DISCRETE SEMICONDUCTORS
DATA SH EET
M3D067
BF857; BF858; BF859
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors Product specification
NPN high-voltage transistors BF857; BF858; BF859
DESCRIPTION
NPN transistors in a TO-202 plastic package.
handbook, halfpage
An A-version with e-b-c pinning instead of e-c-b is
available on request.
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to mounting base
123
MBH794
3 base
Fig.1 Simplified outline (TO-202) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF857 − 160 V
BF858 − 250 V
BF859 − 300 V
V
CEO
collector-emitter voltage open base
BF857 − 160 V
BF858 − 250 V
BF859 − 300 V
I
CM
P
tot
h
FE
C
re
f
T
peak collector current − 300 mA
total power dissipation Tmb≤ 75 °C − 6W
DC current gain IC= 30 mA; VCE=10V 26 −
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 3pF
transition frequency IC= 15 mA; VCE= 10 V; f = 100 MHz 90 − MHz
1996 Dec 09 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF857; BF858; BF859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BF857 − 160 V
BF858 − 250 V
BF859 − 300 V
collector-emitter voltage open base
BF857 − 160 V
BF858 − 250 V
BF859 − 300 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 2W
amb
≤ 75 °C − 6W
T
mb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
R
th j-a
th j-mb
thermal resistance from junction to ambient 62.5 K/W
thermal resistance from junction to mounting base 12.5 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB= 100 V
BF857 − 0.1 µA
I
CBO
collector cut-off current IE= 0; VCB= 200 V
BF858 − 0.1 µA
I
CBO
collector cut-off current IE= 0; VCB= 250 V
BF859 − 0.1 µA
I
EBO
h
FE
V
CEsat
C
re
f
T
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain IC= 30 mA; VCE=10V 26 −
collector-emitter saturation voltage IC= 30 mA; IB= 6 mA − 1V
feedback capacitance IC=ic= 0; VCE=30V; f=1MHz − 3pF
transition frequency IC= 15 mA; VCE= 10 V; f = 100 MHz 90 − MHz
1996 Dec 09 3
Philips Semiconductors Product specification
NPN high-voltage transistors BF857; BF858; BF859
PACKAGE OUTLINE
handbook, full pagewidth
2.5 max
(1)
123
10.4 max
3.8
3.6
2.542.54
3.8
2.4 max
0.8
(3x)
0.6
4.6
max
24.2
max
0.56 max
0.65 max
1.6
8.6
max
12.2
min
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
10
Fig.2 TO-202.
MGA322
1996 Dec 09 4
Philips Semiconductors Product specification
NPN high-voltage transistors BF857; BF858; BF859
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 09 5
Philips Semiconductors Product specification
NPN high-voltage transistors BF857; BF858; BF859
NOTES
1996 Dec 09 6
Philips Semiconductors Product specification
NPN high-voltage transistors BF857; BF858; BF859
NOTES
1996 Dec 09 7
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© Philips Electronics N.V. 1996 SCA52
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Printed in The Netherlands 117041/00/02/pp8 Date of release: 1996 Dec 09 Document order number: 9397 75001572
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