Philips bfg310_xr Datasheet

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Page 1

BFG310/XR

NPN 14 GHz wideband transistor

Rev. 01 — 2 February 2005 Product data sheet

1. Product proﬁle

1.1 General description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.

1.2 Features

■ High power gain

■ Low noise ﬁgure

■ High transition frequency

■ Gold metallization ensures excellent reliability

1.3 Applications

■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as:

◆ analog and digital cellular telephones

◆ cordless telephones (Cordless Telephone (CT), Personal Communication

Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)

◆ radar detectors

◆ pagers

◆ Satellite Antenna TeleVision (SATV) tuners

◆ repeater ampliﬁers in ﬁber-optic systems

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V V I P h

CBO CEO

tot

CBS

collector-base voltage open emitter - - 15 V collector-emitter voltage open base - - 6 V collector current (DC) - - 10 mA total power dissipation Tsp≤ 145 °C DC current gain IC= 5 mA; VCE=3V;

=25°C

collector-base capacitance

transition frequency IC= 5 mA; VCE=3V;

VCB= 5 V; f = 1 MHz; emitter grounded

f = 1 GHz; T

amb

=25°C

[1]

--60mW 60 100 200

- 0.17 0.3 pF

- 14 - GHz

Page 2

Philips Semiconductors

BFG310/XR

NPN 14 GHz wideband transistor

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

MSG maximum stable gain IC= 5 mA; VCE=3V;

insertion power gain IC= 5 mA; VCE=3V;

NF noise ﬁgure Γ

[1] Tsp is the temperature at the soldering point of the collector pin.

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 collector 2 emitter 3 base 4 emitter

…continued

f = 1.8 GHz; T

f = 1.8 GHz; T Z

S=ZL

= Γ

opt

=3V; f=2GHz

amb

=50Ω

; IC= 1 mA;

=25°C

=25°C;

-18-dB

-14-dB

-1-dB

2, 4

sym086

3. Ordering information

Table 3: Ordering information

Type number Package

BFG310/XR SC-61AA plastic surface mounted package; reverse pinning;

4. Marking

Table 4: Marking codes

Type number Marking code

BFG310/XR S1*

[1] * = p: made in Hong Kong.

Name Description Version

SOT143R

4 leads

[1]

Product data sheet Rev. 01 — 2 February 2005 2 of 12

Page 3

Philips Semiconductors

BFG310/XR

NPN 14 GHz wideband transistor

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

[1] Tsp is the temperature at the soldering point of the collector pin.

collector-base voltage open emitter - 15 V collector-emitter voltage open base - 6 V emitter-base voltage open collector - 2 V collector current (DC) - 10 mA total power dissipation Tsp≤ 145 °C

[1]

-60mW storage temperature −65 +175 °C junction temperature - 175 °C

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-sp)

[1] Tsp is the temperature at the soldering point of the collector pin.

thermal resistance from junction to solder point Tsp≤ 145 °C

[1]

530 K/W

7. Characteristics

Table 7: Characteristics

Tj=25°C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

CBO

CBS

CES

EBS

MSG maximum stable gain I

NF noise ﬁgure Γ P

L(1dB)

IP3 third order intercept point I

collector-base cut-off current IE= 0 A; VCB=5V --15nA DC current gain IC= 5 mA; VCE = 3 V 60 100 200 collector-base capacitance VCB= 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF collector-emitter capacitance VCE= 5 V; f = 1 MHz; base grounded - 0.28 - pF emitter-base capacitance VEB= 0.5 V; f = 1 MHz; collector grounded - 0.22 - pF transition frequency IC= 5 mA; VCE= 3 V; f = 1 GHz;

=25°C

amb

= 5 mA; VCE= 3 V; f = 1.8 GHz;

=25°C

amb

insertion power gain IC= 5 mA; VCE=3V; T

S=ZL

=50Ω

amb

=25°C;

- 14 - GHz

-18-dB

f = 1.8 GHz - 14 - dB f = 3 GHz - 11 - dB

= Γ

; IC= 1 mA; VCE= 3 V; f = 2 GHz - 1 - dB

opt

output power at 1 dB gain compression

IC= 5 mA; VCE= 3 V; f = 1.8 GHz; T

=25°C; ZS=ZL=50Ω

amb

= 5 mA; VCE= 3 V; f = 1.8 GHz;

=25°C; ZS=ZL=50Ω

amb

- 1.8 - dBm

- 8.5 - dBm

Product data sheet Rev. 01 — 2 February 2005 3 of 12

Page 4

Philips Semiconductors

BFG310/XR

NPN 14 GHz wideband transistor

tot

(mW)

0 20015050 100

001aac169

Tsp (°C)

(mA)

0653142

IB = 120 µA

100 µA

80 µA

60 µA

40 µA

20 µA

VCE (V)

Fig 1. Power derating curve Fig 2. Collector current as a function of

collector-emitter voltage; typical values

001aac171

(dB)

MSG

(pF)

0.20

CBS

0.19

001aac170

001aac172

0.18

0.17

0.16

0.15 054231

VCB (V)

IC= 0 mA; f = 1 MHz. IC= 5 mA; VCE=3V.

