Philips bfg403w Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

BFG403W

NPN 17 GHz wideband transistor

Product specification
Supersedes data of 1997 Oct 29

1998 Mar 11

NXP Semiconductors Product specification

Fig.1 Simplified outline SOT343R.

Marking code: P3.

handbook, halfpage

Top view

MSB842

21

43

NPN 17 GHz wideband transistor BFG403W

FEATURES

 Low current
 Very high power gain
 Low noise figure
 High transition frequency
 Very low feedback capacitance.

APPLICATIONS

 Pager front ends
 RF front end
 Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

 Radar detectors.

DESCRIPTION

NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.

PINNING

PIN DESCRIPTION

1emitter
2 base
3emitter
4 collector

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

C

re

f

T

G

max

F noise figure I

collector-base voltage open emitter 10 V
collector-emitter voltage open base 4.5 V
collector current (DC)  33.6mA
total power dissipation Ts 140 C 16 mW
DC current gain IC=3mA; VCE=2V; Tj=25C 5080120
feedback capacitance IC=0; VCB=2V; f=1MHz  20  fF
transition frequency IC=3mA; VCE= 2 V; f = 2 GHz; T
maximum power gain IC=3mA; VCE= 2 V; f = 2 GHz; T

=1mA; VCE= 2 V; f = 900 MHz; S= 

C

=25C  17  GHz

amb

=25C  22  dB

amb

 1  dB

opt

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.

1998 Mar 11 2

NXP Semiconductors Product specification

Fig.2 Power derating curve.

handbook, halfpage

0 40 80 120 160

MGD957

20

0

10

Ts (°C)

P

tot

(mW)

NPN 17 GHz wideband transistor BFG403W

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter  10 V
collector-emitter voltage open base  4.5 V
emitter-base voltage open collector  1V
collector current (DC)  3.6 mA
total power dissipation Ts 140 C; note 1; see Fig.2  16 mW
storage temperature 65 +150 C
operating junction temperature  150 C

is the temperature at the soldering point of the emitter pins.

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point 820 K/W

1998 Mar 11 3

NXP Semiconductors Product specification

S

21

2

NPN 17 GHz wideband transistor BFG403W

CHARACTERISTICS

T

=25C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

max

F noise figure I

P

L1

ITO third order intercep t point I

collector-base breakdown volt a ge IC=2.5A; IE=0 10 V
collector-emitter breakdown voltage IC=1mA; IB=0 4.5 V
emitter-base breakdown voltage IE=2.5A; IC=0 1 V
collector-base leakage current IE=0; VCB=4.5V 15 nA
DC current gain IC=3mA; VCE= 2 V; see Fig.3 50 80 120
collector capacitance IE=ie=0; VCB=2V; f=1MHz  170  fF
emitter capacitance IC=ic=0; VEB= 0.5 V; f = 1 MHz  315  fF
feedback capacitance IC=0; VCB= 2 V; f = 1 MHz;

 20  fF

see Fig.4

transition frequency IC=3mA; VCE= 2 V; f = 2 GHz;

=25C; see Fig.5

T

amb

maximum power gain; note 1 IC=0.5mA; VCE= 1 V; f = 900 MHz;

=25C; see Figs 6 and 8

T

amb

=3mA; VCE= 2 V; f = 2 GHz;

I

C

T

=25C; see Figs 7 and 8

amb

insertion power gain I

output power at 1 dB gain
compression

=0.5mA; VCE= 1 V; f = 900 MHz;

C

=25C; see Fig.8

T

amb

=3mA; VCE= 2 V; f = 2 GHz;

I

C

T

=25C; see Fig.8

amb

=1mA; VCE= 2 V; f = 900 MHz;

C

= 



S

I

C



S

; see Fig.13

opt

=1mA; VCE= 2 V; f = 2 GHz;

= 

; see Fig.13

opt

IC=1mA; VCE= 1 V; f = 900 MHz;
Z

S=ZSopt

=1mA; VCE= 1 V; f = 900 MHz;

C

Z

S=ZSopt

; ZL=Z

; ZL=Z

Lopt

Lopt

; note 2

; note 2

 17  GHz

 20  dB

 22  dB

 5  dB

 14  dB

 1  dB

 1.6  dB

5  dBm

 6  dBm

Notes

1. G

2. Z

is the maximum power gain, if K > 1. If K < 1 then G

max

is optimized for noise; ZL is optimized for gain.

