Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
BFG35
NPN 4 GHz wideband transistor
Product specification
Supersedes data of 1995 Sep 12
1999 Aug 24
Page 2
NXP Semiconductors Product specification
Fig.1 SOT223.
4
123
MSB002 - 1
Top view
NPN 4 GHz wideband transistor BFG35
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
PINNING
PIN DESCRIPTION
1emitter
2base
3emitter
4 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
I
P
h
f
G
V
CEO
C
tot
FE
T
UM
o
collector-emitter voltage open base 18 V
DC collector current 150 mA
total power dissipation up to Ts=135C (note 1) 1W
DC current gain IC=100mA; VCE=10V; Tj=25C25 70
transition frequency IC=100mA; VCE=10V;
f=500MHz; T
amb
=25C
maximum unilateral power gain IC=100mA; VCE=10V;
f=500MHz; T
=100mA; VCE=10V;
I
C
f=800MHz; T
amb
amb
=25C
=25C
output voltage IC=100mA; VCE=10V;
= 60 dB; RL=75;
d
im
f
= 793.25 MHz; T
(p+qr)
amb
=25C
4 GHz
15 dB
11 dB
750 mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134) .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
collector-base voltage open emitter 25 V
collector-emitter voltage open base 18 V
emitter-base voltage open collector 2V
DC collector current 150 mA
total power dissipation up to Ts=135C (note 1) 1W
storage temperature 65 +150 C
junction temperature 175 C
is the temperature at the soldering point of the collector tab.
1999 Aug 24 2
Page 3
NXP Semiconductors Product specification
G
UM
10
s
21
2
1s
11
2
–1s
22
2
–
--------------------------------------------------------
dB.log=
NPN 4 GHz wideband transistor BFG35
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
V
o
d
2
thermal resistance from junction to soldering point up to Ts=135C (note 1) 40 K/W
is the temperature at the soldering point of the collector tab.
collector cut-off current IE=0; VCB=10V 1 A
DC current gain IC=100mA; VCE= 10 V 25 70
collector capacitance IE=ie=0; VCB=10V; f=1MHz 2 pF
emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz 10 pF
feedback capacitance IC=0; VCE=10V; f=1MHz 1.2 pF
transition frequency IC=100mA; VCE=10V;
amb
amb
amb
=25C
=25C
=25C
maximum unilateral power gain
(note 1)
f = 500 MHz; T
IC=100mA; VCE=10V;
f = 500 MHz; T
=100mA; VCE=10V;
I
C
f = 800 MHz; T
4 GHz
15 dB
11 dB
output voltage note 2 750 mV
note 3 800 mV
second order intermodulation
distortion
note 4 55 dB
note 5 57 dB
Notes
1. G
2. d
3. d
4. I
5. I
is the maximum unilateral power gain, assuming S12 is zero and
UM
= 60 dB (DIN 45004B); IC=100mA; VCE=10V; RL=75; T
im
V
V
V
measured at f
V
V
V
measured at f
V
f
V
f
at dim= 60 dB; fp=795.25MHz;
p=Vo
6dB; fq=803.25MHz;
q=Vo
6dB; fr=805.25MHz;
r=Vo
= 793.25 MHz.
(p+qr)
= 60 dB (DIN 45004B); IC=100mA; VCE=10V; RL=75; T
im
at dim= 60 dB; fp=445.25MHz;
p=Vo
6dB; fq=453.25MHz;
q=Vo
6dB; fr=455.25MHz;
r=Vo
= 443.25 MHz.
(p+qr)
=60mA; VCE=10V; RL=75;
C
p=Vq=Vo
=450MHz; fp=50MHz; fq=400MHz.
(p+q)
=60mA; VCE=10V; RL=75;
C
p=Vq=VO
=810MHz; fp=250MHz; fq=560MHz.
(p+q)
= 50 dBmV;
=50dBmV;
amb
amb
=25C
=25C
1999 Aug 24 3
Page 4
NXP Semiconductors Product specification
Fig.2 Intermodulation and second harmonic test circuit.
handbook, full pagewidth
MBB284
DUT
V
BB
C3
R1
L1C1
C2
L2
input
75
R2
L6
R3 R4
L3
C4
C7
C5
C6
L5
output
75
V
CC
L4
Ω
Ω
NPN 4 GHz wideband transistor BFG35
List of components (see test circuit)
DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627
C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108
C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103
L1 microstrip line 75 length 7mm;
width 2.5 mm
L2 microstrip line 75 length 22mm;
width 2.5 mm
L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;
winding pitch 1 mm
L4 microstripline 75 length 19 mm;
width 2.5 mm
L5 Ferroxcube choke 5 H 3122 108 20153
L6 (note 1) 0.4 mm copper wire 25 nH length 30 mm
R1 metal film resistor 10 k 2322 180 73103
R2 (note 1) metal film resistor 200 2322 180 73201
R3, R4 metal film resistor 27 2322 180 73279
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-cla d printed circuit board with PTFE dielectric (
thickness
1
inch; thickness of copper sheet
16
1
inch.
