Philips bfg424f Datasheet

Download

Page 1

BFG424F

NPN 25 GHz wideband transistor

Rev. 01 — 21 March 2006 Product data sheet

1. Product proﬁle

1.1 General description

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION

MSC895

1.2 Features

■ Very high power gain

■ Low noise ﬁgure

■ High transition frequency

■ Emitter is thermal lead

■ Low feedback capacitance

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.3 Applications

■ Radio Frequency (RF) front end wideband applications such as:

◆ analog and digital cellular telephones

◆ cordless telephones (Cordless Telephone (CT), Personal Handy-phone

System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)

◆ radar detectors

◆ pagers

◆ Satellite Antenna TeleVison (SATV) tuners

◆ high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise

Block (LNB)

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V V I P

CBO CEO

tot

collector-base voltage open emitter - - 10 V collector-emitter voltage open base - - 4.5 V collector current - 25 30 mA total power dissipation Tsp≤ 90 °C

[1]

- - 135 mW

Page 2

Philips Semiconductors

BFG424F

NPN 25 GHz wideband transistor

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CBS

DC current gain IC= 25 mA; VCE=2V;

collector-base capacitance

p(max)

transition frequency IC= 25 mA; VCE=2V;

maximum power gain IC= 25 mA; VCE=2V;

NF noise ﬁgure I

[1] Tsp is the temperature at the soldering point of the emitter pins. [2] G

is the maximum power gain, if K >1. If K < 1 then G

p(max)

Figure 8.

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 emitter 2 base 3 emitter 4 collector

…continued

50 80 120

=25°C

VCB= 2 V; f = 1 MHz - 102 - fF

- 25 - GHz

f = 2 GHz; T

= 2 mA; VCE=2V;

f = 2 GHz; Γ

amb

=25°C

= Γ

[2]

-23-dB

- 1.2 - dB

opt

= Maximum Stable Gain (MSG), see

p(max)

mbb159

1, 3

3. Ordering information

Table 3: Ordering information

Type number Package

Name Description Version

BFG424F - plastic surface mounted ﬂat pack package; reverse

SOT343F

pinning; 4 leads

4. Marking

Table 4: Marking

Type number Marking code

BFG424F NE*

[1] * = p: made in Hong Kong.

Product data sheet Rev. 01 — 21 March 2006 2 of 13

[1]

Page 3

Philips Semiconductors

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

[1] Tsp is the temperature at the soldering point of the emitter pins.

collector-base voltage open emitter - 10 V collector-emitter voltage open base - 4.5 V emitter-base voltage open collector - 1 V collector current - 30 mA total power dissipation Tsp≤ 90 °C storage temperature −65 +150 °C junction temperature - 150 °C

6. Thermal characteristics

BFG424F

NPN 25 GHz wideband transistor

[1]

- 135 mW

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-sp)

thermal resistance from junction

Tsp≤ 90 °C

[1]

340 K/W

to solder point

[1] Tsp is the temperature at the soldering point of the emitter pins.

200

tot

(mW)

150

100

0 16012040 80

001aad817

Tsp (°C)

Fig 1. Power derating curve

Product data sheet Rev. 01 — 21 March 2006 3 of 13

Page 4

Philips Semiconductors

7. Characteristics

Table 7: Characteristics

Tj=25°C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CES

EBS

CBS

p(max)

NF noise ﬁgure I

L(1dB)

IP3 third-order intercept

[1] G

p(max)

[2] ZS is optimized for noise; ZL is optimized for gain.

BFG424F

NPN 25 GHz wideband transistor

collector-base breakdown voltage

collector-emitter breakdown voltage

open-collector emitter-base breakdown voltage

collector-base cut-off current

DC current gain IC= 25 mA; VCE= 2 V 50 80 120 collector-emitter

capacitance emitter-base

capacitance collector-base

capacitance transition frequency IC= 25 mA; VCE= 2 V;f = 2 GHz;

maximum power gain

insertion power gain IC= 25 mA; VCE= 2 V;f = 2 GHz;

output power at 1 dB gain compression

point

is the maximum power gain, if K > 1. If K < 1 then G

IC= 2.5 µA; IE= 0 mA 10 - - V

IC= 1 mA; IB= 0 mA 4.5 - - V

IE= 2.5 µA; IC=0mA 1 - - V

IE= 0 mA; VCB= 4.5 V - - 15 nA

VCB= 2 V; f = 1 MHz - 363 - fF

VEB= 0.5 V; f = 1 MHz - 475 - fF

VCB= 2 V; f = 1 MHz - 102 - fF

- 25 - GHz

=25°C

amb

IC= 25 mA; VCE= 2 V;f = 2 GHz; T

=25°C

amb

[1]

-23-dB

- 18.5 - dB

=25°C

amb

= 2 mA; VCE=2V;

f = 900 MHz; Γ

= 2 mA; VCE= 2 V; f = 2 GHz;

= Γ

opt

= Γ

opt

IC= 25 mA; VCE= 2 V;f = 2 GHz; Z

S=ZS(opt)

= 25 mA; VCE= 2 V;f = 2 GHz;

S=ZS(opt)

; ZL=Z

L(opt)

= MSG, see Figure 8.

p(max)

- 0.8 - dB

- 1.2 - dB

[2]

- 12 - dBm

[2]

- 22 - dBm

Product data sheet Rev. 01 — 21 March 2006 4 of 13

Page 5

Philips Semiconductors

BFG424F

NPN 25 GHz wideband transistor

(mA)

054231

(1) IB= 400 µA (2) IB= 350 µA (3) IB= 300 µA (4) IB= 250 µA (5) IB= 200 µA (6) IB= 150 µA (7) IB= 100 µA (8) IB=50µA

Fig 2. Collector current as a function of

collector-emitter voltage; typical values

001aad818

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

VCE (V)

