Philips BF992, BF992R DATA SHEET

DISCRETE SEMICONDUCTORS

BF992; BF992R

Silicon N-channel dual-gate

MOS-FETs

Product specification

1996 Jul 30

Supersedes data of April 1991

File under Discrete Semiconductors, SC07

Philips Semiconductors	Product specification
Silicon N-channel dual-gate MOS-FETs	BF992; BF992R

APPLICATIONS

·VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. The device is also suitable for use in professional communications equipment.

DESCRIPTION

Depletion type field-effect transistor in a plastic micro-miniature SOT143 or SOT143R package with source and substrate interconnected.

The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

CAUTION

The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.

PINNING

PIN	SYMBOL	DESCRIPTION
1	s,b	source
2	d	drain
3	g2	gate 2
4	g1	gate 1

QUICK REFERENCE DATA

handbook,		halfpage	4	3				d

g2 g1

			1	2
									s,b
	Top view
							MAM039
Marking code: M92.
		Fig.1	Simplified outline (SOT143) and
			symbol; BF992.

handbook, halfpage	d
3	4
	g2
	g1
2	1
Top view	s,b
	MAM040

Marking code: M52.

Fig.2 Simplified outline (SOT143R) and symbol; BF992R.

SYMBOL	PARAMETER	CONDITIONS	TYP.	MAX.	UNIT
VDS	drain-source voltage (DC)		-	20	V
ID	drain current (DC)		-	40	mA
Ptot	total power dissipation	Tamb = 60 °C	-	200	mW
ïYfsï	forward transfer admittance	f = 1 kHz; ID = 15 mA; VDS = 10 V;	25	-	mS
		VG2-S = 4 V
Cig1-s	input capacitance at gate 1	f = 1 MHz; ID = 15 mA; VDS = 10 V;	4	-	pF
		VG2-S = 4 V
Crs	reverse transfer capacitance	f = 1 MHz; ID = 15 mA; VDS = 10 V;	30	-	fF
		VG2-S = 4 V
F	noise figure	GS = 2 mS; ID = 15 mA; VDS = 10 V;	1.2	-	dB
		VG2-S = 4 V; f = 200 MHz
Tj	operating junction temperature		-	150	°C

1996 Jul 30

2

Philips Semiconductors				Product specification
Silicon N-channel dual-gate MOS-FETs			BF992; BF992R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage		−	20	V
ID	drain current		−	40	mA
±IG1	gate 1 current		−	10	mA
±IG2	gate 2 current		−	10	mA
Ptot	total power dissipation	up to Tamb = 60 °C; see Fig.3; note 1	−	200	mW
Tstg	storage temperature		−65	+150	°C
Tj	operating junction temperature		−	150	°C

Note

1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.

MLA198

handbook, halfpage
200
(2)		(1)
Ptot max
(mW)
100

0

0	100	200
	T	(o C)
	amb

(1)BF992.

(2)BF992R.

Fig.3 Power derating curves.

1996 Jul 30

3