Philips bfg480w_n_21 Datasheet

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

FEATURES

• High power gain

• High efficiency

• Low noise figure

• High transition frequency

• Emitter is thermal lead

• Low feedback capacitance

• Linear and non-linear operation.

APPLICATIONS

• RF front end with high linearity system demands
(CDMA)

• Common emitter class AB driver.

DESCRIPTION

NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.

PINNING

PIN DESCRIPTION

1 emitter
2 base
3 emitter
4 collector

handbook, halfpage

Marking code: P6.

43

21

Top view

MSB842

Fig.1 Simplified outline SOT343R.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEO

I

C

P

tot

f

T

G

max

F noise figure I
G

P

η

C

collector-emitter voltage open base −−4.5 V
collector current (DC) − 80 250 mA
total power dissipation Ts≤ 60 °C −−360 mW
transition frequency IC= 80 mA; VCE= 2 V; f = 2 GHz; T
maximum gain IC= 80 mA; VCE= 2 V; f = 2 GHz; T

= 8 mA; VCE= 2 V; f = 2 GHz; ΓS= Γ

C

power gain Pulsed; class-AB; δ < 1 : 2; tp= 5 ms;

= 3.6 V; f = 2 GHz; PL= 100 mW

V

CE

collector efficiency Pulsed; class-AB; δ < 1 : 2; tp= 5 ms;

=25°C − 23 − GHz

amb

=25°C − 16 − dB

amb

opt

− 1.8 − dB
12 −−dB

40 −−%

VCE= 3.6 V; f = 2 GHz; PL= 100 mW

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

1998 Jul 09 2

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 14.5 V
collector-emitter voltage open base − 4.5 V
emitter-base voltage open collector − 1V
collector current (DC) − 250 mA
total power dissipation Ts≤ 60 °C; note 1; see Fig.2 − 360 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C

is the temperature at the soldering point of the emitter pins.

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point 250 K/W

500

P

tot

(mW)

400

300

200

100

0

04080120160

T

(°C)

S

Fig.2 Power derating curve.

1998 Jul 09 3

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

max

S

21

F noise figure I

P

L1

ITO third order intercept point I

collector-base breakdown voltage IC=50µA; IE= 0 14.5 −−V
collector-emitter breakdown voltage IC= 5 mA; IB= 0 4.5 −−V
emitter-base breakdown voltage IE= 100 µA1−−V
collector-base leakage current VCE=5V; VBE=0 −−70 nA
DC current gain IC= 80 mA; VCE= 2 V; see Fig.3 40 60 100
collector capacitance IE=ie= 0; VCB= 2 V; f = 1 MHz − 1.4 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 2.3 − pF
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz;

− 350 − fF

see Fig.4

transition frequency IC= 80 mA; VCE= 2 V; f = 2 GHz;

T

=25°C; see Fig.5

amb

maximum power gain; note 1 IC= 80 mA; VCE= 2 V; f = 2 GHz;

T

=25°C; see Figs 7 and 8

amb

insertion power gain I

2

output power at 1 dB gain
compression

= 80 mA; VCE= 2 V; f = 2 GHz;

C

T

=25°C; see Fig.8

amb

= 8 mA; VCE= 2 V; f = 900 MHz;

C

ΓS= Γ

I

C

ΓS= Γ

; see Fig.13

opt

= 8 mA; VCE= 2 V; f = 2 GHz;

; see Fig.13

opt

Class-AB; δ < 1 : 2; tp= 5 ms;
VCE= 3.6 V; ICQ= 1 mA; f = 2 GHz

= 80 mA; VCE= 2 V; f = 2 GHz;

C

ZS=Z

S opt

; ZL=Z

L opt

; note 2

− 23 − GHz

− 16 − dB

− 12 − dB

− 1.2 − dB

− 1.8 − dB

− 20 − dBm

− 28 − dBm

Notes

1. G

is the maximum power gain, if K > 1. If K < 1 then G

max

2. ZS is optimized for noise; ZL is optimized for gain.

1998 Jul 09 4

= MSG; see Figs 6, 7 and 8.

max

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

100

h

FE

80

60

40

20

0

050100150

I

(mA)

C

VCE=2V.

Fig.3 DC current gain as a function of collector

current; typical values.