Fig 3. Collector-base capacitance as a function of

collector-base voltage; typical values

10 10

f (MHz)

Fig 4. Gain as a function of frequency; typical values

Product data sheet Rev. 01 — 2 February 2005 4 of 12

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Philips Semiconductors

BFG310/XR

NPN 14 GHz wideband transistor

90°

−2

45°135°

−5

−45°−135°

001aac173

180°

+0.5

+0.2

−0.2

0.50.2

3 GHz 40 MHz

−0.5

−1

−90°

VCE=3V; IC= 5 mA; Zo=50Ω.

Fig 5. Common emitter input reﬂection coefﬁcient (s11); typical values

90°

1.0

0.8

0.6

0.4

0.2

0°

1.0

45°135°

3 GHz

20 16 12 8 4

180°

40 MHz

−90°

0°

−45°−135°

001aac174

VCE=3V; IC= 5 mA.

Fig 6. Common emitter forward transmission coefﬁcient (s21); typical values

Product data sheet Rev. 01 — 2 February 2005 5 of 12

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Philips Semiconductors

0.5 0.4 0.3 0.2 0.1

180°

90°

40 MHz

BFG310/XR

NPN 14 GHz wideband transistor

45°135°

3 GHz

0°

−45°−135°

−90°

001aac175

VCE=3V; IC= 5 mA.

Fig 7. Common emitter reverse transmission coefﬁcient (s12); typical values

90° +1

−2

40 MHz

−45°−135°

45°135°

−5

001aac176

0°

180°

+0.5

+0.2

−0.2

0.50.2

−0.5

−1

−90°

3 GHz

1.0

0.8

0.6

0.4

0.2

1.0

VCE=3V; IC= 5 mA; Zo=50Ω.

Fig 8. Common emitter output reﬂection coefﬁcient (s22); typical values

Product data sheet Rev. 01 — 2 February 2005 6 of 12

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Philips Semiconductors

8. Application information

Table 8: SPICE parameters of the BFG310 DIE

Sequence Parameter Value Unit

1 IS 16.17 aA 2 BF 210 3NF 14 VAF 50 V 5 IKF 59.83 mA 6 ISE 1.726 fA 7 NE 2.114 8BR 69NR 110 VAR 2.3 V 11 IKR 10 A 12 ISC 0 aA 13 NC 1.5 14 RB 3.6 Ω 15 RE 2.1 Ω 16 RC 1.6 Ω 17 CJE 115.6 fF 18 VJE 866.3 mV 19 MJE 0.285 20 CJC 68.18 fF 21 VJC 601 mV 22 MJC 0.123 23 XCJC 1 24 FC 0.7 25 TF 8.3 ps 26 XTF 10 27 VTF 1000 V 28 ITF 150 mA 29 PTF 0 deg 30 TR 0 ns 31 KF 0 32 AF 1 33 TNOM 25 °C 34 EG 1.014 eV 35 XTB 0 36 XTI 8 37 Q1.AREA 1 -

BFG310/XR

NPN 14 GHz wideband transistor

Product data sheet Rev. 01 — 2 February 2005 7 of 12

Page 8

Philips Semiconductors

BFG310/XR

NPN 14 GHz wideband transistor

C_base_pad

BJT1

C_emitter_pad

CHIP

Fig 9. Package equivalent circuit of SOT143R

Table 9: List of components; see

Figure 9

Designation Value Unit

17 fF 84 fF

191 fF C_base_pad 67 fF C_emitter_pad 142 fF L

0.95 nH

0.40 nH

0.12 nH

0.21 nH

0.06 nH

001aac155

Product data sheet Rev. 01 — 2 February 2005 8 of 12

Page 9

Philips Semiconductors

BFG310/XR

NPN 14 GHz wideband transistor

9. Package outline

Plastic surface mounted package; reverse pinning; 4 leads SOT143R

w M

v M

detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.9

OUTLINE

VERSION

SOT143R SC-61AA

max

0.1

0.88

0.78

0.15

0.09

0.48

0.38

IEC JEDEC JEITA

3.0

1.4

2.8

1.2

REFERENCES

1.9

1.7

2.5

2.1

0.55

0.25

0.45

0.25

EUROPEAN

PROJECTION

ywvQ

0.1 0.10.2

ISSUE DATE

99-09-13 04-11-16

Fig 10. Package outline SOT143R (SC-61AA)

Product data sheet Rev. 01 — 2 February 2005 9 of 12

Page 10

Philips Semiconductors

NPN 14 GHz wideband transistor

BFG310/XR

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BFG310_XR_1 20050202 Product data sheet - 9397 750 14244 -

Product data sheet Rev. 01 — 2 February 2005 10 of 12

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Philips Semiconductors

11. Data sheet status

BFG310/XR

NPN 14 GHz wideband transistor

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representationor warranty that such applicationswill be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes norepresentations orwarranties thatthese products are free frompatent, copyright, ormask work right infringement, unless otherwise speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 01 — 2 February 2005 11 of 12

Page 12

Philips Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Application information. . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information . . . . . . . . . . . . . . . . . . . . 11

BFG310/XR

NPN 14 GHz wideband transistor

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 2 February 2005

Document number: 9397 750 14244