Page 1
DATA SH EET
M3D123
BFG25AW; BFG25AW/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Sep 23
Page 2
NXP Semiconductors Product specification
Fig.1 SOT343N.
Top view
MBK523
21
34
NPN 5 GHz wideband transistors
FEATURES
Low current consumption
(100 Ato1mA)
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
PINNING
PIN DESCRIPTION
BFG25AW
1 collector
2base
3emitter
4emitter
BFG25AW/X
1 collector
2emitter
3base
4emitter
BFG25AW;
BFG25AW/X
MARKING
TYPE NUMBER CODE
BFG25AW N6
BFG25AW/X V1
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
C
f
G
CBO
CEO
C
tot
FE
re
T
UM
collector-base voltage open emitter 8V
collector-emitter voltage open base 5V
collector current (DC) 6.5 mA
total power dissipation Ts 85 C 500 mW
DC current gain IC= 0.5 mA; VCE=1V 50 80 200
feedback capacitance IC=0; VCE=1V; f=1MHz 0.2 0.3 pF
transition frequency IC=1mA; VCE= 1 V; f =500 MHz; T
maximum unilateral
IC= 0.5 mA; VCE=1V; f=1GHz; T
=25C3.5 5 GHz
amb
=25C 16 dB
amb
power gain
F noise figure
; IC=1mA; VCE=1V; f=1GHz 2 dB
sopt
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
CBO
CEO
EBO
C
tot
stg
j
collector-base voltage open emitter 8V
collector-emitter voltage open base 5V
emitter-base voltage open collector 2V
collector current (DC) 6.5 mA
total power dissipation Ts 85 C; see Fig.2; note 1 500 mW
storage temperature 65 +150 C
junction temperature 175 C
Note
1. T
is the temperature at the soldering point of the collector pin.
s
1998 Sep 23 2
Page 3
NXP Semiconductors Product specification
G
UM
10
S
21
2
1S
11
2
–1S
22
2
–
----------------------------------------------------------
dB.log=
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
F noise figure
thermal resistance from jun ction to soldering point Ts 85 C; note 1 180 K/W
is the temperature at the soldering point of the collector pin.
collector-base breakdown volt a ge IC=100A; IE=0 8V
collector-emitter breakdown voltage IC=1mA; IB=0 5V
emitter-base breakdown voltage IE=100A; IC=0 2V
collector leakage current open emitter; VCB=5V; IE=0 50 nA
DC current gain IC=0.5mA; VCE= 1 V 50 80 200
feedback capacitance IC=0; VCE=1V; f=1MHz 0.2 0.3 pF
transition frequency IC=1mA; VCE= 1 V; f = 1 GHz;
=25C
T
amb
maximum unilateral power gain;
note 1
IC=0.5mA; VCE=1V;
f=1GHz; T
=0.5mA; VCE=1V;
I
C
f=2GHz; T
; IC= 0.5 mA; VCE=1V;
sopt
amb
amb
=25C
=25C
3.5 5 GHz
16 dB
8 dB
1.9 dB
f=1GHz
sopt
; IC=1mA; VCE=1V;
2dB
f=1GHz
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero.
UM
1998 Sep 23 3
Page 4
NXP Semiconductors Product specification
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
400
0
MBG248
150
T ( C)
o
s
P
tot
(mW)
600
200
VCE=1V.
Fig.3 DC current gain as a function of collector
current; typical values.
handbook, halfpage
10
0
MCD138
110
1
10
2
10
3
40
100
h
FE
I (mA)
C
20
80
60
IC=0; f=1MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
MLB971
0246
0.3
0
0.2
V (V)
CE
C
re
(pF)
0.1
Fig.5 Transition freque ncy as a function of
collector current; typical values.
f=500MHz; VCE=1V; T
amb
=25C.
handbook, halfpage
0
23
14
6
2
0
4
MLB972
(GHz)
T
f
I (mA)
C
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
1998 Sep 23 4
Page 5
NXP Semiconductors Product specification
f=500MHz; VCE=1V.
Fig.6 Gain as a function of collector current;
typical values.
handbook, halfpage
0
30
20
10
0
1
2
MLB973
3
gain
(dB)
I (mA)
C
G
UM
MSG
f=1GHz; VCE=1V.
Fig.7 Gain as a function of collector current;
typical values.
handbook, halfpage
0
30
20
10
0
1
2
MLB974
3
gain
(dB)
I (mA)
C
MSG
G
UM
IC= 0.5 mA; VCE=1V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, halfpage
50
0
10
MLB975
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
Fig.9 Gain as a function of freq uency;
typical values.
IC=1mA; VCE=1V.
handbook, halfpage
50
0
10
MLB976
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
1998 Sep 23 5
Page 6
NXP Semiconductors Product specification
Fig.10 Minimum noise figure as a function
of collector current; typical values.
VCE=1V.
handbook, halfpage
4
2
1
0
3
MCD145
10
−1
110
F
(dB)
IC (mA)
f = 2 GHz
1 GHz
500 MHz
Fig.11 Minimum noise figure as a function of
frequency; typical values.