800

C

re

(pF)

600

400

200

0

012345

(V)

V

CB

IC= 0; f= 1 MHz.

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

30

f

T

(GHz)

20

10

0

10 100 1000

f = 2 GHz; VCE= 2 V; T

amb

=25°C.

I

C

(mA)

Fig.5 Transition frequency as a function of

collector current; typical values.

1998 Jul 09 5

30

gain
(dB)

20

10

MSG

G

max

S

21

0

04080120160

(mA)

I

C

f = 900 MHz; VCE=2V.

Fig.6 Gain as a function of collector current;

typical values.

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

20

gain
(dB)

16

12

8

4

0

04080120160

G

max

S

21

I

(mA)

C

VCE= 2 V; f = 2 GHz.

Fig.7 Gain as a function of collector current;

typical values.

50

gain
(dB)

40

30

20

10

0

10 100 1000 10000

S

MSG

21

IC= 80 mA; VCE=2V.

Fig.8 Gain as a function of frequency;

typical values.

G

max

f (MHz)

1998 Jul 09 6

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

IC= 80 mA; VCE= 2 V; Zo=50Ω.

Fig.9 Common emitter input reflection coefficient (S11); typical values.

180°

90°

+1

+0.5

135°

3GHz

+0.2

0

0.2 0.5 1 2 5

40MHz

-0.2

-135°

-0.5

-90°

1.0

45°

+2

+5

-5

-2

-45°

-1

0.8

0.6

0.4

0.2

0°

0

1.0

IC= 80 mA; VCE=2V.

90°

45°

0°

-45°-135°

180°

135°

40MHz

2025

3GHz

51015

-90°

Fig.10 Common emitter forward transmission coefficient (S21); typical values.

1998 Jul 09 7

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

90°

IC= 80 mA; VCE=2V.

45°

0°

-45°-135°

180°

135°

3GHz

0.10.20.30.40.5

40MHz

-90°

Fig.11 Common emitter reverse transmission coefficient (S12); typical values.

90°

+1

+0.5

135°

+0.2

3GHz

0

180°

0.2 0.5 1 2 5

-0.2

-135°

-0.5

-90°

IC= 80 mA; VCE= 2 V; Zo=50Ω.

Fig.12 Common emitter output reflection coefficient (S22); typical values.

1998 Jul 09 8

1.0

45°

+2

+5

40MHz

-5

-2

-45°

-1

0.8

0.6

0.4

0.2

0°

0

1.0

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

Noise data

V

= 2 V; typical values.

CE

f

(MHz)

I

C

(mA)

F

min

(dB)

Γ

mag

Γ

angle

(Ω)

900 2 1.1 0.41 96.1 0.21

4 1.1 0.31 106.6 0.14
6 1.2 0.27 118.4 0.12
8 1.2 0.26 131.7 0.10
10 1.3 0.28 143.2 0.10
20 1.6 0.39 166.2 0.07
40 2.0 0.49 176.0 0.07
60 2.3 0.57 179.5 0.07
80 2.9 0.45 177.3 0.18

2000 2 2.4 0.57 171.9 0.09

4 2.0 0.49 178.9 0.08
6 1.8 0.46 −175.7 0.09
8 1.8 0.44 −171.7 0.09
10 1.8 0.43 −168.4 0.09
12 1.8 0.44 −165.3 0.10
14 1.8 0.44 −163.7 0.10
20 1.9 0.46 −158.3 0.11
40 2.3 0.52 −150.2 0.14
60 2.6 0.56 −147.7 0.18
80 2.8 0.60 −146.1 0.22

r

n

4

F

min

(dB)

3

2 GHz

2

1

0

0 20406080

VCE=2V.

900MHz

(mA)

I

C

Fig.13 Minimum noise figure as a function of the

collector current; typical values.

APPLICATION INFORMATION

RF performance at T

MODE OF OPERATION

Pulsed; class-AB; δ < 1 : 2; t

≤ 60 °C in a common emitter test circuit (see Figs 18 and 19).

s

f

(GHz)

= 5 ms 2 3.6 1 100 typ. 13.5 typ. 45

p

V

(V)

CE

1998 Jul 09 9

I

CQ

(mA)

P

L

(mW)

G

(dB)

p

η

C

(%)

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

16

G

P

(dB)

12

8

4

0

10 14 18 22 26

G

P

η

C

(dBm)

P

L

Pulsed, class-AB operation; δ < 1 ; 2; tp= 5 ms.
f = 2 GHz; VCE= 2.4 V; ICQ= 1 mA; tuned at PL= 100 mW.

