Philips bfg425w Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

BFG425W

NPN 25 GHz wideband transistor

Product specification
Supersedes data of 1998 Mar 11

2010 Sep 15

NXP Semiconductors Product specification

Fig.1 Simplified outline SOT343R.

Marking code: P5*

handbook, halfpage

Top view

MSB842

21

43

* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia

NPN 25 GHz wideband transistor BFG425W

FEATURES

 Very high power gain
 Low noise figure
 High transition frequency
 Emitter is thermal lead
 Low feedback capacitance.

APPLICATIONS

 RF front end
 Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

 Radar detectors
 Pagers
 Satellite television tuners (SATV)
 High frequency oscillators.

DESCRIPTION

NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.

PINNING

PIN DESCRIPTION

1emitter
2base
3emitter
4 collector

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

C

re

f

T

G

max

F noise figure I

collector-base voltage open emitter 10 V
collector-emitter voltage open base 4.5 V
collector current (DC)  25 30 mA
total power dissipation Ts 103 C 135 mW
DC current gain IC=25mA; VCE=2V; Tj=25C 5080120
feedback capacitance IC=0; VCB=2V; f=1MHz  95  fF
transition frequency IC=25mA; VCE= 2 V; f = 2 GHz; T
maximum power gain IC=25mA; VCE= 2 V; f = 2 GHz; T

=2mA; VCE= 2 V; f = 2 GHz; S= 

C

=25C  25  GHz

amb

=25C  20  dB

amb

opt

 1.2  dB

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.

2010 Sep 15 2

NXP Semiconductors Product specification

Fig.2 Power derating curve.

handbook, halfpage

0 40 160

200

150

50

0

100

80 120

MGG681

Ts (°C)

P

tot

(mW)

NPN 25 GHz wideband transistor BFG425W

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 1 34).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter  10 V
collector-emitter voltage open base  4.5 V
emitter-base voltage open collector  1V
collector current (DC)  30 mA
total power dissipation Ts 103 C; note 1; see Fig.2  135 mW
storage temperature 65 +150 C
operating junction temperature  150 C

is the temperature at the soldering point of the emitter pins.

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point 350 K/W

2010 Sep 15 3

NXP Semiconductors Product specification

S

21

2

NPN 25 GHz wideband transistor BFG425W

CHARACTERISTICS

T

=25C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

max

F noise figure I

P

L1

ITO third order intercept point I

collector-base breakdown volt a ge IC=2.5A; IE=0 10 V
collector-emitter breakdown voltage IC=1mA; IB=0 4.5 V
emitter-base breakdown voltage IE=2.5A; IC=0 1 V
collector-base leakage current IE=0; VCB=4.5V 15 nA
DC current gain IC=25mA; VCE= 2 V; see Fig.3 50 80 120
collector capacitance IE=ie=0; VCB=2V; f=1MHz  300  fF
emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz  575  fF
feedback capacitance IC=0; VCB= 2 V; f = 1 MHz;

 95  fF

see Fig.4

transition frequency IC=25mA; VCE=2V; f=2GHz;

=25C; see Fig.5

T

amb

maximum power gain; note 1 IC=25mA; VCE=2V; f=2GHz;

=25C; seeFigs7and8

T

amb

insertion power gain I

output power at 1 dB gain
compression

=25mA; VCE=2V; f=2GHz;

C

T

=25C; see Fig.8

amb

=2mA; VCE= 2 V; f = 900 MHz;

C

= 



S

I

C



S

; see Fig.13

opt

=2mA; VCE=2V; f=2GHz;

= 

; see Fig.13

opt

IC=25mA; VCE=2V; f=2GHz;
Z

S=ZSopt

=25mA; VCE=2V; f=2GHz;

C

Z

S=ZSopt

; ZL=Z

; ZL=Z

Lopt

Lopt

; note 2

; note 2

 25  GHz

 20  dB

 17  dB

 0.8  dB

 1.2  dB

 12  dBm

 22  dBm

Notes

1. G

2. Z

is the maximum power gain, if K > 1. If K < 1 then G

max

is optimized for noise; ZL is optimized for gain.

