Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
BFG135
NPN 7GHz wideband transistor
Product specification 1995 Sep 13
Page 2
NXP Semiconductors Product specification
Fig.1 SOT223.
4
123
MSB002 - 1
Top view
NPN 7GHz wideband transistor BFG135
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
PINNING
PIN DESCRIPTION
1emitter
2base
3emitter
4 collector
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
f
G
V
CBO
CEO
C
tot
FE
T
UM
o
collector-base voltage open emitter 25 V
collector-emitter voltage open base 15 V
DC collector current 150 mA
total power dissipation up to Ts=145C (note 1) 1W
DC current gain IC=100mA; VCE=10V; Tj=25C80 130
transition frequency IC=100mA; VCE=10V; f=1GHz;
=25C
T
amb
maximum unilateral power
gain
IC=100mA; VCE= 10 V; f = 500 MHz;
=25C
T
amb
I
=100mA; VCE= 10 V; f = 800 MHz;
C
=25C
T
amb
output voltage dim= 60 dB; IC= 100 mA; VCE=10V;
=75; T
R
L
f
(p+qr)
= 793.25 MHz
amb
=25C;
7 GHz
16 dB
12 dB
850 mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134) .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
CBO
CEO
EBO
C
tot
stg
j
collector-base voltage open emitter 25 V
collector-emitter voltage open base 15 V
emitter-base voltage open collector 2V
DC collector current 150 mA
total power dissipation up to Ts=145C (note 1) 1W
storage temperature 65 150 C
junction temperature 175 C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
1995 Sep 13 2
Page 3
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS
R
th j-s
thermal resistance from junction to soldering
up to Ts=145C (note1) 30K/W
THERMAL
RESISTANCE
point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
T
=25C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
C
C
C
f
T
G
V
FE
c
e
re
UM
o
collector cut-off current IE=0; VCB=10V 1 A
DC current gain IC= 100 mA; VCE= 10 V 80 130
collector capacitance IE=ie=0; VCB=10V; f=1MHz 2 pF
emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz 7 pF
feedback capacitance IC=0; VCE=10V; f=1MHz 1.2 pF
transition frequency IC= 100 mA; VCE= 10 V; f = 1 GHz;
=25C
T
amb
maximum unilateral power
gain
IC= 100 mA; VCE=10V;
f=500MHz; T
I
= 100 mA; VCE=10V;
C
f=800MHz; T
amb
amb
=25C
=25C
7 GHz
16 dB
12 dB
output voltage note 1 900 mV
note 2 850 mV
d
2
second order intermodulati on
distortion
IC=90mA; VCE=10V;
V
=50dBmV; T
O
=450MHz;
f
(p+q)
=50MHz; fq=400MHz
f
p
=90mA; VCE=10V;
I
C
V
=50dBmV; T
O
=810MHz;
f
(p+q)
=250MHz; fq=560MHz
f
p
amb
amb
=25C;
=25C;
58 dB
53 dB
Notes
1. d
= 60 dB (DIN 45004B); IC=100mA; VCE=10V; RL=75; T
im
V
p=Vo
V
q=Vo
V
r=Vo
measured at f
2. d
= 60 dB (DIN 45004B); IC=100mA; VCE=10V; RL=75; T
im
V
p=Vo
V
q=Vo
V
r=Vo
measured at f
at dim= 60 dB; fp=445.25MHz;
6dB; fq=453.25MHz;
6dB; fr=455.25MHz;
= 443.25 MHz.
(p+qr)
at dim= 60 dB; fp=795.25MHz;
6dB; fq=803.25MHz;
6dB; fr=805.25MHz;
= 793.25 MHz.
(p+qr)
amb
amb
=25C;
=25C;
1995 Sep 13 3
Page 4
NXP Semiconductors Product specification
Fig.2 Intermodulation distortion and second order intermodula tio n distortion test circuit.
handbook, full pagewidth
MBB284
DUT
V
BB
C3
R1
L1C1
C2
L2
input
75
R2
L6
R3 R4
L3
C4
C7
C5
C6
L5
output
75
V
CC
L4
Ω
Ω
NPN 7GHz wideband transistor BFG135
List of components (see test circuit)
DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO.
