Philips bf996s Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

BF996S

N-channel dual-gate MOS-FET

Product specification April 1991

NXP Semiconductors Product specification

Fig.1 Simplified outline (SOT143) and symbol.

Marking code: MHp.

handbook, halfpage

s,b

d

g

1

g

2

43

21

Top view MAM039

Y

fs

N-channel dual-gate MOS-FET BF996S

FEATURES

 Protected against excessive input voltage surges by

integrated back-to-back diodes between gates
and source.

APPLICATIONS

 RF applications such as:

– UHF television tuners
– Professional communication equipment.

PINNING

PIN SYMBOL DESCRIPTION

1 s, b source
2 d drain
3g
4g

gate 2

2

gate 1

1

QUICK REFERENCE DATA

DESCRIPTION

Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

DS

I

D

P

tot

T

j

C

ig-1s

C

rs

F noise figure f = 200 MHz G

drain-source voltage  20 V
drain current  30 mA
total power dissipation up to T

=60C  200 mW

amb

junction temperature  150 C
transfer admittance f = 1 kHz; I

=10mA; VDS=15V; V

D

input capacitance at gate 1 f = 1 MHz; ID=10mA; VDS=15V; V
feedback capacitance f = 1 MHz; ID=10mA; VDS=15V; V

=2mS; BS=B

S

=10mA; VDS=15V; V

I

D

GS2

Sopt

=4V

=4V 18  mS

G2S

=4V 2.3 2.6 pF

G2S

=4V 25  fF

G2S

;

1  dB

April 1991 2

NXP Semiconductors Product specification

Fig.2 Power derating curve.

handbook, halfpage

0 200

0

100

200

MGE792

100

T

amb

(°C)

P

tot

(mW)

N-channel dual-gate MOS-FET BF996S

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

I

D

I

D(AV)

I

G1-S

I

G1-S

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

drain-source voltage  20 V
drain current (DC)  30 mA
average drain current  30 mA
gate 1 source 10 mA
gate 2 source 10 mA
total power dissipation up to T

=60C; note 1  200 mW

amb

storage temperature range 65 +150 C
junction temperature  150 C

thermal resistance from junction to ambient in free air; note 1 460 K/W

Note to the Limiting values and the Thermal characteristics

1. Device mounted on a ceramic substrate of 8  10  0.7 mm.

April 1991 3

NXP Semiconductors Product specification

Y

fs

N-channel dual-gate MOS-FET BF996S

STATIC CHARACTERISTICS

T

=25C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

G1SS

I

G2SS

V

(BR)G1-SS

V

(BR)G2-SS

I

DSS

V

(P)G1-S

V

(P)G2-S

DYNAMIC CHARACTERISTICS

Measuring conditions (common source): I

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

ig1-s

C

ig2-s

C

rs

C

os

F noise figure f = 200 MHz; G

G

P

gate cut-off current V
gate cut-off current V
gate-source breakdown voltage I
gate-source breakdown voltage I
drain current VDS=15V; V
gate-source cut-off cu rr ent ID=20A; VDS=15V; V
gate-source cut-off cu rr ent ID=20A; VDS=15V; V

=10mA; VDS=15V; V

D

= 5V; V

G1-S

= 5V; V

G2-S

= 10 mA; V

G1-S

= 10 mA; V

G2-S

G2-S=VDS
G1-S=VDS

G2-S=VDS
G1-S=VDS

=0; V

G1-S

G2-S

=0 50 nA
=0 50 nA

=0 6 20 V
=0 6 20 V

=4V 4 20 mA

G2-S

=4V 2.5 V

G2-S

=0 2V

G1-S

=4V; T

amb

=25C.

transfer admittance f = 1 kHz 15 18  mS
input capacitance at gate1 f = 1 MHz  2.3 2.6 pF
input capacitance at gate2 f = 1 MHz  1.2  pF
feedback capacitance f = 1 MHz  25  fF
output capacitance f = 1 MHz  0.8  pF

=2mS; BS=B

S

f=800MHz; G

= 3.3 mS; BS=B

S

power gain f = 200 MHz; GS=2mS; BS=B

= 0.5 mS; BL=B

G

L

f=800MHz; G
B

S=BSopt

; GL=1mS; BL=B

Lopt

= 3.3 mS;

S

Lopt

Sopt

Sopt

 1  dB
 1.8  dB

Sopt

;

 25  dB

 18  dB

April 1991 4

NXP Semiconductors Product specification

UNIT

A

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC JEITA

mm

1.1

0.9

A

1

max

0.1

b

1

0.88

0.78

c

0.15

0.09

D

3.0

2.8

E

1.4

1.2

H

E

ywvQ

2.5

2.1

0.45

0.15

0.55

0.45

e

1.9

e

1

1.7

L

p

0.1 0.10.2

b

p

0.48

0.38

DIMENSIONS (mm are the original dimensions)

SOT143B

04-11-16
06-03-16

0 1 2 mm

scale

Plastic surface-mounted package; 4 leads SOT143B

D

H

E

E

A

B

v M

A

X

A

A

1

L

p

Q

detail X

c

y

w M

e

1

e

B

21

34

b

1

b

p

N-channel dual-gate MOS-FET BF996S

PACKAGE OUTLINE

April 1991 5

NXP Semiconductors Product specification

N-channel dual-gate MOS-FET BF996S

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Dev elopment This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued docu ment before initiating or completing a design.

2. The product status of devi ce(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DEFINITIONS
Product specification  The information and data

provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.

DISCLAIMERS
Limited warranty and liability  Information in this

document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.

In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.

Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication he reof.

Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications wher e failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inc l usion and/or use is at
the customer’s own risk.

Applications  Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.

April 1991 6

NXP Semiconductors Product specification

N-channel dual-gate MOS-FET BF996S

NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.

Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.

Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In cas e an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.

Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data  The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with auto motive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.

In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from cus tom er d esign and use o f
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.

No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights .

April 1991 7

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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The information presented in this document does not form part of any quotation or cont ra ct, is b elieve d t o b e a ccur ate and reliable and may be changed
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Printed in The Netherlands R77/02/pp8 Date of release:April 1991