S

=MSG; seeFigs6,7and8.

max

2010 Sep 15 4

NXP Semiconductors Product specification

Fig.3 DC current gain as a function of collector

current; typical values.

(1) VCE=3V.
(2) VCE=2V.
(3) VCE=1V.

handbook, halfpage

01020 4030

MGG682

120

0

40

80

IC (mA)

h

FE

(3)

(2)

(1)

IC=0; f=1MHz.

Fig.4 F eedback capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

01 5

200

120

40

0

80

160

23 4

MGG683

VCB (V)

C

re

(fF)

Fig.5 Transition frequency as a function of

collector current; typical values.

VCE=2V; f=2 GHz; T

amb

=25C.

handbook, halfpage

25

0

5

10

15

20

MGG684

11010

2

f

T

(GHz)

IC (mA)

VCE=2V; f=900MHz.

Fig.6 Max imum s table gain as a fun ction of

collector current; typical values.

handbook, halfpage

01020 4030

MGG685

30

0

10

20

IC (mA)

MSG

(dB)

NPN 25 GHz wideband transistor BFG425W

2010 Sep 15 5

NXP Semiconductors Product specification

VCE=2V; f=2 GHz.

Fig.7 Gain as a function of collector current;

typical values.

handbook, halfpage

010 3020 40

MGG686

30

10

0

20

IC (mA)

gain
(dB)

MSG

G

max

IC=25mA; VCE=2V.

Fig.8 Gain as a function of frequency;

typical values.

handbook, halfpage

50

0

10 10

2

10

3

10

4

MGG687

10

20

30

40

f (MHz)

gain
(dB)

MSG

G

max

S

21

Fig.9 Common emitter input reflection coefficient (S11); typical values.

IC=25mA; VCE=2V; Zo=50

handbook, full pagewidth

MGG689

0

0.2

0.6

0.4

0.8

1.0

1.0

5

2

1

0.5

0.2

0

0.2

0.5

1

2

5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

NPN 25 GHz wideband transistor BFG425W

2010 Sep 15 6

NXP Semiconductors Product specification

Fig.10 Common emitter forward transmission coefficient (S21); typical values.

IC=25mA; VCE=2V.

handbook, full pagewidth

MGG690

50 40 30 20 10

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

IC=25mA; VCE=2V.

Fig.11 Common emitter reverse transmission coeffic ient (S12); typical values.

handbook, full pagewidth

MGG691

0.5 0.4 0.3 0.2 0.1

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

NPN 25 GHz wideband transistor BFG425W

2010 Sep 15 7

NXP Semiconductors Product specification

Fig.12 Common emitter output reflection coefficient (S22); typical values.

IC=25mA; VCE=2V; Zo=50

handbook, full pagewidth

MGG692

0

0.2

0.6

0.4

0.8

1.0

1.0

5

2

1

0.5

0.2

0

0.2

0.5

1

2

5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

Fig.13 Minimum noise fig ure as a function of the

collector current; typical values.

(1) VCE=2V; f=2 GHz.
(2) VCE= 2 V; f = 900 MHz.

handbook, halfpage

0102030

MGG688

3

1

0

2

IC (mA)

F

min

(dB)

(1)

(2)

NPN 25 GHz wideband transistor BFG425W

Noise data

V

= 2 V; typical values.

CE

f

(MHz)

I

C

(mA)

F

min

(dB)



mag

900 1 0.7 0.67 19.1 0.40

2 0.8 0.48 17.8 0.27
4 1 0.28 11.7 0.24
10 1.4 0.02 63.9 0.19
15 1.6 0.11 162.4 0.18
20 1.9 0.19 165.5 0.18
25 2.1 0.25 166.3 0.19
30 2.3 0.29 166.5 0.19

2000 1 1.3 0.56 57.5 0.36

2 1.2 0.43 57.2 0.25
4 1.2 0.22 60.8 0.18
10 1.6 0.06 137.4 0.19
15 1.9 0.13 162.1 0.20
20 2.2 0.17 155.5 0.20
25 2.5 0.22 152.2 0.21
30 2.8 0.27 150.8 0.25

2010 Sep 15 8



angle

rn

()

NXP Semiconductors Product specification

QLB= 50; QLE=50; QL

B,E

(f) = QL

B,E

(f/fc)

f

c

= scaling frequency = 1 GHz.

