Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
BFG410W
NPN 22 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 29
1998 Mar 11
Page 2
NXP Semiconductors Product specification
Fig.1 Simplified outline SOT343R.
Marking code: P4.
handbook, halfpage
Top view
MSB842
21
43
NPN 22 GHz wideband transistor BFG410W
FEATURES
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Pagers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN DESCRIPTION
1emitter
2 base
3emitter
4 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
max
F noise figure I
collector-base voltage open emitter 10 V
collector-emitter voltage open base 4.5 V
collector current (DC) 10 12 mA
total power dissipation Ts 110 C 54 mW
DC current gain IC=10mA; VCE=2V; Tj=25C 5080120
feedback capacitance IC=0; VCB=2V; f=1MHz 45 fF
transition frequency IC=10mA; VCE=2V; f=2GHz; T
maximum power gain IC=10mA; VCE=2V; f=2GHz; T
=1mA; VCE= 2 V; f = 2GHz; S=
C
=25C 22 GHz
amb
=25C 21 dB
amb
opt
1.2 dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1998 Mar 11 2
Page 3
NXP Semiconductors Product specification
Fig.2 Power derating curve.
handbook, halfpage
0
60
P
tot
(mW)
40
20
0
40 80 160
120
Ts (°C)
MGD960
NPN 22 GHz wideband transistor BFG410W
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134 ).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter 10 V
collector-emitter voltage open base 4.5 V
emitter-base voltage open collector 1V
collector current (DC) 12 mA
total power dissipation Ts 110 C; note 1; see Fig.2 54 mW
storage temperature 65 +150 C
operating junction temperature 150 C
is the temperature at the soldering point of the emitter pins.
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 750 K/W
1998 Mar 11 3
Page 4
NXP Semiconductors Product specification
S
21
2
NPN 22 GHz wideband transistor BFG410W
CHARACTERISTICS
T
=25C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
max
F noise figure I
P
L1
ITO third order intercept point I
collector-base breakdown volt a ge IC=2.5A; IE=0 10 V
collector-emitter breakdown
IC=1mA; IB=0 4.5 V
voltage
emitter-base breakdown voltage IE=2.5A; IC=0 1 V
collector-base leakage current IE=0; VCB=4.5V 15 nA
DC current gain IC=10mA; VCE= 2 V; see Fig.3 50 80 120
collector capacitance IE=ie=0; VCB=2V; f=1MHz 220 fF
emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz 400 fF
feedback capacitance IC=0; VCB= 2 V; f = 1 MHz;
45 fF
see Fig.4
transition frequency IC=10mA; VCE= 2 V; f = 2 GHz;
=25C; see Fig.5
T
amb
maximum power gain; note 1 IC=10mA; VCE= 2 V; f = 2 GHz;
T
=25C; seeFigs7and8
amb
insertion power gain I
output power at 1 dB gain
compression
=10mA; VCE= 2 V; f = 2 GHz;
C
=25C; see Fig.8
T
amb
=1mA; VCE=2V;
C
f=900MHz;
=1mA; VCE= 2 V; f = 2 GHz;
I
C
=
S
; see Fig.13
opt
=
S
; see Fig.13
opt
IC=10mA; VCE= 2 V; f = 2 GHz;
Z
S=ZS opt
=10mA; VCE= 2 V; f = 2 GHz;
C
Z
S=ZS opt
; ZL=Z
; ZL=Z
Lopt
Lopt
; note 2
; note 2
22 GHz
21 dB
18 dB
0.9 dB
1.2 dB
5 dBm
15 dBm
Notes
1. G
2. Z
is the maximum power gain, if K > 1. If K < 1 then G
max
is optimized for noise; ZL is optimized for gain.
S
=MSG; seeFigs6,7and8.
max
1998 Mar 11 4
Page 5
NXP Semiconductors Product specification
Fig.3 DC current gain as a function of collector
current; typical values.
(1) VCE=3V.
(2) VCE=2V.
(3) VCE=1V.
handbook, halfpage
0 4 12 168
MGG717
120
100
0
40
80
60
20
IC (mA)
h
FE
(1)
(2)
(3)
IC=0; f=1MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
01 5
100
60
20
0
40
80
23 4
MGG718
VCB (V)
C
re
(fF)
Fig.5 Transition frequency as a function of
collector current; typical values.
VCE=2V; f=2GHz; T
amb
=25C.
handbook, halfpage
25
0
5
10
15
20
MGG719
11010
2
f
T
(GHz)
IC (mA)
VCE=2V; f=900MHz.
Fig.6 Maximum stable gain as a function of
collector current; typical values.
handbook, halfpage
048 1612
MGG720
30
0
10
20
IC (mA)
MSG
(dB)
NPN 22 GHz wideband transistor BFG410W
1998 Mar 11 5
Page 6
NXP Semiconductors Product specification
VCE=2V; f=2GHz.
Fig.7 Gain as a function of collector current;
typical values.
handbook, halfpage
0812416
MGG721
30
10
0
20
MSG
G
max
IC (mA)
gain
(dB)
IC=10mA; VCE=2V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, halfpage
50
0
10 10
2
10
3
10
4
MGG722
10
20
30
40
f (MHz)
gain
(dB)
MSG
S
21
Fig.9 Common emitter input reflection coefficient (S11); typical values.
IC=10mA; VCE=2V; Zo=50
handbook, full pagewidth
MGG724
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
NPN 22 GHz wideband transistor BFG410W
1998 Mar 11 6
Page 7
NXP Semiconductors Product specification
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
IC=10mA; VCE=2V.
handbook, full pagewidth
MGG725
50 40 30 20 10
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
IC=10mA; VCE=2V.
