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BF904
DATA SHEET
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Philips BF904, BF904R DATA SHEET

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DISCRETE SEMICONDUCTORS
DATA SH EET
BF904; BF904R
N-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
FEATURES
• Specially designed for use at 5 V supply voltage
• Short channel transistor with high transfer admittance to
input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 and SOT143R package. The
handbook, halfpage
43
d
transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
PINNING
PIN SYMBOL DESCRIPTION
1 s, b source 2 d drain 3g 4g
handbook, halfpage
34
gate 2
2
gate 1
1
d
g
2
g
1
21
Top view
BF904 marking code: M04.
MAM124
Fig.1 Simplified outline (SOT143) and symbol.
s,b
12
Top view
BF904R marking code: M06.
MAM125 - 1
Fig.2 Simplified outline (SOT143R) and symbol.
g
2
g
1
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
I
D
P
tot
T
j
y
forward transfer admittance 22 25 30 mS
fs
C
ig1-s
C
rs
drain-source voltage −−7V drain current −−30 mA total power dissipation −−200 mW operating junction temperature −−150 °C
input capacitance at gate 1 − 2.2 2.6 pF reverse transfer capacitance f = 1 MHz − 25 35 fF
F noise figure f = 800 MHz − 2 − dB
s,b
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board.
drain-source voltage − 7V drain current − 30 mA gate 1 current −±10 mA gate 2 current −±10 mA total power dissipation see Fig.3
BF904 up to T BF904R up to T
=50°C; note 1 − 200 mW
amb
=40°C; note 1 − 200 mW
amb
storage temperature −65 +150 °C operating junction temperature − 150 °C
250
handbook, halfpage
P
tot
(mW)
200
150
100
50
0
0 50 100 150 200
BF904
BF904R
T
Fig.3 Power derating curves.
amb
MRA770
o
( C)
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Notes
1. Device mounted on a printed-circuit board.
is the temperature at the soldering point of the source lead.
2. T
s
STATIC CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
thermal resistance from junction to ambient note 1
BF904 500 K/W BF904R 550 K/W
thermal resistance from junction to soldering point note 2
BF904 T BF904R T
=92°C 290 K/W
s
=78°C 360 K/W
s
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
gate 1-source breakdown voltage V gate 2-source breakdown voltage V forward source-gate 1 voltage V forward source-gate 2 voltage V gate 1-source threshold voltage V gate 2-source threshold voltage V drain-source current V
G2-S=VDS G1-S=VDS G2-S=VDS G1-S=VDS G2-S G1-S=VDS G2-S
= 0; I = 0; I = 0; I = 0; I
=4V; VDS=5V; ID=20µA 0.3 1 V
=5V; ID=20µA 0.3 1.2 V
=4V; VDS=5V;
= 10 mA 6 15 V
G1-S
= 10 mA 6 15 V
G2-S
= 10 mA 0.5 1.5 V
S-G1
= 10 mA 0.5 1.5 V
S-G2
813mA
RG1= 120 kΩ; note 1
I
G1-SS
I
G2-SS
gate 1 cut-off current V gate 2 cut-off current V
G2-S=VDS G1-S=VDS
= 0; V = 0; V
=5V − 50 nA
G1-S
=5V − 50 nA
G2-S
Note
1. R
connects gate 1 to VGG= 5 V; see Fig.20.
G
DYNAMIC CHARACTERISTICS
Common source; T
=25°C; VDS= 5 V; V
amb
= 4 V; ID= 10 mA; unless otherwise specified.
G2-S
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
y
forward transfer admittance pulsed; Tj=25°C 222530mS
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F noise figure f = 200 MHz; G
input capacitance at gate 1 f = 1 MHz − 2.2 2.6 pF input capacitance at gate 2 f = 1 MHz 1 1.5 2 pF drain-source capacitance f = 1 MHz 1 1.3 1.6 pF reverse transfer capacitance f = 1 MHz − 25 35 fF
f = 800 MHz; G
= 2 mS; BS=B
S S=GSopt
; BS=B
− 1 1.5 dB
Sopt
− 2 2.8 dB
Sopt
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
100
MLD268
o
T ( C)
j
40
Y
fs
(mS)
30
20
10
0
50 0 50 150
Fig.4 Transfer admittance as a function of the
junction temperature; typical values.
gain
(dB)
10
20
30
40
50
f =50 MHz.