Fig.14 Package equivalent circuit SOT343R2.

handbook, halfpage

MGD956

B

E

CB' C'

E'

L3

L1 L2

C

cb

C

be ce

C

NPN 25 GHz wideband transistor BFG425W

SPICE parameters for the BFG425W die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 47.17 aA
2BF145.0
3 NF 0.993 
4VAF31.12V
5 IKF 304.0 mA

SEQUENCE No. PARAMETER VALUE UNIT

39
40

(3)

41

Notes

1. These parameters have not been extracted, the

6 ISE 300.2 fA
7 NE 3.000 

2. Bonding pad capacity C

8 BR 11.37 
9 NR 0.985 

3. Bonding pad capacity C

10 VAR 1.874 V
11 IKR 0.121 A
12 ISC 484.8 aA
13 NC 1.546 
14 RB 14.41 
15 IRB 0.000 A
16 RBM 6.175 
17 RE 177.9 m
18 RC 1.780 
19
20
21

(1)
(1)
(1)

XTB 1.500 
EG 1.110 eV

XTI 3.000 
22 CJE 310.9 fF
23 VJE 900.0 mV
24 MJE 0.346 
25 TF 4.122 ps
26 XTF 68.20 
27 VTF 2.004 V
28 ITF 1.525 A

List of components (see Fig.14)

29 PTF 0.000 deg
30 CJC 137.7 fF

C

31 VJC 556.9 mV
32 MJC 0.207 
33 XCJC 0.500 
34
35
36
37

(1)
(1)
(1)
(1)

TR 0.000 ns

CJS 667.5 fF

VJS 418.3 mV

MJS 0.239 
38 FC 0.550 

be

C

cb

C

ce

L1 1.1 nH
L2 1.1 nH
L3 (note 1) 0.25 nH

Note

1. External emitter inductance to be added separately

(2)(3)
(2)

C

bp

R

sb1

R

sb2

145 fF
25 
19 

default values are shown.

in series with substrate

bp

resistance R

resistance R

between B and E.

sb1

in series with substrate

bp

between C and E.

sb2

DESIGNATION VALUE UNIT

80 fF
2fF
80 fF

due to the influence of the printed-circuit board.

2010 Sep 15 9

NXP Semiconductors Product specification

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT343R

D

A

A

1

L

p

Q

detail X

c

H

E

E

v M

A

AB

0 1 2 mm

scale

X

21

43

Plastic surface-mounted package; reverse pinning; 4 leads SOT343R

w M

B

97-05-21
06-03-16

b

p

UNIT

A

1

max

b

p

cD

E

b

1

H

E

L

p

Qwv

mm

0.1

1.1

0.8

0.4

0.3

0.25

0.10

0.7

0.5

2.2

1.8

1.35

1.15

e

2.2

2.0

1.3

e

1

0.2y0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15

0.23

0.13

e

1

A

e

y

b

1

NPN 25 GHz wideband transistor BFG425W

PACKAGE OUTLINE

2010 Sep 15 10

NXP Semiconductors Product specification

NPN 25 GHz wideband transistor BFG425W

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or co mpleting a design.

2. The product status of device(s) de scribed in this document may have changed sinc e this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

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(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

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warranty that such applications will be suitable for the
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customer(s). NXP does not accept any liability in this
respect.

2010 Sep 15 11

NXP Semiconductors Product specification

NPN 25 GHz wideband transistor BFG425W

Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.

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Semiconductors products are sold subject to the general
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Quick reference data  The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
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In the event that customer uses the product for design-in
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Semiconductors’ product specifications.

2010 Sep 15 12

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for the marking codes
and the package outline drawings which were updated to the latest version.

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The information presented in this document does not form part of any quotation or cont ra ct, is b elieve d to be accurate and reliable and may be changed
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Printed in The Netherlands R77/05/pp13 Date of release: 2010 Sep 15