![](/html/61/6117/61173f4ad7db936452a880175f3119e9c2c3158aa64a7da94f913e80af28466f/bg1.png)
DISCRETE SEMICONDUCTORS
DATA SH EET
BFQ252; BFQ252A
PNP video transistors
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
![](/html/61/6117/61173f4ad7db936452a880175f3119e9c2c3158aa64a7da94f913e80af28466f/bg2.png)
Philips Semiconductors Product specification
PNP video transistors BFQ252; BFQ252A
FEATURES
• High breakdown voltages
• Low output capacitance
• Optimum temperature profile
DESCRIPTION
PNP video transistor in a SOT32
(TO-126) plastic package.
NPN complements: BFQ232 and
BFQ232A.
age
• Excellent reliability properties.
PINNING
APPLICATIONS
PIN DESCRIPTION
• Buffer/driver in high-resolution
colour graphics monitors.
1 emitter
2 collector
Top view
123
MBC077 - 1
3 base
Fig.1 Simplified outline
(SOT32; TO-126).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BFQ252 −−−100 V
BFQ252A −−−115 V
V
CER
collector-emitter voltage RBE= 100 Ω
BFQ252 −−−95 V
BFQ252A −−−110 V
I
C
P
tot
h
FE
f
T
collector current (DC) −−−300 mA
total power dissipation Ts≤ 115 °C; note 1 −−3W
DC current gain IC= −50 mA; VCE= −10 V; T
=25°C20 30 −
amb
transition frequency IC= −50 mA; VCE= −10 V; f = 100 MHz;
T
=25°C
BFQ252 1 1.3 − GHz
amb
BFQ252A 0.8 1.2 − GHz
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1997 Oct 02 2
![](/html/61/6117/61173f4ad7db936452a880175f3119e9c2c3158aa64a7da94f913e80af28466f/bg3.png)
Philips Semiconductors Product specification
PNP video transistors BFQ252; BFQ252A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter
BFQ252 −−100 V
BFQ252A −−115 V
collector-emitter voltage open base
BFQ252 −−65 V
BFQ252A −−95 V
collector-emitter voltage RBE= 100 Ω
BFQ252 −−95 V
BFQ2552A −−110 V
emitter-base voltage open collector −−3V
collector current (DC) −−300 mA
total power dissipation Ts≤ 115 °C; note 1; see Fig.3 − 3W
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts≤ 115 °C; note 1 20 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1997 Oct 02 3