Philips bfq149_n Datasheet

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BFQ149

PNP 5 GHz wideband transistor

Rev. 03 — 28 September 2007 Product data sheet

IMPORTANT NOTICE

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NXP Semiconductors

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NXP Semiconductors Product speciﬁcation

Rev. 03 - 28 September 2007

2 of 7

PNP 5 GHz wideband transistor BFQ149

DESCRIPTION

PNP transistor in aSOT89envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and inmicrowaveamplifierssuchasradar systems, spectrum analysers, etc.,

PINNING

PIN DESCRIPTION

Code: FG 1 emitter 2 collector 3 base

using SMD technology.

321

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V I P h f

CEO

tot

collector-emitter voltage open base −−−15 V DC collector current −−−100 mA total power dissipation up to Ts = 135 °C (note 1) −−1W DC current gain IC = −70 mA; VCE = −10 V; Tj = 25 °C20 50 − transition frequency IC = −75 mA; VCE = −10 V;

45− GHz

f = 500 MHz; Tj = 25 °C

F noise ﬁgure I

maximum unilateral power gain IC = −50 mA; VCE = −10 V;

f = 500 MHz; T

= −50 mA; VCE = −10 V;

amb

= 25 °C

− 12 − dB

− 3.75 − dB

Rs=60Ω; f = 500 MHz; T

= 25 °C

amb

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V V I I P T T

CBO CEO

EBO C CM

tot

stg j

collector-base voltage open emitter −−20 V collector-emitter voltage open base −−15 V emitter-base voltage open collector −−3V DC collector current −−100 mA peak collector current f > 1 MHz −−150 mA total power dissipation up to Ts= 135 °C (note 1) − 1W storage temperature −65 150 °C junction temperature − 150 °C

Note

1. Tsis the temperature at the soldering point of the collector tab.

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NXP Semiconductors Product speciﬁcation

Rev. 03 - 28 September 2007

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PNP 5 GHz wideband transistor BFQ149

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

th j-s

thermal resistance from junction to soldering point

Note

is the temperature at the soldering point of the collector tab.

1. T

CHARACTERISTICS

= 25 °C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CBO

h f

C C C G

collector cut-off current IE = 0; VCB = −10 V; −−100 nA DC current gain IC= −70 mA; VCE = −10 V 20 50 − transition frequency IC = −70 mA; VCE = −10 V;

collector capacitance IE= 0; VCB= −10 V; f = 1 MHz − 2 − pF emitter capacitance IC= 0; VEB= −0.5 V; f = 1 MHz − 4 − pF feedback capacitance IC = 0; VCE = −10 V; f = 1 MHz − 1.7 − pF maximum unilateral power gain

(note 1)

F noise ﬁgure I

up to Ts = 135 °C (note 1) 40 K/W

45− GHz

f = 500 MHz; T

IC = −50 mA; VCE = −10 V; f = 500 MHz; T

= −50 mA; VCE = −10 V;

amb

= 25 °C

− 12 − dB

= 25 °C

− 3.75 − dB Rs= 60 Ω; f = 500 MHz; T

= 25 °C

amb

Note

1. G G

is the maximum unilateral power gain, assuming S12 is zero and

--------------------------------------------------------------



–





–



dB.log=

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NXP Semiconductors Product speciﬁcation

Rev. 03 - 28 September 2007

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PNP 5 GHz wideband transistor BFQ149

handbook, halfpage

(pF)

020

IE= 0; f = 1 MHz; Tj=25°C.

(V)

Fig.2 Collector capacitance as a function of

collector-base voltage.

MEA328

handbook, halfpage

(GHz)

0 50 100

VCE= −10 V; f = 500 MHz; T

amb

=25°C.

I (mA)

Fig.3 Transition frequency as a function of

collector current.

MBB347

I (mA)

MBB345

handbook, halfpage

VCE= −10 V; Tj=25°C.

100 200

Fig.4 DC current gain as a function of collector

current.

handbook, halfpage

(dB)

Ic= −50 mA; VCE= −10 V; T

=25°C.

amb

f (MHz)

Fig.5 Maximum unilateral power gain as a

function of frequency.

MEA329

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NXP Semiconductors Product speciﬁcation

Rev. 03 - 28 September 2007

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PNP 5 GHz wideband transistor BFQ149

PACKAGE OUTLINE

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89

w M

123

DIMENSIONS (mm are the original dimensions)

UNIT

OUTLINE VERSION

SOT89 TO-243 SC-62

1.6

1.4

0 2 4 mm

scale

0.48

0.35

0.53

0.40

IEC JEDEC JEITA

2.6

2.4

3.0

0.44

0.23

4.6

4.4

REFERENCES

1.8

1.4

1.5

1.2

0.8

0.13

EUROPEAN

PROJECTION

ISSUE DATE

06-03-16 06-08-29

4.25

3.75

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NXP Semiconductors

Rev. 03 - 28 September 2007

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Legal information

Data sheet status

BFQ149

PNP 5 GHz wideband transistor

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] Theproductstatus of device(s) described in this document mayhave changed since this document was published and may differin case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title.A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

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reliable. However,NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

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[3]

http://www.nxp.com.

Deﬁnition

malfunction ofa NXP Semiconductors product canreasonably be expectedto result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

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http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

at intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.

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Contact information

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NXP Semiconductors

BFQ149

PNP 5 GHz wideband transistor

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFQ149_N_3 20070928 Product data sheet - BFQ149_CNV_2 Modiﬁcations: BFQ149_CNV_2 19950901 Product speciﬁcation - -

• Fig. 1 and package outline updated

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 28 September 2007

Document identifier: BFQ149_N_3