S

= MS G; see Figs 6, 7 and 8.

max

1998 Mar 11 4

NXP Semiconductors Product specification

Fig.3 DC current gain as a function of collector

current; typical values.

(1) VCE=3V.
(2) VCE=2V.
(3) VCE=1V.

handbook, halfpage

0246

MGG678

120

0

40

80

IC (mA)

h

FE

(1)
(2)
(3)

IC=0; f=1MHz.

Fig.4 F eedback capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

01 5

50

30

10

0

20

40

23 4

MGG679

VCB (V)

C

re

(fF)

Fig.5 Transition frequency as a function of

collector current; typical values.

VCE=2V; f=2GHz; T

amb

=25C.

handbook, halfpage

20

0

4

8

12

16

MGG680

101

f

T

(GHz)

IC (mA)

VCE=2V; f=900MHz.

Fig.6 Max imum s table gain as a fun ction of

collector current; typical values.

handbook, halfpage

0246

MGG709

30

10

0

20

IC (mA)

MSG

(dB)

NPN 17 GHz wideband transistor BFG403W

1998 Mar 11 5

NXP Semiconductors Product specification

VCE=2V; f=2GHz.

Fig.7 Max imum s table gain as a fun ction of

collector current; typical values.

handbook, halfpage

0246

MGG710

30

10

0

20

IC (mA)

MSG

(dB)

IC=3mA; VCE=2V.

Fig.8 Gain as a function of frequency;

typical values.

handbook, halfpage

0

10 10

2

10

3

10

4

MGG711

10

20

30

40

f (MHz)

gain
(dB)

MSG

S

21

Fig.9 Common emitter input reflection coefficient (S11); typical values.

IC=3mA; VCE=2V; Zo=50

handbook, full pagewidth

MGG713

0

0.2

0.6

0.4

0.8

1.0

1.0

5

2

1

0.5

0.2

0

0.2

0.5

1

2

5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

NPN 17 GHz wideband transistor BFG403W

1998 Mar 11 6

NXP Semiconductors Product specification

Fig.10 Common emitter forward transmission coefficient (S21); typical values.

IC=3mA; VCE=2V.

handbook, full pagewidth

MGG714

25 20 15 10 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

IC=3mA; VCE=2V.

Fig.11 Common emitter reverse transmission coeffic ient (S12); typical values.

handbook, full pagewidth

MGG715

0.05 0.04 0.03 0.02 0.01

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

NPN 17 GHz wideband transistor BFG403W

1998 Mar 11 7

NXP Semiconductors Product specification

Fig.12 Common emitter output reflection coefficient (S22); typical values.

IC=3mA; VCE=2V; Zo=50

handbook, full pagewidth

MGG716

0

0.2

0.6

0.4

0.8

1.0

1.0

5

2

1

0.5

0.2

0

0.2

0.5

1

2

5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

Fig.13 Minimum noise fig ure as a function of the

collector current; typical values.

(1) VCE=2V; f=2GHz.
(2) VCE= 2 V; f = 900 MHz.

handbook, halfpage

0246

MGG712

3

1

0

2

(1)

(2)

IC (mA)

F

min

(dB)

NPN 17 GHz wideband transistor BFG403W

Noise data

V

CE

(MHz)

900 0.5 0.9 0.91 4.7 1.41

2000 0.5 1.8 0.71 27.5 1.47

= 2 V; typical values.

f

I

C

(mA)

F

min

(dB)



mag

1 1.1 0.83 5.1 1.12
2 1.4 0.71 5.1 0.97
3 1.6 0.62 5.0 0.88
4 1.9 0.56 4.9 0.84
5 2.1 0.50 4.2 0.82

1 1.6 0.74 26.1 1.11
2 1.8 0.64 26.3 0.93
3 2.1 0.56 26.1 0.91
4 2.4 0.48 26.7 0.9
5 2.8 0.45 25.8 0.85



angle

rn

()

1998 Mar 11 8

NXP Semiconductors Product specification

QLB= 50; QLE=50; QL

B,E

(f) = QL

B,E

(f/fc)

f

c

= scaling frequency = 1 GHz.