VCE=1V.
handbook, halfpage
4
2
1
0
3
MCD146
10
2
10
4
10
3
F
(dB)
f (MHz)
IC = 2 mA
1 mA
0.5 mA
Fig.12 Common emitter noise figure circles; typical values.
f=500MHz; VCE=1V; IC=1mA; Zo=50
handbook, full pagewidth
MLB977
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
5
F = 5 dB
F = 4 dB
F = 3 dB
F = 1.9 dB
min
opt
Γ
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
1998 Sep 23 6
Page 7
NXP Semiconductors Product specification
Fig.13 Common emitter noise figure circles; typical values.
f=1GHz; VCE=1V; IC=1mA; Zo=50
handbook, full pagewidth
MLB978
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
F = 5 dB
F = 4 dB
F = 3 dB
opt
Γ
F = 2.0 dB
min
5
stability
circle
f=2GHz; VCE=1V; IC=1mA; Zo=50
Fig.14 Common emitter noise figure circles; typical values.
handbook, full pagewidth
MLB979
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
1
0.5
0
0.2
0.5
1
2
5
0.2 0.5 2
F = 5 dB
F = 4 dB
F = 3 dB
opt
Γ
F = 2.4 dB
min
0.2
1 5
5
2
stability
circle
unstable
region
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
1998 Sep 23 7
Page 8
NXP Semiconductors Product specification
VCE=1V; IC=1mA; Zo=50.
Fig.15 Common emitter input reflection coefficient (S11); typical values.
handbook, full pagewidth
MLB980
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
1
0.5
0
0.2
0.5
1
2
5
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
VCE=1V; IC=1mA.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
handbook, full pagewidth
MLB981
0
o
90
o
135
o
180
o
90
o
5 4 3 2 1
45
o
135
o
45
o
40 MHz
3 GHz
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
1998 Sep 23 8
Page 9
NXP Semiconductors Product specification
VCE=1V; IC=1mA.
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
handbook, full pagewidth
MLB982
0
o
90
o
135
o
180
o
90
o
0.5 0.4 0.3 0.2 0.1
45
o
135
o
45
o
40 MHz
3 GHz
Fig.18 Common emitter output reflection coefficient (S22); typical values.
VCE=1V; IC=1mA; Zo=50
handbook, full pagewidth
MLB983
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
1
0.5
0
0.2
0.5
1
2
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
5
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
1998 Sep 23 9
Page 10
NXP Semiconductors Product specification
QLB= 50; QLE= 50; QL
B,E
(f) = QL
B,E
(f/fc);
f
c
= scaling frequency = 1 GHz.
Fig.19 Package equivalent circuit SOT343N.
handbook, halfpage
MBC964
B
E
CB' C'
E'
L
B
L
E
L3
L1 L2
C
cb
C
be ce
C
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
SPICE parameters for the BFG25W crystal
SEQUENCE No. PARAMETER VALUE UN IT
1 IS 13.77 aA
2 BF 85.65
3 NF 0.980
4 VAF 50.80 V
5 IKF 10.00 A
6 ISE 2.199 fA
7 NE 1.857
8 BR 16.97
9 NR 0.986
10 VAR 2.491 V
11 IKR 188.0 mA
12 ISC 205.1 aA
13 NC 1.107
14 RB 80.00
15 IRB 1.000 A
16 RBM 80.00
17 RE 7.911
18 RC 5.300
19
20
21
(1)
(1)
(1)
XTB 0.000
EG 1.110 eV
XTI 3.000
22 CJE 223.0 fF
23 VJE 669.7 mV
24 MJE 0.060
25 TF 5.112 ps
26 XTF 7.909
27 VTF 1.338 V
28 ITF 5.662 mA
29 PTF 15.37 deg
30 CJC 229.0 fF
31 VJC 394.7 mV
32 MJC 0.043
33 XCJC 0.050
34 TR 13.26 ns
35
(1)
CJS 0.000 F
SEQUENCE No. PARAMETER VALUE UNIT
(1)
36
37
(1)
VJS 750.0 mV
MJS 0.000
38 FC 0.988
Note
1. These parameters have not been extr a cted, the
default values are shown.
List of components (see Fig.19)
DESIGNATION VALUE UNIT
C
be
C
cb
C
ce
70 fF
50 fF
115 fF
L1 0.34 nH
L2 0.10 nH
L3 0.25 nH
L
B
L
E
0.40 nH
0.40 nH
1998 Sep 23 10
Page 11
NXP Semiconductors Product specification
UNIT
A
1
max
b
p
cD
E
b
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
0.7
0.5
2.2
1.8
1.35
1.15
e
2.2
2.0
1.3
e
1
0.2y0.10.21.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
SOT343N
D
e
1
A
A
1
L
p
Q
detail X
c
H
E
E
v M
A
AB
0 1 2 mm
scale
A
X
12
34
Plastic surface-mounted package; 4 leads SOT343N
e
w M
B
97-05-21
06-03-16
b
p
y
b
1
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
PACKAGE OUTLINES
1998 Sep 23 11
Page 12
NXP Semiconductors Product specification
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specificat ion for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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Limited warranty and liability Information in this
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However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
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removal or replacement of any products or rework
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for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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Applications Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.
1998 Sep 23 12
Page 13
NXP Semiconductors Product specification
NPN 5 GHz wideband transistors BFG25AW; BFG25A W/X
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
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customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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Quick reference data The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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In the event that customer uses the product for design-in
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1998 Sep 23 13
Page 14
NXP Semiconductors
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drawings which were updated to the latest version.
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Printed in The Netherlands R77/03/pp14 Date of release: 1998Sep 23
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