Philips BF901R, BF901 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BF901; BF901R
Silicon n-channel dual gate
MOS-FETs
Product specification
File under Discrete Semiconductors, SC07
November 1992
Philips Semiconductors Product specification
Silicon n-channel dual gate MOS-FETs BF901; BF901R
FEATURES
• Intended for low voltage operation
• Short channel transistor with high
ratio Yfs :C
is
• Low noise gain-controlled amplifier
to 1 GHz
• BF901R has reverse pinning.
DESCRIPTION
Enhancement type field-effect
transistors in plastic microminiature
SOT143 and SOT143R envelopes,
with source and substrate
interconnected. They are intended for
UHF and VHF applications, such as
television tuners and professional
communications equipment
especially suited for low voltage
operation. These MOS-FET tetrodes
are protected against excessive input
voltage surges by integrated
back-to-back diodes between gates
and source.
PINNING
PIN DESCRIPTION
1 source
2 drain
3 gate 2
4 gate 1
QUICK REFERENCE DATA
SYMBOL PARAMETER TYP. MAX. UNIT
V
DS
I
D
P
tot
T
j
Y
transfer admittance 28 35 mS
fs
C
ig1-s
C
rs
drain-source voltage − 12 V
drain current − 30 mA
total power dissipation − 200 mW
junction temperature − 150 °C
input capacitance at gate 1 2.35 2.75 pF
feedback capacitance 25 − fF
F noise figure at 800 MHz 1.7 − dB
handbook, halfpage
Top view
Marking code: MO1.
43
21
MAM039
g
2
g
1
d
s,b
Fig.1 Simplified outline (SOT143) and symbol.
handbook, halfpage
Top view
Marking code: MO2.
Fig.2 Simplified outline (SOT143R) and symbol.
November 1992 2
34
12
g
2
g
1
MAM040
d
s,b
Philips Semiconductors Product specification
Silicon n-channel dual gate MOS-FETs BF901; BF901R
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
D-G2
I
D
±I
G1-S
±I
G2-S
P
tot
T
stg
T
j
drain-source voltage − 12 V
drain-gate 2 voltage − 6V
DC drain current − 30 mA
gate 1-source current − 10 mA
gate 2-source current − 10 mA
total power dissipation
BF901 up to T
BF901R up to T
= 50 °C (note 1) − 200 mW
amb
= 40 °C (note 1) − 200 mW
amb
storage temperature −65 150 °C
junction temperature − 150 °C
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-a
thermal resistance from junction to ambient (note 1)
BF901 500 K/W
BF901R 550 K/W
Note
1. Device mounted on an FR4 printboard.
240
handbook, halfpage
P
tot
(mW)
120
BF901R BF901
MBB756
0
0 50 100 200
150
T (°C)
amb
Fig.3 Power derating curve.
November 1992 3
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