Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
BF908WR
N-channel dual-gate MOS-FET
Preliminary specification 1995 Apr 25
Page 2
NXP Semiconductors Preliminary specification
Fig.1 Simplified outline (SOT343R) and symbol.
Marking code: MD.
MAM198
Top view
21
34
s,b
d
g
1
g
2
N-channel dual-gate MOS-FET BF908WR
FEATURES
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT343R package. The transistor is
protected against excessive input voltage surges by
integrated back-to-back diodes between ga tes and
source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handlin g.
PINNING
PIN SYMBOL DESCRIPTION
1s, bsource
2 d drain
3g
4g
gate 2
2
gate 1
1
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
I
D
P
tot
T
j
forward transfer admittance 36 43 50 mS
y
fs
C
ig1-s
C
rs
drain-source voltage 12 V
drain current 40 mA
total power dissipation 300 mW
operating junction temperature 150 C
input capacitance at gate 1 2.4 3.1 4 pF
reverse transfer capacitance f = 1 MHz 20 30 45 fF
F noise figure f = 800 MHz 1.5 2.5 dB
1995 Apr 25 2
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NXP Semiconductors Preliminary specification
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
0
MLD154
150
400
200
300
100
P
tot
(mW)
T ( C)
amb
o
N-channel dual-gate MOS-FET BF908WR
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board.
drain-source voltage 12 V
drain current 40 mA
gate 1 current 10 mA
gate 2 current 10 mA
total power dissipation up to T
=45C; see Fig.2;
amb
300 mW
note 1
storage temperature 65 +150 C
operating junction temperature +150 C
1995 Apr 25 3
Page 4
NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Notes
1. Device mounted on a printed-circuit board.
2. T
is the temperature at the soldering point of the source lead.
s
STATIC CHARACTERISTICS
=25C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(P)G1-S
V
(P)G2-S
I
DSS
I
G1-SS
I
G2-SS
thermal resistance from junction to ambient note 1 350 K/W
thermal resistance from junction to soldering point Ts=87C; note 2 210 K/W
gate 1-source breakdown voltage V
gate 2-source breakdown voltage V
gate 1-source cut-off voltage V
gate 2-source cut-off voltage V
drain-source current V
gate 1 cut-off current V
gate 2 cut-off current V
G2-S=VDS
G1-S=VDS
G2-S
G1-S
G2-S
G2-S=VDS
G1-S=VDS
=0; I
=0; I
=10mA 8 20 V
G1-S
=10mA 8 20 V
G2-S
=4V; VDS=8V; ID=20A 2V
=4V; VDS=8V; ID=20A 1.5 V
=4V; VDS=8V; V
=0; V
G1-S
=0; V
G2-S
=0 3 15 27 mA
G1-S
=5V 50 nA
=5V 50 nA
DYNAMIC CHARACTERISTICS
Common source; T
=25C; VDS=8V; V
amb
=4V; ID= 15 mA; unless otherwise specified.
G2-S
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
forward transfer admittance pulsed; Tj=25C 364350mS
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F noise figure f = 200 MHz; G
input capacitance at gate1 f = 1 MHz 2.4 3.1 4 pF
input capacitance at gate2 f = 1 MHz 1.2 1.8 2.5 pF
drain-source capacitance f = 1 MHz 1.2 1.7 2.2 pF
reverse transfer capacita nce f = 1 MHz 20 30 45 fF
f=800MHz; G
=2mS; BS=B
S
S=GSopt
; BS=B
Sopt
Sopt
0.6 1.2 dB
1.5 2.5 dB
1995 Apr 25 4
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NXP Semiconductors Preliminary specification
Fig.3 Transfer characteristics; typical values.
VDS=8V.
Tj=25C.
handbook, halfpage
−0.6 −0.4 0 0.2−0.2 0.4
V
G1-S
(V)
3 V
2 V
1.5 V
0.5 V
0 V
0.6
40
30
10
0
20
MRC281
V
G2-S
= 4 V
1 V
I
D
(mA)
Fig.4 Output characteristics; typical values.
V
G2-S
=4V.
Tj=25C.
handbook, halfpage
048 16
30
10
0
20
MRC282
12
VDS (V)
I
D
(mA)
0.2 V
0.1 V
0 V
−0.3 V
−0.2 V
−0.1 V
V
G1-S
= 0.3 V
Fig.5 Forward transfer admittance as a function
of drain current; typical values.
VDS=8V.
Tj=25C.
0
10
20
30
40
50
0 5 10 15 20 25
0.5 V
1 V
1.5 V
2 V
3 V
4 V
V
G2-S
= 0 V
Y
fs
(mS)
ID(mA)
MRC280
Fig.6 Forward transfer admittance as a function
of junction temperature; typical values.
0
20
40
60
0 40 80 120 16040
Y
fs
(mS)
Tj( C)
o
MRC276
N-channel dual-gate MOS-FET BF908WR
1995 Apr 25 5
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NXP Semiconductors Preliminary specification
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT343R
D
A
A
1
L
p
Q
detail X
c
H
E
E
v M
A
AB
0 1 2 mm
scale
X
21
43
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
w M
B
97-05-21
06-03-16
b
p
UNIT
A
1
max
b
p
cD
E
b
1
H
E
L
p
Qwv
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
0.7
0.5
2.2
1.8
1.35
1.15
e
2.2
2.0
1.3
e
1
0.2y0.10.21.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
e
1
A
e
y
b
1
N-channel dual-gate MOS-FET BF908WR
PACKAGE OUTLINE
1995 Apr 25 6
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NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or co mpleting a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
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Notwithstanding any damages that customer might incur
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aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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information supplied prior to the publication he reof.
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not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications wher e failure or malfunction
of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inc l usion and/or use is at
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Applications Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.
1995 Apr 25 7
Page 8
NXP Semiconductors Preliminary specification
N-channel dual-gate MOS-FET BF908WR
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
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Semiconductors products are sold subject to the general
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http://www.nxp.com/profile/terms, unless otherwise
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Quick reference data The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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In the event that customer uses the product for design-in
and use in automotive applications to automotive
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Semiconductors’ product specifications.
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may be interpreted or construed as an offer to sell products
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1995 Apr 25 8
Page 9
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and relia ble and may be change d
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R77/01/pp9 Date of release: 1995 Apr 25
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