0
01234
handbook, halfpage
reduction
Fig.5 Typical gain reduction as a function of
the AGC voltage.
MRA769
V (V)
AGC
120
handbook, halfpage
V
unw
(dB V)
µ
110
100
90
80
0 1020304050
VDS= 5 V; VGG= 5 V; fw= 50 MHz. f
= 60 MHz; T
unw
=25°C; RG1= 120 kΩ.
amb
gain reduction (dB)
MRA771
Fig.6 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical values; see Fig.20.
20
I
D
(mA)
15
10
VDS=5V. Tj=25°C.
5
0
0
0.4 2.0
V = 4 V
G2 S
0.8 1.2 1.6
3 V 2.5 V
V (V)
Fig.7 Transfer characteristics; typical values.
MLD270
2 V
1.5 V
1 V
G1 S
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
20
handbook, halfpage
I
D
(mA)
16
12
8
4
0
0
VDS=5V. V
=4V.
G2-S
Tj=25°C.
210
V = 1.4 V
G1 S
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
468
Fig.8 Output characteristics; typical values.
MLD269
V (V)
DS
150
handbook, halfpage
I
G1
(µA)
100
50
0
0
VDS=5V. Tj=25°C.
0.5 2.5
1.0 1.5 2.0
V = 4 V
G2 S
Fig.9 Gate 1 current as a function of gate 1
voltage; typical values.
MLD271
3.5 V
3 V
2.5 V
2 V
V (V)
G1 S
40
handbook, halfpage
y
fs
(mS)
30
20
10
0
0
VDS=5V. Tj=25°C.
4 8 12 16 20
Fig.10 Forward transfer admittance as a
function of drain current; typical values.
MLD272
V = 4 V
G2 S
3.5 V 3 V
2.5 V
2 V
I (mA)
D
16
handbook, halfpage
I
D
(mA)
12
8
4
0
0
VDS=5V. V
=4V.
G2-S
Tj=25°C.
10 50
20 30 40
MLD273
I (µA)
G1
Fig.11 Drain current as a function of gate 1 current;
typical values.
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
12
handbook, halfpage
I
D
(mA)
8
4
0
0
VDS= 5 V; V RG1= 120 kΩ (connected to VGG); Tj=25°C.
15
=4V.
G2-S
234
Fig.12 Drain current as a function of gate 1
supply voltage (= VGG); typical values; see Fig.20.
MLD275
V (V)
GG
20
handbook, halfpage
I
D
(mA)
15
10
5
0
0
VDS= 5 V; V RG1 connected to VGG; Tj=25°C.
G2-S
R = 47 kΩ
24 8
=4V.
G1
68 kΩ
V = V (V)
GG DS
Fig.13 Drain current as a function of gate 1
(= VGG) and drain supply voltage; typical values; see Fig.20.
MLD274
82 kΩ
100 kΩ 120 kΩ 150 kΩ
180 kΩ 220 kΩ
6
12
handbook, halfpage
I
D
(mA)
8
4
0
0246
VDS= 5 V; Tj=25°C. RG1= 120 kΩ (connected to VGG).
V = 5 V
GG
4.5 V 4 V
3.5 V 3 V
V (V)
G2 S
MLD276
Fig.14 Drain current as a function of gate 2 voltage;
typical values; see Fig.20.
40
handbook, halfpage
I
G1
(µA)
30
20
10
0
0246
VDS= 5 V; Tj=25°C. RG1= 120 kΩ (connected to VGG).
V = 5 V
GG
V (V)
Fig.15 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.20.
MLB945
4.5 V 4 V
3.5 V 3 V
G2 S
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
2
10
handbook, halfpage
y
is
MLD277
(mS)
10
b
is
1
g
is
1
10
10
2
10
f (MHz)
VDS= 5 V; VG2=4V. ID= 15 mA; T
amb
=25°C.
Fig.16 Input admittance as a function of frequency;
typical values.
f (MHz)
MLD278
3
10
ϕ
rs
(deg)
2
10
10
1
3
10
3
10
y
rs
(µS)
ϕ
2
10
rs
y
rs
10
3
10
1
10
2
10
VDS= 5 V; VG2=4V. ID= 15 mA; T
amb
=25°C.
Fig.17 Reverse transfer admittance and phase as
a function of frequency; typical values.
MLD279
3
10
y
(mS)
2
10
fs
10
1
10
y
fs
ϕ
fs
2
10
f (MHz)
VDS= 5 V; VG2=4V. ID= 15 mA; T
amb
=25°C.
