Philips BFE505 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
BFE505
NPN wideband differential transistor
Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14
1996 Oct 08
Philips Semiconductors Product specification
NPN wideband differential transistor BFE505
FEATURES
Small size
High power gain at low bias current and voltage
Temperature matched
Balanced configuration
hFE matched
Continues to operate at VCE<1V.
APPLICATIONS
Single balanced mixers
Balanced amplifiers
Balanced oscillators.
DESCRIPTION
Emitter coupled dual NPN silicon RF transistor in a surface mount, 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners.
PINNING - SOT353B
SYMBOL PIN DESCRIPTION
b
1
1 base 1
e 2 emitter
b
2
c
2
c
1
handbook, halfpage
4
Top view
3 base 2 4 collector 2 5 collector 1
13
2
b
5
c
c
1
2
1
e
Fig.1 Simplified outline and symbol.
MAM211
b
2
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Any single transistor
C
re
MSG/G
F noise figure I
h
FE
R
th j-s
feedback capacitance C maximum power gain IC= 5 mA; VCE= 3 V; f = 900 MHz 17 dB
max
BCIe
= 0; VCB= 3 V; f = 1 MHz 0.25 0.3 pF
= 5 mA; VCE= 3 V; f = 2 GHz 10 dB
I
C
= 2 mA; VCE= 3 V; f = 900 MHz;
C
ΓS= Γ
opt
= 3 mA; VCE= 3 V; f = 2 GHz;
I
C
ΓS= Γ
opt
1.2 1.7 dB
1.9 2.1 dB
DC current gain IC= 5 mA; VCE= 3 V 60 120 250 thermal resistance from
junction to soldering point
single loaded −−230 K/W double loaded −−115 K/W
1996 Oct 08 2
Philips Semiconductors Product specification
NPN wideband differential transistor BFE505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Any single transistor
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter 20 V collector-emitter voltage open base 8V emitter-base voltage open collector 2.5 V DC collector current 18 mA total power dissipation up to Ts=118°C; note 1 500 mW storage temperature 65 +175 °C operating junction temperature 175 °C
thermal resistance from junction to soldering point; note 1
single loaded 230 K/W double loaded 115 K/W
Note to the Limiting values and Thermal characteristics
1. T
is the temperature at the soldering point of the collector pin.
s
1996 Oct 08 3
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