Philips BFC505 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFC505

NPN wideband cascode transistor

Product specification
Supersedes data of 1995 Sep 01
File under Discrete Semiconductors, SC14

1996 Oct 08

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

FEATURES

• Small size

• High power gain at low bias current and high

frequencies

• High reverse isolation

• Low noise figure

• Gold metallization ensures excellent reliability

• Minimum operating voltage V

C2−E1

=1V.

APPLICATIONS

• Low voltage, low current, low noise and high gain
amplifiers

• Oscillator buffer amplifiers

• Wideband voltage-to-current converters.

DESCRIPTION

Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.

PINNING - SOT353

PIN SYMBOL DESCRIPTION

1b
2e
3b
4c

1

5c

handbook, halfpage

5

2

Top view

/e

base 2

2

emitter 1

1

base 1

1

collector 1/emitter 2

2

collector 2

2

4

31

b

2

b

1

Fig.1 Simplified outline and symbol.

c

e

2

1

c1/e

MAM212

2

QUICK REFERENCE DATA

b

connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground.

2

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

re

s21s12⁄

feedback capacitance C
maximum isolation I

2

B1−C2Ie

MSG maximum stable power gain I

F noise figure I

R

th j-s

thermal resistance from
junction to soldering point

= 0; V

= 5 mA; VC2=VB2=3V;

C

= 0; f = 1 MHz −−10 fF

C2-E1

60 −−dB

f = 900 MHz

= 0.5 mA; VC2=VB2=1V;

C

f = 900 MHz; T

= 0.5 mA; V

C

f = 500 MHz; ΓS= Γ

= 1 mA; V

I

C

f = 900 MHz; ΓS= Γ

amb

C2-E1

C2-E1

=25°C

=1V;

opt

=3V;

opt

− 22 − dB

− 1.1 1.4 dB

− 1.8 2.1 dB

single loaded −−230 K/W
double loaded −−115 K/W

1996 Oct 08 2

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Any single transistor

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
DC collector current − 18 mA
total power dissipation up to Ts=118°C; note 1 − 500 mW
storage temperature −65 +175 °C
junction temperature − 175 °C

thermal resistance from junction
to soldering point; note 1

single loaded 230 K/W
double loaded 115 K/W

Note to the Limiting values and Thermal characteristics

1. T

is the temperature at the soldering point of the collector pin.

s

1996 Oct 08 3

Philips Semiconductors Product specification

NPN wideband cascode transistor BFC505

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC characteristics of any single transistor

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

AC characteristics of the cascode configuration measured in test circuit (note 1)
f

T

C

c

C

re2

C

re

MSG maximum stable power gain;

2

s

21

s21s12⁄

F noise figure I

IP

3

collector-base breakdown voltage IC= 2.5 µA; IE=0 20 −−V
collector-emitter breakdown

IC=10µA; IB=0 8 −−V

voltage
emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V
collector-base leakage current IE= 0; VCB=6V −−50 nA
DC current gain IC= 5 mA; VCE= 6 V 60 120 250

transition frequency IC= 5 mA; V
collector capacitance T2 IE=ie= 0; V
feedback capacitance T2 IC= 0; V
feedback capacitance IC= 0; V

I

= 0.25 mA; V

C

note 2

f = 300 MHz; T
I

= 0.5 mA; V

C

f = 900 MHz; T
I

= 5 mA; V

C

T

amb

insertion power gain I

= 0.5 mA; V

C

f = 300 MHz; T
I

= 5 mA; V

C

f = 900 MHz; T
I

= 5 mA; V

C

T

amb

maximum isolation; note 3 I

2

= 0.5 mA; V

C

C2-E1
C2-E1

=25°C

=25°C

= 3 V; f = 1 GHz − 7.3 − GHz

C2-E1

= 0; f = 1 MHz − 0.4 − pF

C2-B2

=3V;f=1MHz − 250 fF
=3V;f=1MHz −−10 fF

=1V;

C2-E1

=25°C

amb

=1V;

C2-E1

=25°C

amb

= 3 V; f = 2 GHz;

C2-E1

=3V;

C2-E1

=25°C

amb

=3V;

C2-E1

=25°C

amb

= 3 V; f = 2 GHz;

C2-E1

=1V;

C2-E1

− 25 − dB

− 22 − dB

− 23 − dB

− 21 − dB

− 16 − dB

− 11 − dB

40 45 − dB

f = 900 MHz
I

= 5 mA; V

C

C2-E1

=3V;

60 68 − dB

f = 900 MHz

= 5 mA; V

I

C

= 0.5 mA; V

C

f = 500 MHz; ΓS= Γ
I

= 1 mA; V

C

f = 900 MHz; ΓS= Γ

= 1 mA; V

I

C

f = 2 GHz; ΓS= Γ

= 3 V; f = 2 GHz 40 48 − dB

C2-E1

C2-E1

C2-E1

C2-E1

=1V;

opt

=3V;

opt

=1V;

opt

− 1.1 1.4 dB

− 1.8 2.1 dB

− 3.5 − dB

third order intercept point (input) note 4 −−20 − dBm

1996 Oct 08 4