Philips BF870 DATA SHEET
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D067
BF870; BF872
PNP high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors Product specification
PNP high-voltage transistors BF870; BF872
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in class-B video output stages of colour
television receivers.
2
DESCRIPTION
PNP transistors in a TO-202 plastic package.
NPN complements: BF869 and BF871.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to mounting base
3 base
123
Fig.1 Simplified outline (TO-202) and symbol.
3
1
MBH792
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF870 −−250 V
BF872 −−300 V
V
CEO
collector-emitter voltage open base
BF870 −−250 V
BF872 −−300 V
I
CM
P
tot
h
FE
C
re
f
T
peak collector current −−100 mA
total power dissipation Tmb≤ 25 °C − 5W
DC current gain IC= −25 mA; VCE= −20 V; Tj=25°C50 −
feedback capacitance IC=ic= 0; VCE= −30 V; f = 1MHz − 2.2 pF
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 60 − MHz
1996 Dec 09 2
Philips Semiconductors Product specification
PNP high-voltage transistors BF870; BF872
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BF870 −−250 V
BF872 −−300 V
collector-emitter voltage open base
BF870 −−250 V
BF872 −−300 V
emitter-base voltage open collector −−5V
collector current (DC) −−50 nA
peak collector current −−100 mA
peak base current −−50 mA
total power dissipation T
≤ 25 °C − 1.6 W
amb
≤ 25 °C − 5W
T
mb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
R
th j-a
th j-mb
thermal resistance from junction to ambient 78 K/W
thermal resistance from junction to mounting base 25 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
C
f
T
CEsat
re
collector cut-off current IE= 0; VCB= −200 V −−10 nA
= 0; VCB= −200 V; Tj= 150 °C −−10 µA
I
E
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −25 mA; VCE= −20 V 50 −
collector-emitter saturation voltage IC= −30 mA; IB= −5mA −−600 mV
feedback capacitance IC=ic= 0; VCE= −30 V; f = 1MHz − 2.2 pF
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 60 − MHz
1996 Dec 09 3
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