Fig.18 Forward transfer admittance and phase as
a function of frequency; typical values.
10
ϕ
(deg)
10
1
2
fs
10
handbook, halfpage
y
os
(mS)
b
os
MLD280
1
g
1
10
2
10
10
os
2
10
f (MHz)
3
10
VDS= 5 V; VG2=4V. ID= 15 mA; T
amb
=25°C.
Fig.19 Output admittance as a function of
frequency; typical values.
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
V
AGC
R1
10 kΩ
C1
R
GEN
50
V
4.7 nF
C2
4.7 nF
R2
50
Ω
I
Ω
R
G1
V
GG
DUT
V
DS
C3 12 pF
L1
450 nH
≈
C4
4.7 nF
R
50 Ω
MLD171
L
Fig.20 Cross-modulation test set-up.
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
Table 1 Scattering parameters: VDS=5 V; V
s
f
(MHz)
MAGNITUDE
(ratio)
11
ANGLE
(deg)
MAGNITUDE
(ratio)
= 4 V; ID=10mA
G2-S
s
21
ANGLE
(deg)
s
MAGNITUDE
(ratio)
12
ANGLE
(deg)
s
22
MAGNITUDE
(ratio)
ANGLE
(deg)
40 0.989 −3.4 2.420 175.7 0.000 79.9 0.993 −1.6 100 0.985 −8.3 2.414 169.1 0.001 78.3 0.992 −3.9 200 0.976 −16.4 2.368 158.8 0.003 80.3 0.987 −7.8 300 0.958 −24.1 2.301 148.5 0.004 73.7 0.980 −11.4 400 0.942 −32.0 2.251 138.8 0.005 70.7 0.974 −15.2 500 0.918 −39.3 2.170 129.5 0.005 67.2 0.966 −18.7 600 0.899 −46.0 2.080 120.7 0.005 67.8 0.958 −22.2 700 0.876 −52.6 2.001 112.1 0.005 68.6 0.951 −25.5 800 0.852 −58.8 1.924 103.2 0.005 72.9 0.944 −28.9 900 0.823 −64.9 1.829 94.7 0.005 78.7 0.937 −32.1
1000 0.800 −70.9 1.747 86.5 0.005 88.3 0.933 −35.2 1200 0.750 −82.4 1.621 70.7 0.005 120.5 0.928 −41.7 1400 0.719 −92.7 1.535 54.6 0.008 139.8 0.930 −48.4 1600 0.682 −102.5 1.424 39.4 0.010 137.8 0.924 −54.9 1800 0.642 −109.8 1.349 22.5 0.013 156.8 0.928 −62.9 2000 0.602 −116.5 1.283 1.1 0.018 175.1 0.928 −73.1 2200 0.547 −124.9 1.130 −15.1 0.014 172.6 0.887 −81.0 2400 0.596 −128.7 1.018 −49.1 0.040 −163.9 0.837 −95.8 2600 0.682 −132.6 0.979 −79.4 0.077 −164.0 0.778 −109.6 2800 0.771 −142.5 0.804 −116.2 0.120 178.8 0.629 −119.5 3000 0.793 −157.5 0.541 −153.5 0.149 158.3 0.479 −119.9
Table 2 Noise data: V
f
(MHz)
DS
= 5 V; V
= 4 V; ID=10mA
G2-S
F
min
(dB)
800 2.00 o.686 49.6 50.40
1995 Apr 25 10
Γ
opt
(ratio) (deg)
r
n
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
PACKAGE OUTLINES
handbook, full pagewidth
Dimensions in mm.
10
max
3.0
0.150
30
max
0.090
0.1
max
10
max
o
o
0.88
0.75
0.60
o
1.1
max
2.8
1.9
43
2
1
0
0.1
TOP VIEW
0.48
1.7
0
0.1
B
A
1.4
1.2
M0.1 AB
2.5
max
0.2
MBC845
M
AB
Fig.21 SOT143.
handbook, full pagewidth
Dimensions in mm.
0.40
0.25
10
max
3.0
0.150
0.090
30
max
o
0.1
max
10
max
o
0.48
0.38
o
1.1
max
2.8
1.9
34
2
1
0.88
0.78
1.7
M0.1 B
TOP VIEW
B
A
1.4
1.2
MBC844
2.5
max
0.2
A
M
Fig.22 SOT143R.
1995 Apr 25 11
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 Apr 25 12
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