Philips BF992, BF992R DATA SHEET
DISCRETE SEMICONDUCTORS
DATA SH EET
BF992; BF992R
Silicon N-channel dual-gate
MOS-FETs
Product specification
Supersedes data of April 1991
File under Discrete Semiconductors, SC07
1996 Jul 30
Philips Semiconductors Product specification
Silicon N-channel dual-gate MOS-FETs BF992; BF992R
APPLICATIONS
• VHF applications such as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143 or SOT143R package with
source and substrate interconnected.
handbook, halfpage
Top view
43
21
MAM039
g
2
g
1
d
s,b
The transistors are protected against excessive input
voltage surges by integrated back-to-back diodes between
gates and source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN SYMBOL DESCRIPTION
1 s,b source
2 d drain
3g
4g
gate 2
2
gate 1
1
QUICK REFERENCE DATA
Marking code: M92.
Fig.1 Simplified outline (SOT143) and
symbol; BF992.
handbook, halfpage
Marking code: M52.
34
Top view
g
g
12
MAM040
Fig.2 Simplified outline (SOT143R) and
symbol; BF992R.
d
2
1
s,b
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
DS
I
D
P
tot
forward transfer admittance f = 1 kHz; ID= 15 mA; VDS=10V;
Y
fs
C
ig1-s
C
rs
F noise figure G
T
j
drain-source voltage (DC) − 20 V
drain current (DC) − 40 mA
total power dissipation T
=60°C − 200 mW
amb
25 − mS
V
=4V
G2-S
input capacitance at gate 1 f = 1 MHz; ID= 15 mA; VDS=10V;
V
=4V
G2-S
reverse transfer capacitance f = 1 MHz; ID= 15 mA; VDS=10V;
V
=4V
G2-S
= 2 mS; ID= 15 mA; VDS=10V;
S
V
= 4 V; f = 200 MHz
G2-S
4 − pF
30 − fF
1.2 − dB
operating junction temperature − 150 °C
1996 Jul 30 2
Philips Semiconductors Product specification
Silicon N-channel dual-gate MOS-FETs BF992; BF992R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
±I
G1
±I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
drain-source voltage − 20 V
drain current − 40 mA
gate 1 current − 10 mA
gate 2 current − 10 mA
total power dissipation up to T
=60°C; see Fig.3; note 1 − 200 mW
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
handbook, halfpage
200
P
tot max
(mW)
100
0
0 200100
(1) BF992.
(2) BF992R.
Fig.3 Power derating curves.
(2) (1)
T
amb
o
( C)
MLA198
1996 Jul 30 3
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