Philips bfm505 Datasheet

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Page 1

DATA SH EET

DISCRETE SEMICONDUCTORS

BFM505

Dual NPN wideband transistor

Product specification Supersedes data of 1995 Sep 04

1996 Oct 08

Page 2

NXP Semiconductors Product specification

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM210

Top view

Marking code: N0.

Dual NPN wideband transistor BFM505

FEATURES

 Small size  Temperature and h

matched

 Low noise and high gain  High gain at low current and low capacitance at low

voltage

 Gold metallization ensures excellent reliability.

APPLICATIONS

 Oscillator and buffer amplifiers  Balanced amplifiers  LNA/mixer.

DESCRIPTION

Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detector s, pagers and satellite TV-tuners.

PINNING - SOT363A

PIN SYMBOL DESCRIPTION

1b 2e 3c 4b 5e 6c

1 1 2 2 2 1

base 1 emitter 1 collector 2 base 2 emitter 2 collector 1

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Any single transistor

F noise figure I

th j-s

feedback capacitance Ie=0; VCB=3V; f=1MHz  0.22  pF transition frequency IC=5mA; VCE=3V; f=1GHz  9  GHz insertion power gain I

maximum unilateral power gain IC=5mA; VCE= 3 V; f = 900 MHz;

thermal resistance from junction to soldering point

=5mA; VCE= 3 V; f = 900 MHz;

=25C

amb

14 15  dB

 17  dB

=25C

amb

=1mA; VCE= 3 V; f = 900 MHz;

= 



opt

 1.1 1.6 dB

single loaded 230 K/W double loaded 115 K/W

1996 Oct 08 2

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NXP Semiconductors Product specification

Dual NPN wideband transistor BFM505

LIMITING VALUES

In accordance with the Absolute Maximum System IEC 134.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Any single transistor

CBO

CEO

EBO

tot

stg

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th j-s

collector-base voltage open emitter  20 V collector-emitter voltage open base  8V emitter-base voltage open collector  2.5 V DC collector current  18 mA total power dissipation up to Ts=118C; note 1  500 mW storage temperature 65 +175 C junction temperature  175 C

thermal resistance from junction to soldering point; note 1

single loaded 230 K/W double loaded 115 K/W

Note to the Limiting values and Thermal characteristics

1. T

is the temperature at the soldering point of the collector pin.

1996 Oct 08 3

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NXP Semiconductors Product specification

–1s

–

--------------------------------------------------------

dBlog=

Dual NPN wideband transistor BFM505

CHARACTERISTICS

=25C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC characteristics of any single transistor

(BR)CBO

(BR)CEO

(BR)EBO

CBO

DC characteristics of the dual transistor

h

V

BEO

AC characteristics of any single transistor

F noise figure I

collector-base breakdown volt a ge IC=2.5A; IE=0 20 V collector-emitter breakdown voltage IC=10A; IB=0 8 V emitter-base breakdown voltage IE=2.5A; IC=0 2.5 V collector-base leakage current VCB=6V; IE=0 50 nA DC current gain IC=5mA; VCE= 6 V 60 120 250

ratio of highest and lowest DC current gain

difference between highest and

IC1=IC2=5mA; V

CE1=VCE2

=6V

IE1=IE2=10mA; T

=25C0 1  mV

amb

11.2

lowest base-emitter voltage (offset voltage)

transition frequency IC=5mA; VCE=3V; f=1GHz  9  GHz collector capacitance IE=ie=0; VCB=3V;f=1MHz  0.31  pF feedback capacitance IC=0; VCB=3V;f=1MHz  0.22  pF maximum unilateral power gain;

note 1

insertion power gain I

IC=5mA; VCE=3V;

=25C; f = 900 MHz

amb

=5mA; VCE=3V;

=25C; f = 2 GHz

amb

=5mA; VCE=3V;

f=900MHz; T

=5mA; VCE=3V;

f=900MHz;  I

=5mA; VCE=3V;

f=2GHz; 

=1mA; VCE=3V;

f=900MHz; 

=25C

amb

= 

opt

= 

opt

= 

opt

 17  dB

 10  dB

14 15  dB

 1.4 1.8 dB

 1.9  dB

 1.1 1.6 dB

Note

1. G

is the maximum unilateral power gain, assuming s12 is zero.

1996 Oct 08 4

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NXP Semiconductors Product specification

Fig.2 Power derating as a function of soldering

point temperature; typical values.

handbook, halfpage

0 50 100 200

400

MBG208

150

600

200

tot

(mW)

Ts (

double loaded

single loaded

Fig.3 Transition frequency as a function of

collector current; typical values.

f=1GHz; T

amb

=25C.

handbook, halfpage

−1

101

(GHz)

IC (mA)

MGD687

VCE = 6V

3 V

Fig.4 DC current gain as a function of collector

current; typical values.

VCE=6V.

handbook, halfpage

MRA719

250

100

150

200

IC (mA)

−2

−1

−3

Fig.5 Feedback capacitance as a function of

collector-base voltage; typical values.

