Philips BF998WR Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BF998WR
N-channel dual-gate MOS-FET
Product specification
Supersedes data of 1995 Apr 25
File under Discrete Semiconductors, SC07
1997 Sep 05
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
FEATURES
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
microminiature SOT343R package with source and
substrate interconnected. The transistor is protected
against excessive input voltage surges by integrated
back-to-back diodes between gates and source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN SYMBOL DESCRIPTION
1 s, b source
2 d drain
3g
4g
34
21
Top view
Marking code: MB.
gate 2
2
gate 1
1
MAM198
g
2
g
1
Fig.1 Simplified outline (SOT343R) and symbol.
d
s,b
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
I
D
P
tot
T
j
y
forward transfer admittance − 24 − mS
fs
C
ig1-s
C
rs
drain-source voltage −−12 V
drain current −−30 mA
total power dissipation −−300 mW
operating junction temperature −−150 °C
input capacitance at gate 1 − 2.1 − pF
reverse transfer capacitance f=1MHz − 25 − fF
F noise figure f = 800 MHz − 1 − dB
1997 Sep 05 2
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board.
drain-source voltage − 12 V
drain current − 30 mA
gate 1 current −±10 mA
gate 2 current −±10 mA
total power dissipation up to T
=45°C; see Fig.2; note 1 − 300 mW
amb
storage temperature −65 +150 °C
operating junction temperature − +150 °C
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
150
Fig.2 Power derating curve.
MLD154
o
T ( C)
amb
1997 Sep 05 3
Philips Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(P)G1-S
V
(P)G2-S
I
DSS
I
G1-SS
I
G2-SS
thermal resistance from junction to ambient note 1 350 K/W
thermal resistance from junction to soldering point note 2; Ts=90°C 200 K/W
gate 1-source breakdown voltage V
gate 2-source breakdown voltage V
gate 1-source cut-off voltage V
gate 2-source cut-off voltage V
drain-source current V
gate 1 cut-off current V
gate 2 cut-off current V
G2-S=VDS
G1-S=VDS
G2-S
G1-S
G2-S
G2-S=VDS
G1-S=VDS
= 0; I
= 0; I
= 10 mA 6 20 V
G1-S
= 10 mA 6 20 V
G2-S
=4V; VDS=8V; ID=20µA −−2.5 V
= 0; VDS=8V; ID=20µA −−2V
=4V; VDS=8V; V
= 0; V
G1-S
= 0; V
G2-S
=0 2 18 mA
G1-S
=5V − 50 nA
=5V − 50 nA
DYNAMIC CHARACTERISTICS
Common source; T
=25°C; V
amb
= 4 V; ID= 10 mA; VDS= 8 V; unless otherwise specified.
G2-S
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
y
forward transfer admittance pulsed; Tj=25°C2225−mS
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F noise figure f = 200 MHz; G
input capacitance at gate 1 f = 1 MHz − 2.1 2.5 pF
input capacitance at gate 2 f = 1 MHz − 1.2 − pF
drain-source capacitance f = 1 MHz − 1.05 − pF
reverse transfer capacitance f = 1 MHz − 25 − fF
f = 800 MHz; G
= 2 mS; BS=B
S
= 3.3 mS; BS=B
S
− 0.6 − dB
Sopt
− 1 − dB
Sopt
1997 Sep 05 4
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