Page 1
BFQ18A
NPN 4 GHz wideband transistor
Rev. 03 — 28 September 2007 Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
Page 2
NXP Semiconductors Product specification
Rev. 03 - 28 September 2007
2 of 7
NPN 4 GHz wideband transistor BFQ18A
DESCRIPTION
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PINNING
PIN DESCRIPTION
Code: FF
1 emitter
2 collector
3 base
321
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
P
f
CBO
CEO
C
tot
T
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
DC collector current − 150 mA
total power dissipation up to Ts = 155 °C (note 1) − 1W
transition frequency IC= 100 mA; VCE= 10 V;f= 500 MHz;
4 − GHz
Tj = 25 °C
C
re
d
im
feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz 1.2 − pF
intermodulation distortion IC= 80 mA; VCE= 10 V; RL=75Ω;
−−60 dB
Vo= 700 mV; measured at
f
= 793.25 MHz
(p+q-r)
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
CBO
CEO
EBO
C
tot
stg
j
collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
emitter-base voltage open collector − 2V
DC collector current − 150 mA
total power dissipation up to Ts= 155 °C (note 1) − 1W
storage temperature −65 150 °C
junction temperature − 175 °C
Note
1. T
is the temperature at the soldering point of the collector tab.
s
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NXP Semiconductors Product specification
Rev. 03 - 28 September 2007
3 of 7
NPN 4 GHz wideband transistor BFQ18A
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
= 25 °C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
h
FE
C
c
C
e
C
re
f
T
d
im
DC current gain IC = 100 mA; VCE = 10 V 25 −
collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2pF
emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 11 pF
feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz − 1.2 pF
transition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz − 4 GHz
intermodulation distortion (see Fig.2) note 1 −−60 dB
up to Ts = 155 °C (note 1) 20 K/W
Note
1. I
= 80 mA; VCE= 10 V; RL=75Ω;
c
Vp=Vo= 700 mV; fp=795.25 MHz;
Vq=Vo−6 dB; fq= 803.25 MHz;
Vr=Vo−6 dB; fr= 805.25 MHz;
measured at f
= 793.25 MHz.
(p+q-r)
Page 4
NXP Semiconductors Product specification
Rev. 03 - 28 September 2007
4 of 7
NPN 4 GHz wideband transistor BFQ18A
10 nF
DUT
5 µH
5 µH
1.5 nF
2.2 nF
0.68
pF
MBB829
handbook, halfpage
10 nF
f = 40 − 860 MHz.
0.68 pF
10 kΩ
4.7 nF
200 Ω
L1
2.2 nF
12 Ω
Fig.2 Intermodulation distortion MATV test circuit.
120
MBB361
I (mA)
C
120
handbook, halfpage
h
V
BB
V
CC
R
L
FE
80
40
0
0
VCE= 10 V; Tj=25°C.
40 80 160
Fig.3 DC current gain as a function of collector
current.
handbook, halfpage
8
f
T
(GHz)
6
4
2
0
0 40 80 160
VCE= 10 V; f = 500 MHz; Tj=25°C.
120
Fig.4 Transition frequency as a function of
collector current.
MBB357
I (mA)
C
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NXP Semiconductors Product specification
Rev. 03 - 28 September 2007
5 of 7
NPN 4 GHz wideband transistor BFQ18A
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89
w M
D
b
p3
123
b
p2
B
b
p1
e
1
e
B
A
E
L
p
H
E
c
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT89 TO-243 SC-62
1.6
1.4
0 2 4 mm
scale
A
b
p1
0.48
0.35
b
p2
0.53
0.40
IEC JEDEC JEITA
b
1.8
1.4
p3
c
0.44
0.23
D
E
4.6
2.6
4.4
2.4
REFERENCES
3.0
H
4.25
3.75
L
1.2
0.8
w
p
0.13
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
E
e
e
1
1.5
Page 6
NXP Semiconductors
Rev. 03 - 28 September 2007
6 of 7
Legal information
Data sheet status
BFQ18A
NPN 4 GHz wideband transistor
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The productstatus of device(s) described in this document may havechanged since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
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Product status
Definitions
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[3]
http://www.nxp.com.
Definition
malfunction of a NXP Semiconductors product can reasonably be expected to
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NXP Semiconductors accepts no liability for inclusion and/or use of NXP
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
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the device at these or any other conditions above those given in the
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Page 7
NXP Semiconductors
BFQ18A
NPN 4 GHz wideband transistor
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFQ18A_N_3 20070928 Product data sheet - BFQ18A_CNV_2
Modifications:
BFQ18A_CNV_2 19950901 Product specification - -
• Fig. 1 and package outline updated
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 September 2007
Document identifier: BFQ18A_N_3
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