Philips BF857, BF858 DATA SHEET
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D067
BF857; BF858; BF859
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors Product specification
NPN high-voltage transistors BF857; BF858; BF859
DESCRIPTION
NPN transistors in a TO-202 plastic package.
handbook, halfpage
An A-version with e-b-c pinning instead of e-c-b is
available on request.
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to mounting base
123
MBH794
3 base
Fig.1 Simplified outline (TO-202) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF857 − 160 V
BF858 − 250 V
BF859 − 300 V
V
CEO
collector-emitter voltage open base
BF857 − 160 V
BF858 − 250 V
BF859 − 300 V
I
CM
P
tot
h
FE
C
re
f
T
peak collector current − 300 mA
total power dissipation Tmb≤ 75 °C − 6W
DC current gain IC= 30 mA; VCE=10V 26 −
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 3pF
transition frequency IC= 15 mA; VCE= 10 V; f = 100 MHz 90 − MHz
1996 Dec 09 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF857; BF858; BF859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BF857 − 160 V
BF858 − 250 V
BF859 − 300 V
collector-emitter voltage open base
BF857 − 160 V
BF858 − 250 V
BF859 − 300 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 2W
amb
≤ 75 °C − 6W
T
mb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
R
th j-a
th j-mb
thermal resistance from junction to ambient 62.5 K/W
thermal resistance from junction to mounting base 12.5 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB= 100 V
BF857 − 0.1 µA
I
CBO
collector cut-off current IE= 0; VCB= 200 V
BF858 − 0.1 µA
I
CBO
collector cut-off current IE= 0; VCB= 250 V
BF859 − 0.1 µA
I
EBO
h
FE
V
CEsat
C
re
f
T
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain IC= 30 mA; VCE=10V 26 −
collector-emitter saturation voltage IC= 30 mA; IB= 6 mA − 1V
feedback capacitance IC=ic= 0; VCE=30V; f=1MHz − 3pF
transition frequency IC= 15 mA; VCE= 10 V; f = 100 MHz 90 − MHz
1996 Dec 09 3
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