Fig.11 Common emitter reverse transmission coeffic ient (S12); typical values.
handbook, full pagewidth
MGG726
0.1 0.08 0.06 0.04 0.02
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
NPN 22 GHz wideband transistor BFG410W
1998 Mar 11 7
Page 8
NXP Semiconductors Product specification
Fig.12 Common emitter output reflection coefficient (S22); typical values.
IC=10mA; VCE=2V; Zo=50
handbook, full pagewidth
MGG727
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
Fig.13 Minimum noise fig ure as a function of the
collector current; typical values.
(1) f = 2 GHz; VCE=2V.
(2) f = 900 MHz; V
CE
=2V.
handbook, halfpage
0841216
MGG723
3
1
0
2
IC (mA)
F
min
(dB)
(1)
(2)
NPN 22 GHz wideband transistor BFG410W
Noise data
V
= 2 V; typical values.
CE
f
(MHz)
I
C
(mA)
F
min
(dB)
mag
900 1 0.8 0.73 11.2 0.56
2 0.9 0.58 10.1 0.43
4 1.1 0.40 10.1 0.33
6 1.3 0.28 11.0 0.30
8 1.5 0.20 8.0 0.30
10 1.7 0.14 10.5 0.27
12 1.9 0.06 10.1 0.25
14 2.1 0.05 14.2 0.26
2000 1 1.2 0.64 35.7 0.57
2 1.2 0.50 35.8 0.44
4 1.4 0.34 34.4 0.37
6 1.6 0.25 33.7 0.34
8 1.8 0.17 34.5 0.35
10 2.0 0.12 35.8 0.34
12 2.2 0.05 38.0 0.35
14 2.4 0.03 44.8 0.34
1998 Mar 11 8
angle
rn
()
Page 9
NXP Semiconductors Product specification
QLB= 50; QLE=50; QL
B,E
(f) = QL
B,E
(f/fc)
f
c
= scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343R2.
handbook, halfpage
MGD956
B
E
CB' C'
E'
L3
L1 L2
C
cb
C
be ce
C
NPN 22 GHz wideband transistor BFG410W
SPICE parameters for the BFG410W die
SEQUENCE No. PARAMETER VALUE UN IT
1 IS 19.42 aA
2BF145.0
3 NF 0.993
4VAF31.12V
5 IKF 125.0 mA
SEQUENCE No. PARAMETER VALUE UNIT
39
40
41
Notes
1. These parameters have not been extr a cted, the
6 ISE 123.6 fA
7 NE 3.000
2. Bonding pad capacity C
8 BR 11.37
9 NR 0.985
3. Bonding pad capacity C
10 VAR 1.874 V
11 IKR 50.00 mA
12 ISC 199.6 aA
13 NC 1.546
14 RB 35.00
15 IRB 0.000 A
16 RBM 15.00
17 RE 432.0 m
18 RC 4.324
19
20
21
(1)
(1)
(1)
XTB 1.500
EG 1.110 eV
XTI 3.000
22 CJE 128.0 fF
23 VJE 900.0 mV
24 MJE 0.346
25 TF 4.122 ps
26 XTF 68.20
27 VTF 2.004 V
28 ITF 0.627 A
List of components (see Fig.14)
29 PTF 0.000 deg
30 CJC 56.68 fF
C
31 VJC 556.9 mV
32 MJC 0.207
33 XCJC 0.500
34
35
36
37
(1)
(1)
(1)
(1)
TR 0.000 ns
CJS 274.8 fF
VJS 418.3 mV
MJS 0.239
38 FC 0.550
be
C
cb
C
ce
L1 1.1 nH
L2 1.1 nH
L3 (note 1) 0.25 nH
Note
1. External emitter inductance to be added separately
(2)(3)
(2)
(3)
C
bp
R
sb1
R
sb2
145 fF
25
19
default values are shown.
in series with substrate
bp
resistance R
resistance R
between B and E.
sb1
in series with substrate
bp
between C and E.
sb2
DESIGNATION VALUE UNIT
80 fF
2fF
80 fF
due to the influence of the printed-circuit board.
1998 Mar 11 9
Page 10
NXP Semiconductors Product specification
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT343R
D
A
A
1
L
p
Q
detail X
c
H
E
E
v M
A
AB
0 1 2 mm
scale
X
21
43
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
w M
B
97-05-21
06-03-16
b
p
UNIT
A
1
max
b
p
cD
E
b
1
H
E
L
p
Qwv
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
0.7
0.5
2.2
1.8
1.35
1.15
e
2.2
2.0
1.3
e
1
0.2y0.10.21.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
e
1
A
e
y
b
1
NPN 22 GHz wideband transistor BFG410W
PACKAGE OUTLINE
1998 Mar 11 10
Page 11
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This docume nt contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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Limited warranty and liability Information in this
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However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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In no event shall NXP Semiconductors be liable for any
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accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
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specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication he reof.
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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Applications Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
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design and operating safeguards to minimize the ris ks
associated with their applications and products.
1998 Mar 11 11
Page 12
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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http://www.nxp.com/profile/terms, unless otherwise
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Quick reference data The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
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In the event that customer uses the product for design-in
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that is open for acceptance or the grant, conveyance or
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1998 Mar 11 12
Page 13
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re liable and may be changed
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Printed in The Netherlands R77/04/pp13 Date of release: 1998Mar 11
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