Philips BFG10W, BFG10X Technical data
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DISCRETE SEMICONDUCTORS
DATA SH EET
BFG10W/X
UHF power transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 22
Philips Semiconductors Product specification
UHF power transistor BFG10W/X
FEATURES
• High efficiency
• Small size discrete power amplifier
• 900 MHz and 1.9 GHz operating
areas
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common-emitter test circuit.
amb
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 2; t
Pulsed, class-AB, duty cycle: < 1 : 8; t
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
page
34
dual-emitter SOT343 package.
PINNING
PIN DESCRIPTION
1 collector
Top view
21
MBK523
2 emitter
3 base
4 emitter
Marking code: T5.
Fig.1 SOT343.
f
(GHz)
= 10 ms 1.9 3.6 200 ≥5 ≥50
p
= 4.6 ms 0.9 6 650 ≥10 ≥50
p
V
(V)
CE
P
L
(mW)
G
(dB)
p
0.9 6 360 ≥12.5 ≥50
η
(%)
c
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 250 mA
average collector current − 250 mA
total power dissipation up to Ts= 102 °C; note 1 − 400 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to
soldering point
up to Ts= 102 °C; note 1;
P
= 400 mW
tot
180 K/W
Note to the Limiting values and Thermal characteristics
is the temperature at the soldering point of the collector pin.
1. T
s
1995 Sep 22 2
Philips Semiconductors Product specification
UHF power transistor BFG10W/X
CHARACTERISTICS
T
=25°C (unless otherwise specified).
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC= 0.1 mA 20 − V
collector-emitter breakdown voltage open base; IC=5mA 10 − V
emitter-base breakdown voltage open collector; IE= 0.1 mA 2.5 − V
collector cut-off current VCE=6V; VBE=0 − 100 µA
DC current gain IC= 50 mA; VCE=5V 25 −
collector capacitance IE=ie= 0; VCB=6V; f=1MHz − 3pF
feedback capacitance IC= 0; VCE= 6 V; f = 1 MHz − 2pF
3
10
handbook, full pagewidth
Z
th j-a
(K/W)
δ = 1
2
10
10
1
−6
10
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
t
P
t
p
T
−5
10
−4
10
−3
10
−2
10
−1
10
p
=
δ
T
t
tp (s)
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
MBG431
1
1995 Sep 22 3
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