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DISCRETE SEMICONDUCTORS
DATA SH EET
BFE505
NPN wideband differential
transistor
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
1996 Oct 08
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Philips Semiconductors Product specification
NPN wideband differential transistor BFE505
FEATURES
• Small size
• High power gain at low bias current and voltage
• Temperature matched
• Balanced configuration
• hFE matched
• Continues to operate at VCE<1V.
APPLICATIONS
• Single balanced mixers
• Balanced amplifiers
• Balanced oscillators.
DESCRIPTION
Emitter coupled dual NPN silicon RF transistor in a surface
mount, 5-pin SOT353 (S-mini) package. The transistor is
primarily intended for applications in the RF front end as a
balanced mixer, a differential amplifier in analog and digital
cellular phones, and in cordless phones, pagers and
satellite TV-tuners.
PINNING - SOT353B
SYMBOL PIN DESCRIPTION
b
1
1 base 1
e 2 emitter
b
2
c
2
c
1
handbook, halfpage
4
Top view
3 base 2
4 collector 2
5 collector 1
13
2
b
5
c
c
1
2
1
e
Fig.1 Simplified outline and symbol.
MAM211
b
2
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Any single transistor
C
re
MSG/G
F noise figure I
h
FE
R
th j-s
feedback capacitance C
maximum power gain IC= 5 mA; VCE= 3 V; f = 900 MHz − 17 − dB
max
BCIe
= 0; VCB= 3 V; f = 1 MHz − 0.25 0.3 pF
= 5 mA; VCE= 3 V; f = 2 GHz − 10 − dB
I
C
= 2 mA; VCE= 3 V; f = 900 MHz;
C
ΓS= Γ
opt
= 3 mA; VCE= 3 V; f = 2 GHz;
I
C
ΓS= Γ
opt
− 1.2 1.7 dB
− 1.9 2.1 dB
DC current gain IC= 5 mA; VCE= 3 V 60 120 250
thermal resistance from
junction to soldering point
single loaded −−230 K/W
double loaded −−115 K/W
1996 Oct 08 2
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Philips Semiconductors Product specification
NPN wideband differential transistor BFE505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Any single transistor
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
DC collector current − 18 mA
total power dissipation up to Ts=118°C; note 1 − 500 mW
storage temperature −65 +175 °C
operating junction temperature − 175 °C
thermal resistance from junction
to soldering point; note 1
single loaded 230 K/W
double loaded 115 K/W
Note to the Limiting values and Thermal characteristics
1. T
is the temperature at the soldering point of the collector pin.
s
1996 Oct 08 3