C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627
C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108
C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103
L1 microstripline 75 length 7 mm;
width 2.5 mm
L2 microstripline 75 length 22mm;
width 2.5 mm
L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;
winding pitch 1 mm
L4 microstripline 75 length 19 mm;
width 2.5 mm
L5 Ferroxcube choke 5 H 3122 108 20153
L6 (note 1) 0.4 mm copper wire 25 nH length 30 mm
R1 metal film resistor 10 k 2322 180 73103
R2 (note 1) metal film resistor 200 2322 180 73201
R3, R4 metal film resistor 27 2322 180 73279
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-cla d printed circuit board with PTFE dielectric (
1
inch; thickness of copper sheet
16
1
inch.
32
= 2.2); thickness
r
1995 Sep 13 4
Page 5
NXP Semiconductors Product specification
Fig.3 Intermodulation distortion test printed-circuit board.
handbook, full pagewidth
MBB299
75
input
75
output
C6
C7
C5
L5
V
CC
V
BB
R1
C3
C1
C2
L1 L2
L4
R3
R2
R4
C4
L6
L3
Ω
Ω
MBB298
80 mm
60 mm
handbook, full pagewidth
MBB297
NPN 7GHz wideband transistor BFG135
1995 Sep 13 5
Page 6
NXP Semiconductors Product specification
Fig.4 Power derating curve.
handbook, halfpage
0 50 100 200
0.8
0.6
0.2
0
0.4
MBB300
150
T ( C)
o
s
P
tot
(W)
1.0
1.2
Fig.5 DC current gain as a function of collector
current.
handbook, halfpage
0
160
120
80
40
40 80 160
MBB294
120
I (mA)
C
FE
h
VCE=10V; Tj=25C.
Fig.6 Feedback capacitance as a function of
collector-base voltage.
IE= 0; f= 1 MHz; Tj=25C.
handbook, halfpage
0
3
2
1
0
420
MBB295
81216
V (V)
CB
C
re
(pF)
Fig.7 Transition frequency as a function of
collector current.
VCE=10V; f=1GHz; T
amb
=25C.
handbook, halfpage
0 40 80 160
8
6
2
0
4
MBB296
120
I (mA)
C
(GHz)
T
f
NPN 7GHz wideband transistor BFG135
1995 Sep 13 6
Page 7
NXP Semiconductors Product specification
Fig.8 Intermodulation dis tortion as a function of
collector current.
VCE=10V; Vo=900mV; T
amb
=25C;
f
(p+qr)
=443.25MHz.
handbook, halfpage
20 120
45
70
65
MBB292
60
55
50
40 60 80 100
I (mA)
C
d
(dB)
im
Fig.9 Intermodulation distortion as a function of
collector current.
VCE=10V; Vo=850mV; T
amb
=25C;
f
(p+qr)
=793.25MHz.
handbook, halfpage
20 120
45
70
65
MBB293
60
55
50
40 60 80 100
I (mA)
C
d
(dB)
im
Fig.10 Second order intermodulation distortion as
a function of collector current.
VCE=10V; Vo= 50 dBmV; T
amb
=25C;
f
(p+q)
= 450 MHz.
handbook, halfpage
20 120
45
70
65
MBB291
60
55
50
40 60 80 100
d
2
(dB)
I (mA)
C
Fig.11 Second order intermodulation distortion as
a function of collector current.
VCE=10V; Vo= 50 dBmV; T
amb
=25C
f
(p+q)
= 810 MHz.
handbook, halfpage
20 120
45
70
65
MBB290
60
55
50
40 60 80 100
d
2
(dB)
I (mA)
C
NPN 7GHz wideband transistor BFG135
1995 Sep 13 7
Page 8
NXP Semiconductors Product specification
Fig.12 Load impedance as a function of output
power.
VCE=7.5V; f=900MHz.
handbook, halfpage
0 0.25 1.0
–10
0
20
MEA951
0.50
P
OUT
(W)
10
30
0.75
40
Z
(Ω)
L
50
60
R
L
X
L
Fig.13 Load impedance as a function of output
power.
VCE=10V; f=900MHz.
handbook, halfpage
0
0.5
0
10
30
MEA952
1
P
OUT
(W)
20
40
1.5
50
Z
(Ω)
L
R
L
X
L
Fig.14 Load impedance as a function of output
power.
VCE= 12.5 V; f = 900 MHz.
handbook, halfpage
0
0.5
0
10
30
MEA953
1
P
OUT
(W)
20
40
1.5
60
Z
(Ω)
L
R
L
X
L
50
Fig.15 Input impedance as a function of output
power.