32
=2.2);
r
1999 Aug 24 4
Page 5
NXP Semiconductors Product specification
Fig.3 Intermodulation test circuit printed circuit board.
handbook, full pagewidth
MBB299
75
input
75
output
C6
C7
C5
L5
V
CC
V
BB
R1
C3
C1
C2
L1 L2
L4
R3
R2
R4
C4
L6
L3
Ω
Ω
handbook, full pagewidth
MBB298
80 mm
60 mm
handbook, full pagewidth
MBB297
NPN 4 GHz wideband transistor BFG35
1999 Aug 24 5
Page 6
NXP Semiconductors Product specification
Fig.4 Power derating curve.
handbook, halfpage
0 50 100 200
0.8
0.6
0.2
0
0.4
MBB336
150
T ( C)
o
s
P
tot
(W)
1.0
1.2
Fig.5 DC current gain as a function of collector
current.
VCE=10V; Tj=25C.
handbook, halfpage
0
120
80
40
0
40 80 160
MBB361
120
I (mA)
C
FE
h
Fig.6 Feedback capacitance as a function of
collector-emitter voltage.
IE= 0; f = 1 MHz; Tj=25C.
handbook, halfpage
0
3
2
1
0
420
MBB381
81216
V (V)
CE
C
re
(pF)
Fig.7 Transition frequency as a function of
collector current.
VCE=10V; f=500MHz; Tj=25C
handbook, halfpage
0 40 80 160
8
6
2
0
4
MBB357
120
I (mA)
C
(GHz)
T
f
NPN 4 GHz wideband transistor BFG35
1999 Aug 24 6
Page 7
NXP Semiconductors Product specification
Fig.8 Maximum unilateral power gain as a
function of frequency.
IC=100mA; VCE=10V; T
amb
=25C.
handbook, halfpage
40
0
20
30
10
MBB386
10
2
10
3
10
4
10
f (MHz)
G
UM
(dB)
Fig.9 Intermodulation distortion as a function of
collector current.
VCE=10V; Vo=800mV; f
(p+qr)
= 443.25 MHz; T
amb
=25C.
handbook, halfpage
MBB385
20 120
45
70
65
60
55
50
40 60 80 100
I (mA)
C
d
(dB)
im
Fig.10 Intermodulation distortion as a function of
collector current.
VCE=10V; Vo=750mV; f
(p+qr)
= 793.25 MHz; T
amb
=25C.
handbook, halfpage
MBB383
20 120
45
70
65
60
55
50
40 60 80 100
I (mA)
C
d
(dB)
im
Fig.11 Second order intermodulation distortion as
a function of collector current.
VCE=10V; Vo= 50 dBmV; f
(p+q)
= 450 MHz; T
amb
=25C.
handbook, halfpage
MBB382
20 120
45
70
65
60
55
50
40 60 80 100
I (mA)
C
d
(dB)
2
NPN 4 GHz wideband transistor BFG35
1999 Aug 24 7
Page 8
NXP Semiconductors Product specification
Fig.12 Second order intermodulation distortion as
a function of collector current.
VCE=10V; Vo= 50 dBmV; f
(p+q)
= 810 MHz; T
amb
=25C.
handbook, halfpage
MBB384
20 120
45
70
65
60
55
50
40 60 80 100
I (mA)
C
d
(dB)
2
NPN 4 GHz wideband transistor BFG35
1999 Aug 24 8
Page 9
NXP Semiconductors Product specification
Fig.13 Common emitter input reflection coefficient (S11).
IC=100mA; VCE=10V; T
amb
=25C; Zo=50.
handbook, full pagewidth
MBB380
10
25
50
100
250
10
25
50
100
250
0
+ j
– j
0
3 GHz
10 25 50 100 250
Fig.14 Common emitter forward transmission coefficient (S21).
IC=100mA; VCE=10V; T
amb
=25C.
handbook, full pagewidth
MBB286
0
o
30
o
60
o
90
o
120
o
150
o
180
o
150
o
120
o
90
o
60
o
30
o
40 203050 10
NPN 4 GHz wideband transistor BFG35
1999 Aug 24 9
Page 10
NXP Semiconductors Product specification
Fig.15 Common emitter reverse transmission coefficient (S12).
IC=100mA; VCE=10V; T
amb
=25C.
handbook, full pagewidth
MBB285
0
o
30
o
60
o
90
o
120
o
150
o
180
o
150
o
120
o
90
o
60
o
30
o
0.20.1 0.3 0.4 0.5 0.6
Fig.16 Common emitter output reflection coefficient (S22).
IC=100mA; VCE=10V; T
amb
=25C; Zo=50.
handbook, full pagewidth
MBB379
10
25
50
100
250
10
25
50
100
250
0
+ j
– j
0
10 50 100 25025
3 GHz
NPN 4 GHz wideband transistor BFG35
1999 Aug 24 10
Page 11
NXP Semiconductors Product specification
UNIT A1b
p
cD
E
e1HELpQywv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73
04-11-10
06-03-16
w M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v M
A
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface-mounted package with increased heatsink; 4 leads SOT223
NPN 4 GHz wideband transistor BFG35
PACKAGE OUTLINE
1999 Aug 24 11
Page 12
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
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Applications Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
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Customers are responsible for the design and operation of
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
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party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.
1999 Aug 24 12
Page 13
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
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products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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1999 Aug 24 13
Page 14
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Printed in The Netherlands R77/03/pp14 Date of release: 1999 Aug 24
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