Fig.14 Package equivalent circuit SOT343R2.

handbook, halfpage

MGD956

B

E

CB' C'

E'

L3

L1 L2

C

cb

C

be ce

C

NPN 17 GHz wideband transistor BFG403W

SPICE parameters for the BFG403W die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 5.554 aA
2BF145.0
3 NF 0.993 
4VAF31.12V
5IKF35.75mA
6ISE35.35fA
7 NE 3.000 
8 BR 11.37 
9 NR 0.985 
10 VAR 1.874 V

SEQUENCE No. PARAMETER VALUE UNIT

(2)(3)

39

(2)

40

(3)

41

Notes

1. These parameters have not been extr a cted, the
default values are shown.

2. Bonding pad capacity C
resistance R

3. Bonding pad capacity C
resistance R

11 IKR 0.014 A
12 ISC 57.08 aA
13 NC 1.546 
14 RB 122.4 
15 IRB 0.000 A
16 RBM 52.45 
17 RE 1.511 
18 RC 15.12 
19
20
21

(1)
(1)
(1)

XTB 1.500 
EG 1.110 eV

XTI 3.000 
22 CJE 36.61 fF
23 VJE 900.0 mV
24 MJE 0.346 
25 TF 4.122 ps
26 XTF 68.20 
27 VTF 2.004 V
28 ITF 0.179 A

List of components (see Fig.14)

29 PTF 0.000 deg
30 CJC 16.21 fF

C

31 VJC 556.9 mV
32 MJC 0.207 
33 XCJC 0.500 
34
35
36
37

(1)
(1)
(1)
(1)

TR 00.00 ns

CJS 78.59 fF

VJS 418.3 mV

MJS 0.239 
38 FC 0.550 

be

C

cb

C

ce

L1 1.1 nH
L2 1.1 nH
L3 (note 1) 0.25 nH

Note

1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.

C

bp

R

sb1

R

sb2

in series with substrate

bp

between B and E.

sb1

in series with substrate

bp

between C and E.

sb2

145 fF
25 
19 

DESIGNATION VALUE UNIT

80 fF
2fF
80 fF

1998 Mar 11 9

NXP Semiconductors Product specification

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT343R

D

A

A

1

L

p

Q

detail X

c

H

E

E

v M

A

AB

0 1 2 mm

scale

X

21

43

Plastic surface-mounted package; reverse pinning; 4 leads SOT343R

w M

B

97-05-21
06-03-16

b

p

UNIT

A

1

max

b

p

cD

E

b

1

H

E

L

p

Qwv

mm

0.1

1.1

0.8

0.4

0.3

0.25

0.10

0.7

0.5

2.2

1.8

1.35

1.15

e

2.2

2.0

1.3

e

1

0.2y0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15

0.23

0.13

e

1

A

e

y

b

1

NPN 17 GHz wideband transistor BFG403W

PACKAGE OUTLINE

1998 Mar 11 10

NXP Semiconductors Product specification

NPN 17 GHz wideband transistor BFG403W

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the prod uc t specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

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Product specification  The information and data

provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.

DISCLAIMERS
Limited warranty and liability  Information in this

document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
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the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

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reserves the right to make changes to information
published in this document, including without limitation
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accepts no liability for inclusion and/or use of NXP
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Applications  Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.

1998 Mar 11 11

NXP Semiconductors Product specification

NPN 17 GHz wideband transistor BFG403W

NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.

Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.

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Semiconductors products are sold subject to the general
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Quick reference data  The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data
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In the event that customer uses the product for design-in
and use in automotive applications to automotive
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Semiconductors’ specifications such use shall be solely at
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the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.

No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights .

1998 Mar 11 12

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or cont ra ct, is b elieve d to be accurate and reliable and may be changed
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Printed in The Netherlands R77/04/pp13 Date of release: 1998Mar 11