VCE=7.5V; f=900MHz.
handbook, halfpage
0 0.25 1.0
0
2
6
MEA948
0.50
P
OUT
(W)
4
8
0.75
10
Z
(Ω)
i
r
i
x
i
NPN 7GHz wideband transistor BFG135
1995 Sep 13 8
Page 9
NXP Semiconductors Product specification
Fig.16 Input impedance as a function of output
power.
VCE=10V; f=900MHz.
handbook, halfpage
0
1.5
0
2
6
MEA949
0.5
P
OUT
(W)
4
8
1
10
Z
(Ω)
i
r
i
x
i
Fig.17 Input impedance as a function of output
power.
VCE= 12.5 V; f = 900 MHz.
handbook, halfpage
0 1.5
0
2
6
MEA950
0.5
P
OUT
(W)
4
8
1
10
Z
(Ω)
i
r
i
x
i
Fig.18 Efficiency as a function of output power.
f=900MHz.
handbook, halfpage
0 0.5 1.5
40
50
70
MEA947
1
η
(%)
P
OUT
(W)
V =
CE
12.5 V
60
80
10 V
7.5 V
Fig.19 Output power as a function of input power.
f=900MHz.
handbook, halfpage
0 100 300
1.5
0
0.5
1
MEA945
200
P
OUT
(W)
PIN(mW)
V =
CE
12.5 V
10 V
7.5 V
NPN 7GHz wideband transistor BFG135
1995 Sep 13 9
Page 10
NXP Semiconductors Product specification
Fig.20 Power gain as a function of output power.
f=900MHz.
handbook, halfpage
0 0.5 1.5
10
0
2
6
MEA946
1
G
p
(dB)
P
OUT
(W)
V =
CE
12.5 V
10 V
7.5 V
4
8
Fig.21 Maximum unilateral power gain as a
function of frequency.
IC=100mA; VCE=10V; T
amb
=25C.
handbook, halfpage
40
0
20
30
10
MBB289
10
2
10
3
10
4
10
f (MHz)
G
UM
(dB)
NPN 7GHz wideband transistor BFG135
1995 Sep 13 10
Page 11
NXP Semiconductors Product specification
Fig.22 Common emitter input reflection coefficient (S11).
IC=100mA; VCE=10V; T
amb
=25C; Zo=50.
handbook, full pagewidth
10
25
50
100
250
10
25
50
100
250
0
+ j
– j
MBB288
∞
10 25 50 100 250
Fig.23 Common emitter forward transmission coefficient (S21).
IC=100mA; VCE=10V; T
amb
=25C.
handbook, full pagewidth
MBB286
0
o
30
o
60
o
90
o
120
o
150
o
180
o
150
o
120
o
90
o
60
o
30
o
40 203050 10
NPN 7GHz wideband transistor BFG135
1995 Sep 13 11
Page 12
NXP Semiconductors Product specification
Fig.24 Common emitter reverse transmission coefficient (S12).
IC=100mA; VCE=10V; T
amb
=25C.
handbook, full pagewidth
MBB285
0
o
30
o
60
o
90
o
120
o
150
o
180
o
150
o
120
o
90
o
60
o
30
o
0.20.1 0.3 0.4 0.5 0.6
Fig.25 Common emitter output reflection coefficient (S22).
IC=100mA; VCE=10V; T
amb
=25C; Zo=50.
handbook, full pagewidth
10
25
50
100
250
10
25
50
100
250
0
+ j
– j
MBB287
∞
10 25 50 100 250
NPN 7GHz wideband transistor BFG135
1995 Sep 13 12
Page 13
NXP Semiconductors Product specification
UNIT A1b
p
cD
E
e1HELpQywv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73
04-11-10
06-03-16
w M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v M
A
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface-mounted package with increased heatsink; 4 leads SOT223
NPN 7GHz wideband transistor BFG135
PACKAGE OUTLINE
1995 Sep 13 13
Page 14
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication he reof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications wher e failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inc l usion and/or use is at
the customer’s own risk.
Applications Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.
1995 Sep 13 14
Page 15
NXP Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In cas e an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with auto motive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from cus tom er d esign and use o f
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights .
1995 Sep 13 15
Page 16
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and relia ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R77/03/pp16 Date of release: 1995 Sep 13
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