120

0403010 20

001aad819

(1) (2) (3)

IC (mA)

(1) VCE=3V (2) VCE=2V (3) VCE=1V

Fig 3. DC current gain as a function of collector

current; typical values

001aad820

VCB (V)

CBS

(fF)

200

160

120

054231

f=1MHz

Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values

Product data sheet Rev. 01 — 21 March 2006 5 of 13

Page 6

Philips Semiconductors

BFG424F

NPN 25 GHz wideband transistor

001aad821

(mA)

(GHz)

110

VCE= 2 V; f = 2 GHz; T

=25°CV

amb

Fig 5. Transition frequency as a function of collector

current; typical values

(dB)

MSG

p(max)

001aad823

001aad822

(mA)

MSG

amb

=25°C

(dB)

110

= 2 V; f = 0.9 GHz; T

Fig 6. Gain as a function of collector current; typical

values

001aad824

(dB)

MSG

p(max)

110

VCE= 2 V; f = 2 GHz; T

amb

(mA)

=25°CV

Fig 7. Gain as a function of collector current; typical

−5

−1

=2V; IC= 25 mA; T

amb

101

=25°C

f (GHz)

Fig 8. Gain as a function of frequency; typical values

values

Product data sheet Rev. 01 — 21 March 2006 6 of 13

Page 7

Philips Semiconductors

BFG424F

NPN 25 GHz wideband transistor

90°

−2

45°135°

−5

−45°−135°

001aad825

180°

+0.5

+0.2

−0.2

0.50.2

−0.5

−1

−90°

12 GHz

100 MHz

VCE=2V; IC= 25 mA; Zo=50Ω

Fig 9. Common emitter input reﬂection coefﬁcient (s11); typical values

90°

1.0

0.8

0.6

0.4

0.2

0°

1.0

45°135°

0.5 0.4 0.3 0.2 0.1

180°

100 MHz

−90°

0°

12 GHz

−45°−135°

001aad826

VCE=2V; IC=25mA

Fig 10. Common emitter reverse transmission coefﬁcient (s12); typical values

Product data sheet Rev. 01 — 21 March 2006 7 of 13

Page 8

Philips Semiconductors

100 MHz

50 40 30 20 10

180°

90°

12 GHz

BFG424F

NPN 25 GHz wideband transistor

45°135°

0°

−45°−135°

−90°

001aad827

VCE=2V; IC=25mA

Fig 11. Common emitter forward transmission coefﬁcient (s21); typical values

90°

−2

45°135°

100 MHz

−45°−135°

001aad828

0°

−5

180°

+0.5

+0.2

−0.2

−0.5

0.50.2

12 GHz

−1

−90°

1.0

0.8

0.6

0.4

0.2

1.0

VCE=2V; IC= 25 mA; Zo=50Ω

Fig 12. Common emitter input reﬂection coefﬁcient (s22); typical values

Product data sheet Rev. 01 — 21 March 2006 8 of 13

Page 9

Philips Semiconductors

7.1 Noise data

Table 8: Noise data

VCE= 2 V; typical values.

f I (MHz) (mA) (dB) ratio (deg) (Ω)

900 1 0.7 0.67 19.1 0.40

2000 1 1.3 0.56 57.5 0.36

BFG424F

NPN 25 GHz wideband transistor

min

2 0.81 0.48 17.8 0.27 4 1 0.28 11.7 0.24 10 1.4 0.02 −63.9 0.19 15 1.65 0.11 −162.4 0.18 20 1.9 0.19 −165.5 0.18 25 2.1 0.25 −166.3 0.19 30 2.3 0.29 −166.5 0.19

2 1.2 0.43 57.2 0.25 4 1.2 0.22 60.8 0.18 10 1.6 0.06 137.4 0.19 15 1.9 0.13 −162.1 0.20 20 2.2 0.17 −155.5 0.20 25 2.5 0.22 −152.2 0.21 30 2.8 0.27 −150.8 0.25

opt

001aad829

IC (mA)

(1) f = 2 GHz (2) f = 900 MHz

min

(dB)

0302010

(1)

(2)

Fig 13. Minimum noise ﬁgure as a function of collector current; typical values

Product data sheet Rev. 01 — 21 March 2006 9 of 13

Page 10

Philips Semiconductors

8. Package outline

BFG424F

NPN 25 GHz wideband transistor

Plastic surface-mounted flat pack package; reverse pinning; 4 leads

SOT343F

DIMENSIONS (mm are the original dimensions)

UNIT

OUTLINE VERSION

SOT343F

max

0.75

0.65

0.4

0.3

c D E e e1H

0.7

0.5

IEC JEDEC JEITA

0.25

0.10

2.2

1.8

1.35

1.15

0 1 2 mm

REFERENCES

1.151.3

scale

2.2

2.0

Lpw y

0.48

0.38

0.10.2

detail X

EUROPEAN

PROJECTION

ISSUE DATE

05-07-12

06-03-16

Fig 14. Package outline SOT343F

Product data sheet Rev. 01 — 21 March 2006 10 of 13

Page 11

Philips Semiconductors

NPN 25 GHz wideband transistor

BFG424F

9. Revision history

Table 9: Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFG424F_1 20060321 Product data sheet - -

Product data sheet Rev. 01 — 21 March 2006 11 of 13

Page 12

Philips Semiconductors

10. Data sheet status

BFG424F

NPN 25 GHz wideband transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representationorwarrantythat such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improvethe design,manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakesno representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed.

13. Trademarks

12. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 01 — 21 March 2006 12 of 13

Page 13

Philips Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.1 Noise data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information . . . . . . . . . . . . . . . . . . . . 12

BFG424F

NPN 25 GHz wideband transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 21 March 2006

BFG424F_1