Philips BFC505 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFC505
NPN wideband cascode transistor
Product specification
Supersedes data of 1995 Sep 01
File under Discrete Semiconductors, SC14
1996 Oct 08
Philips Semiconductors Product specification
NPN wideband cascode transistor BFC505
FEATURES
• Small size
• High power gain at low bias current and high
frequencies
• High reverse isolation
• Low noise figure
• Gold metallization ensures excellent reliability
• Minimum operating voltage V
C2−E1
=1V.
APPLICATIONS
• Low voltage, low current, low noise and high gain
amplifiers
• Oscillator buffer amplifiers
• Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.
PINNING - SOT353
PIN SYMBOL DESCRIPTION
1b
2e
3b
4c
1
5c
handbook, halfpage
5
2
Top view
/e
base 2
2
emitter 1
1
base 1
1
collector 1/emitter 2
2
collector 2
2
4
31
b
2
b
1
Fig.1 Simplified outline and symbol.
c
e
2
1
c1/e
MAM212
2
QUICK REFERENCE DATA
b
connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground.
2
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
re
s21s12⁄
feedback capacitance C
maximum isolation I
2
B1−C2Ie
MSG maximum stable power gain I
F noise figure I
R
th j-s
thermal resistance from
junction to soldering point
= 0; V
= 5 mA; VC2=VB2=3V;
C
= 0; f = 1 MHz −−10 fF
C2-E1
60 −−dB
f = 900 MHz
= 0.5 mA; VC2=VB2=1V;
C
f = 900 MHz; T
= 0.5 mA; V
C
f = 500 MHz; ΓS= Γ
= 1 mA; V
I
C
f = 900 MHz; ΓS= Γ
amb
C2-E1
C2-E1
=25°C
=1V;
opt
=3V;
opt
− 22 − dB
− 1.1 1.4 dB
− 1.8 2.1 dB
single loaded −−230 K/W
double loaded −−115 K/W
1996 Oct 08 2
Philips Semiconductors Product specification
NPN wideband cascode transistor BFC505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Any single transistor
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
DC collector current − 18 mA
total power dissipation up to Ts=118°C; note 1 − 500 mW
storage temperature −65 +175 °C
junction temperature − 175 °C
thermal resistance from junction
to soldering point; note 1
single loaded 230 K/W
double loaded 115 K/W
Note to the Limiting values and Thermal characteristics
1. T
is the temperature at the soldering point of the collector pin.
s
1996 Oct 08 3
Philips Semiconductors Product specification
NPN wideband cascode transistor BFC505
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC characteristics of any single transistor
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
AC characteristics of the cascode configuration measured in test circuit (note 1)
f
T
C
c
C
re2
C
re
MSG maximum stable power gain;
2
s
21
s21s12⁄
F noise figure I
IP
3
collector-base breakdown voltage IC= 2.5 µA; IE=0 20 −−V
collector-emitter breakdown
IC=10µA; IB=0 8 −−V
voltage
emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V
collector-base leakage current IE= 0; VCB=6V −−50 nA
DC current gain IC= 5 mA; VCE= 6 V 60 120 250
transition frequency IC= 5 mA; V
collector capacitance T2 IE=ie= 0; V
feedback capacitance T2 IC= 0; V
feedback capacitance IC= 0; V
I
= 0.25 mA; V
C
note 2
f = 300 MHz; T
I
= 0.5 mA; V
C
f = 900 MHz; T
I
= 5 mA; V
C
T
amb
insertion power gain I
= 0.5 mA; V
C
f = 300 MHz; T
I
= 5 mA; V
C
f = 900 MHz; T
I
= 5 mA; V
C
T
amb
maximum isolation; note 3 I
2
= 0.5 mA; V
C
C2-E1
C2-E1
=25°C
=25°C
= 3 V; f = 1 GHz − 7.3 − GHz
C2-E1
= 0; f = 1 MHz − 0.4 − pF
C2-B2
=3V;f=1MHz − 250 fF
=3V;f=1MHz −−10 fF
=1V;
C2-E1
=25°C
amb
=1V;
C2-E1
=25°C
amb
= 3 V; f = 2 GHz;
C2-E1
=3V;
C2-E1
=25°C
amb
=3V;
C2-E1
=25°C
amb
= 3 V; f = 2 GHz;
C2-E1
=1V;
C2-E1
− 25 − dB
− 22 − dB
− 23 − dB
− 21 − dB
− 16 − dB
− 11 − dB
40 45 − dB
f = 900 MHz
I
= 5 mA; V
C
C2-E1
=3V;
60 68 − dB
f = 900 MHz
= 5 mA; V
I
C
= 0.5 mA; V
C
f = 500 MHz; ΓS= Γ
I
= 1 mA; V
C
f = 900 MHz; ΓS= Γ
= 1 mA; V
I
C
f = 2 GHz; ΓS= Γ
= 3 V; f = 2 GHz 40 48 − dB
C2-E1
C2-E1
C2-E1
C2-E1
=1V;
opt
=3V;
opt
=1V;
opt
− 1.1 1.4 dB
− 1.8 2.1 dB
− 3.5 − dB
third order intercept point (input) note 4 −−20 − dBm
1996 Oct 08 4
Loading...