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DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ255; BFQ255A
PNP video transistors
Product specification
Supersedes data November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
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Philips Semiconductors Product specification
PNP video transistors BFQ255; BFQ255A
FEATURES
• High breakdown voltages
• Low output capacitance
• High gain bandwidth
DESCRIPTION
PNP video transistor in a SOT128B
(TO-202) plastic package.
NPN complements: BFQ235 and
BFQ235A.
age
• Good thermal stability
• Gold metallization ensures
excellent reliability.
PINNING
PIN DESCRIPTION
APPLICATIONS
• Buffer/driver in high-resolution
colour graphics monitors.
1 emitter
2 collector
3 base
123
MGA323
Fig.1 Simplified outline
(SOT128B; TO-202).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BFQ255 −−−100 V
BFQ255A −−−115 V
V
CER
collector-emitter voltage RBE= 100 Ω
BFQ255 −−−95 V
BFQ255A −−−110 V
I
C
P
tot
h
FE
f
T
collector current (DC) −−−300 mA
total power dissipation Ts≤ 100 °C; note 1 −−3W
DC current gain IC= −50 mA; VCE= −10 V; T
=25°C20 30 −
amb
transition frequency IC= −50 mA; VCE= −10 V; f = 100 MHz;
T
=25°C
BFQ255 1 1.3 − GHz
amb
BFQ255A 0.8 1.2 − GHz
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1997 Oct 02 2
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Philips Semiconductors Product specification
PNP video transistors BFQ255; BFQ255A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter
BFQ255 −−100 V
BFQ255A −−115 V
collector-emitter voltage open base
BFQ255 −−65 V
BFQ255A −−95 V
collector-emitter voltage RBE= 100 Ω
BFQ255 −−95 V
BFQ255A −−110 V
emitter-base voltage open collector −−3V
collector current (DC) −−300 mA
total power dissipation Ts≤ 100 °C; note 1; see Fig.3 − 3W
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts≤ 100 °C; note 1 25 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1997 Oct 02 3