Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
BFG10W/X
UHF power transistor
Product specification 1995 Sep 22
Page 2
NXP Semiconductors Product specification
Fig.1 SOT343N.
Marking code: T5.
Top view
MBK523
21
34
UHF power transistor BFG10W/X
FEATURES
High efficiency
Small size discrete power amplifier
900 MHz and 1.9 GHz operating
areas
Gold metallization ensures
excellent reliability.
APPLICATIONS
Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
QUICK REFERENCE DATA
RF performance at T
=25C in a common-emitter test circuit.
amb
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 2; t
Pulsed, class-AB, duty cycle: < 1 : 8; t
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343N package.
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3base
4 emitter
f
(GHz)
= 10 ms 1.9 3.6 200 5 50
p
=4.6ms 0.9 6 650 10 50
p
V
(V)
CE
P
L
(mW)
G
(dB)
p
0.9 6 360 12.5 50
(%)
c
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134) .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage open emitter 20 V
collector-emitter voltage open base 10 V
emitter-base voltage open collector 2.5 V
collector current (DC) 250 mA
average collector current 250 mA
total power dissipation up to Ts=102C; note 1 400 mW
storage temperature 65 +150 C
junction temperature 175 C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to
soldering point
up to Ts=102C; note 1;
P
=400mW
tot
180 K/W
Note to the Limiting values and Thermal characteristics
is the temperature at the soldering point of the collector pin.
1. T
s
1995 Sep 22 2
Page 3
NXP Semiconductors Product specification
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
handbook, full pagewidth
MBG431
10
−5
10
−6
10
−4
10
−3
10
−2
10
−1
1
10
3
10
2
10
1
Z
th j-a
(K/W)
tp (s)
δ = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
t
p
T
P
t
t
p
T
δ
=
UHF power transistor BFG10W/X
CHARACTERISTICS
T
=25C (unless otherwise specified).
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown volt a ge open emitter; IC=0.1mA 20 V
collector-emitter breakdown voltage open base; IC=5mA 10 V
emitter-base breakdown voltage open collector; IE=0.1mA 2.5 V
collector cut-off current VCE=6V; VBE=0 100 A
DC current gain IC=50mA; VCE=5V 25
collector capacitance IE=ie=0; VCB=6V; f=1MHz 3pF
feedback capacitance IC=0; VCE=6V; f=1MHz 2pF
1995 Sep 22 3
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NXP Semiconductors Product specification
Fig.3 Collector capacitance as a function of
collector-base voltage.
handbook, halfpage
MLC819
01048
2.0
0
1.5
6
1.0
0.5
C
c
(pF)
VCB(V)
2
UHF power transistor BFG10W/X
1995 Sep 22 4
Page 5
NXP Semiconductors Product specification
Pulsed, class-AB operat ion.
VCE= 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for PL= 200 mW.
Fig.4 Power gain and efficiency as functions
of load power; typical values.
handbook, halfpage
0 500
10
0
2
MLC820
4
6
8
100
0
20
40
60
80
100 200 300 400
G
p
G
p
(dB)
P (mW)
L
c
(%)
η
c
η
Fig.5 Power gain and efficiency as functions
of load power; typical values.
Pulsed, class-AB operat ion.
VCE= 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for PL= 600 mW.
handbook, halfpage
0.3
16
0
MBG194
4
8
12
80
20
20
40
60
0.5 0.7 0.9 1.1
G
p
G
p
(dB)
P (mW)
L
c
(%)
η
c
η
UHF power transistor BFG10W/X
APPLICATION INFORMATION
RF performance at T
=25C in a common-emitter test circuit.
amb
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 2; t
Pulsed, class-AB, duty cycle: < 1 : 8; t
f
(GHz)
= 10 ms 1.9 3.6 200 5; typ. 7 50; typ. 60
p
=5ms 0.9 6 650 10 50
p
V
(V)
CE
P
L
(mW)
G
p
(dB)
(%)
c
0.9 6 360 12.5 50
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 :1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; t
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; t
= 10 ms; duty cycle of 1 : 2.
p
= 4.6 ms; duty cycle of 1 : 8
p
1995 Sep 22 5
Page 6
NXP Semiconductors Product specification
Fig.6 Class-AB test circuit at f = 900 MHz.
handbook, full pagewidth
MBG428
DUT
+V
bias
+V
CC
R1
R2
R3
TR1
C8
C1
C2 C3 C5C4C6
C7
C9
L2
L3
L4
L1
PCB RT5880, thickness 0.79 mm.
UHF power transistor BFG10W/X
List of components (see Fig.6)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
TR1 bias transistor, BC548 or equivalent note 1
C1, C4, C7 capacitor; notes 2 and 3 120 pF
C2 capacitor; note 2 6.8 pF
C3 capacitor; note 2 0.5 pF
C5 capacitor; note 2 1.2 pF
C6 capacitor; note 2 1.9 pF
C8 Philips multilayer capacitor 1 nF, 10 V
C9 Philips capacitor 1500 F, 10 V 2222 032 14152
L1 6 turns enam elled 0.7 mm copper wire length 3.5 mm
L4 2 turns enam elled 0.7 mm copper wire length 3 mm
L2, L3 RF choke, Philips 4312 020 36690
R1 metal film resistor 275
R2 metal film resistor 100
R3 metal film resistor 10
Notes
1. V
at 1 mA must be 0.65 V.
BE
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
1995 Sep 22 6
Page 7
NXP Semiconductors Product specification
Fig.7 Class-AB test circuit at f = 1.9 GHz.
handbook, full pagewidth
MBG429
DUT
+V
bias
R1 R2
L1
C7
C1
C2 C3 C4 C5
C6
C8
C9
L2
C10
TR1
+V
CC
PCB RT5880, thickness 0.79mm.
UHF power transistor BFG10W/X
List of components (see Fig.6)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
TR1 bias transistor, BC548 or equivalent note 1
C1, C6, C7, C8 capacitor; notes 2 and 3 24 pF
C2 capacitor; note 2 0.4 pF
C3 capacitor; note 2 2.4 pF
C4 capacitor; note 2 0.5 pF
C5 capacitor; note 2 1.2 pF
C9, C10 Philips capacitor 1500 F, 10 V 2222 032 14152
L1, L2 RF choke, Philips 4330 030 36301
R1, R2 metal film resistor 75
R3, R4 metal film resistor 10
Notes
1. V
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
at 1 mA must be 0.65 V.
BE
1995 Sep 22 7
Page 8
NXP Semiconductors Product specification
UNIT
A
1
max
b
p
cD
E
b
1
HEL
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
0.7
0.5
2.2
1.8
1.35
1.15
e
2.2
2.0
1.3
e
1
0.2y0.10.21.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
SOT343N
D
e
1
A
A
1
L
p
Q
detail X
c
H
E
E
v M
A
AB
0 1 2 mm
scale
A
X
12
34
Plastic surface-mounted package; 4 leads SOT343N
e
w M
B
97-05-21
06-03-16
b
p
y
b
1
UHF power transistor BFG10W/X
PACKAGE OUTLINE
1995 Sep 22 8
Page 9
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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In no event shall NXP Semiconductors be liable for any
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aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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Applications Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
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party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.
1995 Sep 22 9
Page 10
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
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products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
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Semiconductors products are sold subject to the general
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Quick reference data The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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1995 Sep 22 10
Page 11
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drawings which were updated to the latest version.
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under patent- or other industrial or intellectual property right s.
Printed in The Netherlands R77/01/pp11 Date of release: 1995 Sep 22
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