Fig.14 Power gain and collector efficiency as a

function of the load power; typical values.

22

PL (dBm)

MGL456

80

η

C

(%)

60

40

20

0

80

η

C

(%)

60

40

20

0

16

handbook, halfpage

G

P

(dB)

12

8

4

0

10 14 18 26

G

P

η

C

Pulsed, class-AB operation; δ < 1 ; 2; tp= 5 ms.
f = 2 GHz; VCE= 3.6 V; ICQ= 1 mA; tuned at PL= 100 mW.

Fig.15 Power gain and collector efficiency as a

function of the load power; typical values.

10

Z

i

(Ω)

8

6

4

2

0

1.8 1.85 1.9 1.95 2

r

i

x

i

f (GHz)

VCE= 3.6 V; ICQ= 1 mA; PL= 100 mW; Ts≤ 60 °C.

Fig.16 Input impedance as function of frequency

(series components); typical values.

1998 Jul 09 10

30

Z

L

(Ω)

20

10

0

1.8 1.85 1.9 1.95 2

R

L

X

L

f (GHz)

VCE= 3.6 V; ICQ= 1 mA; PL= 100 mW; Ts≤ 60 °C.

Fig.17 Load impedance as a function of frequency

(series components); typical values.

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

handbook, full pagewidth

RF input

50 Ω

V

C

R1

TR1

R2

C1

C3

C2

L1

L2

L3

DUT

V

S

L5

C7

R3

C6

L4

C5

RF output

50 Ω

C4

MGM221

Fig.18 Common emitter test circuit for class-AB operation at 2 GHz.

List of components used in test circuit (see Figs 18 and 19)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C5 multilayer ceramic chip capacitor; note 1 24 pF
C2, C4 multilayer ceramic chip capacitor; note 1 2 pF
C3, C6 multilayer ceramic chip capacitor, note 1 15 pF
C7 multilayer ceramic chip capacitor; note 1 1 nF
L1, L4 stripline; note 2 100 Ω 18 x 0.2 mm
L2 stripline; note 2 50 Ω 5 x 0.8 mm
L3 stripline; note 2 50 Ω 6 x 0.8 mm
L5 Grade 4S2 Ferroxcube chip bead 4330 030 36300
R1 metal film resistor 220 Ω; 0.4 W
R2, R3 metal film resistor 10 Ω; 0.4 W
TR1 NPN transistor BC817 9335 895 20215

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (ε

tan δ = 0.0019); thickness 0.64 mm, copper cladding = 35 µm.

1998 Jul 09 11

= 6.15,

r

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

handbook, full pagewidth

45

35

DUT

V

S

L5

C7R3

C6

L4

C5

L3

C4

output

MBK827

V

C

TR1

C1

input

Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

R1

R2

C3

L1

L2

C2

Fig.19 Printed-circuit board and component lay-out for 2 GHz class-AB test circuit in Fig.18.

1998 Jul 09 12

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

PACKAGE OUTLINE

Plastic surface mounted package; reverse pinning; 4 leads SOT343R

D

y

e

E

H

E

AB

X

v

M

A

43

Q

A

A

1

c

21

detail X

L

p

M

p

e

b

B

w

b

1

1

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

mm

OUTLINE
VERSION

SOT343R

1.1

0.8

A

max

0.1

b

p

0.4

0.3

IEC JEDEC EIAJ

b

1

0.7

0.5

cD

0.25

2.2

0.10

1.8

E

1.35

1.3

1.15

REFERENCES

e

UNIT

1998 Jul 09 13

H

L

e

E

1

2.2

0.45

2.0

0.15

Qwv

p

0.23

0.13

0.2y0.10.21.15

EUROPEAN

PROJECTION

ISSUE DATE

97-05-21

Philips Semiconductors Preliminary specification

NPN wideband transistor BFG480W

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Jul 09 14