1 −−5W
DC current gain IC= 100 mA; VCE=10V; T
amb
=25°C
BFQ262 50 60 −
BFQ262A 20 35 −
f
T
transition frequency IC= 100 mA; VCE= 10 V; f = 100 MHz;
T
=25°C
BFQ262 1 1.4 − GHz
amb
BFQ262A 0.8 1.2 − GHz
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1997 Oct 02 2
Philips Semiconductors Product specification
NPN video transistors BFQ262; BFQ262A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter
BFQ262 − 100 V
BFQ262A − 115 V
collector-emitter voltage open base
BFQ262 − 65 V
BFQ262A − 95 V
collector-emitter voltage RBE= 100 Ω
BFQ262 − 95 V
BFQ262A − 110 V
emitter-base voltage open collector − 3V
collector current (DC) − 400 mA
total power dissipation Ts≤ 85 °C; note 1; see Fig.3 − 5W
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 18 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1997 Oct 02 3
Philips Semiconductors Product specification
NPN video transistors BFQ262; BFQ262A
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
I
CBO
h
FE
f
T
C
cb
C
c
collector-base breakdown voltage IC= 0.1 mA; IE=0
BFQ262 100 −−V
BFQ262A 115 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0
BFQ262 65 −−V
BFQ262A 95 −−V
collector-emitter breakdown voltage IC= 10 mA; RBE= 100 Ω
BFQ262 95 −−V
BFQ262A 110 −−V
emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V
collector-emitter cut-off current IB= 0; VCE=50V −−100 µA
collector-base cut-off current IE= 0; VCB=50V −−20 µA
DC current gain IC= 100 mA; VCE=10V;
T
=25°C; see Fig.4
BFQ262 50 60 −
amb
BFQ262A 20 35 −
transition frequency IC= 100 mA; VCE=10V;
BFQ262 1 1.4 − GHz
BFQ262A 0.8 1.2 − GHz
f = 100 MHz; T
see Fig.6
collector-base capacitance IC=ic= 0; VCB=10V;
f = 1 MHz; T
amb
=25°C;
amb
=25°C;
− 2 − pF
see Fig.5
collector capacitance IE=ie= 0; VCB=10V;
− 3.5 − pF
f=1MHz
1997 Oct 02 4
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