IC=0; f=1MHz.

handbook, halfpage

02 10

0.4

(pF)

0.3

0.1

0.2

46 8

VCB (V)

MRA720

Dual NPN wideband transistor BFM505

1996 Oct 08 5

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NXP Semiconductors Product specification

Fig.6 Gain as a function of collector current;

typical values.

f=900MHz; VCE=3V.

handbook, halfpage

04812

MGG199

IC (mA)

gain (dB)

MSG

Fig.7 Gain as a function of collector current;

typical values.

f=2GHz; VCE=3V.

handbook, halfpage

04812

MGG200

IC (mA)

gain (dB)

MSG/G

max

Fig.8 Gain as a function of frequency;

typical values.

IC=1mA; VCE=3V.

handbook, halfpage

MGG201

f (MHz)

gain (dB)

MSG/G

max

Fig.9 Gain as a function of frequency;

typical values.

IC= 5 mA; VCE=3V.

handbook, halfpage

MGG202

f (MHz)

gain (dB)

MSG/G

max

Dual NPN wideband transistor BFM505

1996 Oct 08 6

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NXP Semiconductors Product specification

Fig.10 Minimum noise figure as a function of

collector current; typical values.

VCE=3V.

handbook, halfpage

−1

101

(dB)

IC (mA)

1000 MHz

2000 MHz

500 MHz

900 MHz

MGC766

Fig.11 Assoc iated available gain as a function of

collector current; typical values.

VCE=3V.

handbook, halfpage

−1

101

−5

ass

(dB)

IC (mA)

MGD686

f = 900 MHz

1GHz

2 GHz

Fig.12 Minimum noise figure as a function of

frequency; typical values.

VCE=3V.

handbook, halfpage

MGC768

(dB)

f (MHz)

1.25 mA

5 mA

Fig.13 Assoc iated available gain as a function of

frequency; typical values.

VCE=3V.

handbook, halfpage

MGC769

−5

ass

(dB)

f (MHz)

5 mAIC = 1.25 mA

Dual NPN wideband transistor BFM505

1996 Oct 08 7

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NXP Semiconductors Product specification

Fig.14 Package equivalent circuit SOT363A

(inductance only).

B1 B2

C1 C2

LB LB

E1 E2

MBG188

LP LP

T1 T2

LELE

Fig.15 Package capacitance (fF) between

indicated nodes.

3E2

27 6

0.4

0.6

1.0

Lead inductances (nH)

3 17 36348

B1 E2 E1 B2 C2

48 36 17 3

MBG189

Dual NPN wideband transistor BFM505

APPLICATION INFORMATION SPICE parameters for any single BFM505 die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 134.1 aA 2BF180.0 3 NF 0.988  4VAF38.34V 5 IKF 150.0 mA 6ISE27.81fA 7 NE 2.051  8 BR 55.19  9 NR 0.982  10 VAR 2.459 V 11 IKR 2.920 mA 12 ISC 17.45 aA 13 NC 1.062  14 RB 20.00  15 IRB 1.000 A 16 RBM 20.00  17 RE 1.171  18 RC 4.350 

(1)

21 22 CJE 284.7 fF 23 VJE 600.0 mV 24 MJE 0.303  25 TF 7.037 ps 26 XTF 12.34  27 VTF 1.701 V 28 ITF 30.64 mA 29 PTF 0.000 deg 30 CJC 242.4 fF 31 VJC 188.6 mV 32 MJC 0.041  33 XCJC 0.130  34 TR 1.332 ns

(1)

37 38 FC 0.897 

Note

1. These parameters have not been extracted,

1996 Oct 08 8

the default values are shown.

XTB 0.000  EG 1.110 eV XTI 3.000 

CJS 0.000 F VJS 750.0 mV MJS 0.000 

Page 9

NXP Semiconductors Product specification

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC JEITA

SOT363 SC-88

wBM

pin 1 index

detail X

v M

0 1 2 mm

scale

132

456

Plastic surface-mounted package; 6 leads SOT363

UNIT

max

Qywv

0.1

0.30

0.20

2.2

1.8

0.25

0.10

1.35

1.15

0.65

1.3

2.2

2.0

0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

0.25

0.15

1.1

0.8

04-11-08 06-03-16

Dual NPN wideband transistor BFM505

PACKAGE OUTLINE

1996 Oct 08 9

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NXP Semiconductors Product specification

Dual NPN wideband transistor BFM505

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Developme nt This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

DEFINITIONS Product specification  The information and data

provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

DISCLAIMERS Limited warranty and liability  Information in this

document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

(1)

PRODUCT STATUS

(2)

DEFINITION

development.

Right to make changes  NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication he reof.

Suitability for use  NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications wher e failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inc l usion and/or use is at the customer’s own risk.

Applications  Applications that ar e described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the ris ks associated with their applications and products.

1996 Oct 08 10

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NXP Semiconductors Product specification

Dual NPN wideband transistor BFM505

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applicat ions and products using NXP Semiconductors products in or de r to avoid a default of the applications and the prod ucts or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Limiting values  Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Rec ommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale  NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In cas e an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

Export control  This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data  The Quick reference data is an extract of the product data given in t he Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with auto motive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from cus tom er d esign and use o f the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

No offer to sell or license  Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights .

1996 Oct 08 11

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NXP Semiconductors

provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected]

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and relia ble and may be chan ged without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R77/02/pp12 Date of release: 1996Oct 08