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DISCRETE SEMICONDUCTORS
DATA SH EET
BFC505
NPN wideband cascode transistor
Product specification
Supersedes data of 1995 Sep 01
File under Discrete Semiconductors, SC14
1996 Oct 08
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Philips Semiconductors Product specification
NPN wideband cascode transistor BFC505
FEATURES
• Small size
• High power gain at low bias current and high
frequencies
• High reverse isolation
• Low noise figure
• Gold metallization ensures excellent reliability
• Minimum operating voltage V
C2−E1
=1V.
APPLICATIONS
• Low voltage, low current, low noise and high gain
amplifiers
• Oscillator buffer amplifiers
• Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.
PINNING - SOT353
PIN SYMBOL DESCRIPTION
1b
2e
3b
4c
1
5c
handbook, halfpage
5
2
Top view
/e
base 2
2
emitter 1
1
base 1
1
collector 1/emitter 2
2
collector 2
2
4
31
b
2
b
1
Fig.1 Simplified outline and symbol.
c
e
2
1
c1/e
MAM212
2
QUICK REFERENCE DATA
b
connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground.
2
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
re
s21s12⁄
feedback capacitance C
maximum isolation I
2
B1−C2Ie
MSG maximum stable power gain I
F noise figure I
R
th j-s
thermal resistance from
junction to soldering point
= 0; V
= 5 mA; VC2=VB2=3V;
C
= 0; f = 1 MHz −−10 fF
C2-E1
60 −−dB
f = 900 MHz
= 0.5 mA; VC2=VB2=1V;
C
f = 900 MHz; T
= 0.5 mA; V
C
f = 500 MHz; ΓS= Γ
= 1 mA; V
I
C
f = 900 MHz; ΓS= Γ
amb
C2-E1
C2-E1
=25°C
=1V;
opt
=3V;
opt
− 22 − dB
− 1.1 1.4 dB
− 1.8 2.1 dB
single loaded −−230 K/W
double loaded −−115 K/W
1996 Oct 08 2
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Philips Semiconductors Product specification
NPN wideband cascode transistor BFC505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Any single transistor
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
DC collector current − 18 mA
total power dissipation up to Ts=118°C; note 1 − 500 mW
storage temperature −65 +175 °C
junction temperature − 175 °C
thermal resistance from junction
to soldering point; note 1
single loaded 230 K/W
double loaded 115 K/W
Note to the Limiting values and Thermal characteristics
1. T
is the temperature at the soldering point of the collector pin.
s
1996 Oct 08 3
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Philips Semiconductors Product specification
NPN wideband cascode transistor BFC505
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC characteristics of any single transistor
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
AC characteristics of the cascode configuration measured in test circuit (note 1)
f
T
C
c
C
re2
C
re
MSG maximum stable power gain;
2
s
21
s21s12⁄
F noise figure I
IP
3
collector-base breakdown voltage IC= 2.5 µA; IE=0 20 −−V
collector-emitter breakdown
IC=10µA; IB=0 8 −−V
voltage
emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V
collector-base leakage current IE= 0; VCB=6V −−50 nA
DC current gain IC= 5 mA; VCE= 6 V 60 120 250
transition frequency IC= 5 mA; V
collector capacitance T2 IE=ie= 0; V
feedback capacitance T2 IC= 0; V
feedback capacitance IC= 0; V
I
= 0.25 mA; V
C
note 2
f = 300 MHz; T
I
= 0.5 mA; V
C
f = 900 MHz; T
I
= 5 mA; V
C
T
amb
insertion power gain I
= 0.5 mA; V
C
f = 300 MHz; T
I
= 5 mA; V
C
f = 900 MHz; T
I
= 5 mA; V
C
T
amb
maximum isolation; note 3 I
2
= 0.5 mA; V
C
C2-E1
C2-E1
=25°C
=25°C
= 3 V; f = 1 GHz − 7.3 − GHz
C2-E1
= 0; f = 1 MHz − 0.4 − pF
C2-B2
=3V;f=1MHz − 250 fF
=3V;f=1MHz −−10 fF
=1V;
C2-E1
=25°C
amb
=1V;
C2-E1
=25°C
amb
= 3 V; f = 2 GHz;
C2-E1
=3V;
C2-E1
=25°C
amb
=3V;
C2-E1
=25°C
amb
= 3 V; f = 2 GHz;
C2-E1
=1V;
C2-E1
− 25 − dB
− 22 − dB
− 23 − dB
− 21 − dB
− 16 − dB
− 11 − dB
40 45 − dB
f = 900 MHz
I
= 5 mA; V
C
C2-E1
=3V;
60 68 − dB
f = 900 MHz
= 5 mA; V
I
C
= 0.5 mA; V
C
f = 500 MHz; ΓS= Γ
I
= 1 mA; V
C
f = 900 MHz; ΓS= Γ
= 1 mA; V
I
C
f = 2 GHz; ΓS= Γ
= 3 V; f = 2 GHz 40 48 − dB
C2-E1
C2-E1
C2-E1
C2-E1
=1V;
opt
=3V;
opt
=1V;
opt
− 1.1 1.4 dB
− 1.8 2.1 dB
− 3.5 − dB
third order intercept point (input) note 4 −−20 − dBm
1996 Oct 08 4